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    COMBUSTIBLE GAS SENSOR
    3.
    发明申请
    COMBUSTIBLE GAS SENSOR 审中-公开
    可燃气体传感器

    公开(公告)号：US20100221148A1

    公开(公告)日：2010-09-02

    申请号：US12593389

    申请日：2008-03-19

    申请人： Tsutomu Oie ,  Kazutaka Okamoto ,  Yoshiaki Nakata ,  Yutaka Yamagishi ,  Shuji Takamatsu

    发明人： Tsutomu Oie ,  Kazutaka Okamoto ,  Yoshiaki Nakata ,  Yutaka Yamagishi ,  Shuji Takamatsu

    IPC分类号： G01N31/12

    CPC分类号： G01N27/16

    摘要： The present invention provides a combustible gas sensor that can realize a considerable improvement in the measurement sensitivity and the measurement precision by increasing the contact area between the measurement object gas and the oxidation catalyst particles, increasing the amount of heat generation of oxidation reaction in accordance therewith, and improving the transference of the oxidation reaction heat, while reducing the scale of the whole.In this invention, a temperature measurement element such as a thermopile obtained by joining different kinds of metals is formed on a top surface of a Si substrate; a porous catalyst layer made by allowing a porous material layer to carry oxidation catalyst particles such as Pt or a chain-form catalyst layer made by linking and bonding numerous oxidation catalyst particles in a chain form is provided on a heat-sensitive part of this temperature measurement element; and this porous catalyst layer or the chain-form catalyst layer is integrally bonded with the heat-sensitive part of this temperature measurement element.

    摘要翻译： 本发明提供一种可燃气体传感器，其可以通过增加测量对象气体和氧化催化剂颗粒之间的接触面积来提高测量灵敏度和测量精度的显着提高，从而增加氧化反应的发热量 ，并改善氧化反应热的转移，同时降低整体的规模。 在本发明中，在Si衬底的顶表面上形成诸如通过接合不同种类的金属获得的热电堆的温度测量元件; 通过使多孔材料层承载氧化催化剂颗粒如Pt或链形催化剂层制成的多孔催化剂层，其通过将多个氧化催化剂颗粒以链形式连接和结合而制备，在该温度的热敏部分 测量元件; 并且该多孔催化剂层或链状催化剂层与该温度测量元件的热敏部分一体地结合。

    Optical semiconductor device and method for fabricating the same
    4.
    发明申请
    Optical semiconductor device and method for fabricating the same 有权
    光半导体装置及其制造方法

    公开(公告)号：US20050045868A1

    公开(公告)日：2005-03-03

    申请号：US10857920

    申请日：2004-06-02

    申请人： Koji Otsubo ,  Yoshiaki Nakata

    发明人： Koji Otsubo ,  Yoshiaki Nakata

    IPC分类号： H01L21/205 ,  H01L29/06 ,  H01L33/06 ,  H01L33/30 ,  H01L33/40 ,  H01S5/028 ,  H01S5/062 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343

    CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3412 ,  H01S5/34313 ,  H01S5/34366

    摘要： The optical semiconductor device comprises an active layer including a plurality of quantum dot stacks 18, 22, 26 each of which is formed of a plurality of quantum dot layers 14 and a plurality of first layers 16 alternately stacked, and a plurality of second barrier layers 20, 24 thicker than the first barrier layers 16 stacked alternately with the quantum dot stacks 18, 22, 26. Thus, the quantum dot layers can be stacked with the generation of dislocations due to lattice mismatching between the substrate and the quantum dots suppressed. A number of quantum dot layers can be stacked with a desired light confinement coefficient ensured. The optical semiconductor device can have the characteristics easily improved.

    摘要翻译： 光学半导体器件包括有源层，其包括多个量子点堆叠18,22,26，每个量子点堆叠18,22,26由交替层叠的多个量子点层14和多个第一层16形成，并且多个第二阻挡层 20,24比与量子点堆叠18,22,26交替堆叠的第一阻挡层16厚。因此，量子点层可以由于衬底和量子点被抑制之间的晶格失配而产生位错而堆叠。 可以堆叠多个量子点层，确保所需的光限制系数。 光学半导体器件可以具有容易改善的特性。

    Quantum semiconductor memory device including quantum dots
    6.
    发明授权
    Quantum semiconductor memory device including quantum dots 失效
    量子半导体存储器件包括量子点

    公开(公告)号：US06281519B1

    公开(公告)日：2001-08-28

    申请号：US09273526

    申请日：1999-03-22

    申请人： Yoshihiro Sugiyama ,  Yoshiaki Nakata

    发明人： Yoshihiro Sugiyama ,  Yoshiaki Nakata

    IPC分类号： H01L2906

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G11B7/00453 ,  G11B7/00455 ,  G11B7/0052 ,  G11B7/24 ,  G11B7/26 ,  G11C7/005 ,  G11C11/34 ,  G11C2216/08 ,  H01L29/127

    摘要： A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accumulation layer formed adjacent to the self-organized quantum dots, and wherein the self-organized quantum dots are formed of a semiconductor crystal having a composition set such that quantum levels of the self-organized quantum dots are located higher than a conduction band of the accumulation layer.

    摘要翻译： 量子半导体存储器件包括形成在衬底上的量子结构，其中量子结构包括相对于衬底形成应变异质外延系统的多个自组织量子点和与自组织量子点相邻形成的累积层 并且其中所述自组织量子点由半导体晶体形成，所述半导体晶体具有使得所述自组织量子点的量子水平位于比所述累积层的导带高的组成。

    KNIFE HOLDER FOR UNDERWATER CUTTING PELLETIZING DEVICE
    8.
    发明申请
    KNIFE HOLDER FOR UNDERWATER CUTTING PELLETIZING DEVICE 审中-公开
    水下切割装置的刀具

    公开(公告)号：US20130042738A1

    公开(公告)日：2013-02-21

    申请号：US13695545

    申请日：2011-06-03

    申请人： Shin Iwasaki ,  Kazuo Iritani ,  Yoshiaki Nakata

    发明人： Shin Iwasaki ,  Kazuo Iritani ,  Yoshiaki Nakata

    IPC分类号： B29B9/06

    CPC分类号： B29B9/065 ,  B26D7/2614 ,  Y10T83/9396

    摘要： Provided is a knife holder (10) for use with an underwater cutting pelletizing device which includes a die plate (40) and the knife holder (10). The die plate (40) includes an annular projected portion (52) and a plurality of die holes (51) having an opening on the projected portion (52). The knife holder (10) holds a plurality of knives (30) which slide on the surface of the projected portion (52) to thereby cut melt resin, which has been pushed through each of the die holes (51), into resin pellets in cooling water. The knife holder (10) can reduce the deflection of the knife (30) and thereby the gap that appears between the sliding plane thereof and the die plate projected portion (52). The knife holder (10) includes a knife holder body (11) and a plurality of rib portions (12). The knife holder body (11) has an outer circumference end (11a) which is located inside the inner circumference end of the projected portion (52) of the die plate (40) in the radial direction. The rib portions (12) are provided at respective multiple positions that are arranged in the circumferential direction of the outer circumference end (11a); are projected radially outwardly from the outer circumference end (11a) to extend outwardly past the inner circumference end of the projected portion (52); and have a front face located above the die plate and have the knife (30) secured thereto with the back face of the knife (30) facing the front face.

    摘要翻译： 提供一种与包括模板（40）和刀架（10）的水下切割造粒装置一起使用的刀架（10）。 模板（40）包括环形突出部分（52）和在突出部分（52）上具有开口的多个模孔（51）。 刀保持器（10）保持在突出部（52）的表面上滑动的多个刀具（30），从而将已经被推入每个模孔（51）的熔融树脂切割成树脂粒子 冷却水。 刀架（10）可以减少刀（30）的偏转，从而减小出现在其滑动平面与模板突出部（52）之间的间隙。 刀保持器（10）包括刀架主体（11）和多个肋部（12）。 刀架主体（11）具有沿径向位于模板（40）的突出部（52）的内周端内侧的外周端（11a）。 所述肋部（12）设置在所述外周端（11a）的圆周方向上配置的多个位置上。 从外周端（11a）径向向外突出，以向外延伸穿过突出部分（52）的内周端; 并且具有位于模板上方的前表面，并且使刀（30）固定在其上，刀（30）的背面面向前表面。

    Optical semiconductor device and method for fabricating the same
    9.
    发明授权
    Optical semiconductor device and method for fabricating the same 有权
    光半导体装置及其制造方法

    公开(公告)号：US07595508B2

    公开(公告)日：2009-09-29

    申请号：US10857920

    申请日：2004-06-02

    申请人： Koji Otsubo ,  Yoshiaki Nakata

    发明人： Koji Otsubo ,  Yoshiaki Nakata

    IPC分类号： H01L33/00

    CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3412 ,  H01S5/34313 ,  H01S5/34366

    摘要： The optical semiconductor device comprises an active layer including a plurality of quantum dot stacks 18, 22, 26 each of which is formed of a plurality of quantum dot layers 14 and a plurality of first layers 16 alternately stacked, and a plurality of second barrier layers 20, 24 thicker than the first barrier layers 16 stacked alternately with the quantum dot stacks 18, 22, 26. Thus, the quantum dot layers can be stacked with the generation of dislocations due to lattice mismatching between the substrate and the quantum dots suppressed. A number of quantum dot layers can be stacked with a desired light confinement coefficient ensured. The optical semiconductor device can have the characteristics easily improved.

    摘要翻译： 光学半导体器件包括有源层，其包括多个量子点堆叠18,22,26，每个量子点堆叠18,22,26由交替层叠的多个量子点层14和多个第一层16形成，并且多个第二阻挡层 20,24比与量子点堆叠18,22,26交替堆叠的第一阻挡层16厚。因此，量子点层可以由于衬底和量子点被抑制之间的晶格失配而产生位错而堆叠。 可以堆叠多个量子点层，确保所需的光限制系数。 光学半导体器件可以具有容易改善的特性。

    Perfluoropolyether ester compound, lubricant and magnetic recording medium
    10.
    发明授权
    Perfluoropolyether ester compound, lubricant and magnetic recording medium 有权
    全氟聚醚酯化合物，润滑剂和磁记录介质

    公开(公告)号：US07157410B2

    公开(公告)日：2007-01-02

    申请号：US10518717

    申请日：2003-10-16

    申请人： Yoshiaki Nakata

    发明人： Yoshiaki Nakata

    IPC分类号： C07C69/66

    CPC分类号： G11B5/725 ,  C08G63/672 ,  C08G63/6826 ,  C10M107/38 ,  C10M2213/0606 ,  C10N2240/204

    摘要： A novel perfluoropolyether derivative, which has at least one ester bond and is useful as a lubricant with a decomposition temperature of 300° C. or more, is obtained by an esterification reaction between a perfluoropolyether diol having hydroxyl groups at both ends thereof and represented by the formula (1) and a perfluoropolyether dicarboxylic acid having carboxyl groups at both ends thereof and represented by the formula (2): HOCH2—R—CH2OH  (1) HOOC—R′—COOH  (2) wherein each of R and R′ is a perfluoroether group.

    摘要翻译： 具有至少一个酯键并且可用作分解温度为300℃以上的润滑剂的新型全氟聚醚衍生物是通过在其两端具有羟基的全氟聚醚二醇与由 式（1）和两末端具有羧基并由式（2）表示的全氟聚醚二羧酸：<？in-line-formula description =“In-line formula”end =“lead”？> HOCH < SUB> 2 -R-CH 2 OH（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？> HOOC-R'-COOH（2）<？in-line-formula description =“In-line Formulas”end =“tail”？> 的R和R'是全氟醚基团。