摘要:
A semiconductor device comprises: a first semiconductor chip having a first MIS transistor of a first conductivity type and a second semiconductor chip having a second MIS transistor of the first conductivity type. The first MIS transistor has a source electrode formed on a first face. The second MIS transistor has a drain electrode formed on a first face. The source electrode of the first semiconductor chip and the drain electrode of the second semiconductor chip are bonded opposite to each other.
摘要:
For evaporating a protective coating on a light emitting end surface 51a of a laser chip 51, there is formed first an Si film 52a, which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface 51a immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating 52b, if oxygen is generated due to decomposition of the evaporation material Al2O3, and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface 51a is prevented, thereby decreasing damages given to the end surface 51a in the process of protective coating creation. Further, the Si film 52a has a film thickness as small as approx. 20 Å. This controls generation of leakage current in the Si film 52a (or the end surface 51a), and prevents negative influence on oscillation characteristics.
摘要翻译:为了蒸发激光芯片51的发光端面51a上的保护涂层,首先形成由于分解而不产生氧的Si膜52a。 因此,在氧分压低的条件下,在蒸发处理开始后立即在发光端面51a附近形成涂层。 同时,在保护涂层52b的后期蒸发过程中,如果由于蒸发材料Al 2 O 3的分解而产生氧,并且氧分压增加,则防止了氧与端面51a的碰撞或结合, 从而在保护涂层的制造过程中减少对端面51a的损伤。 此外,Si膜52a的膜厚度约为 20Å。 这可以控制Si膜52a(或端面51a)中的漏电流的产生,并且防止对振荡特性的负面影响。
摘要:
An antenna structure for vehicles capable of minimizing the distance between a first contact member and a signal processing circuit and ensuring stable antenna performance without using a connection line of a lengthy wire rod is provided. To realize this advantage, an antenna element is disposed on a rear window glass, and the first contact member is disposed at an end of the antenna element. Further, an amplifier case having an attachment flange facing the rear window glass is fixed to a roof panel, and the signal processing circuit is disposed in the amplifier case at a position sandwiching the attachment flange.
摘要:
A torque fluctuation absorber includes a first rotating member arranged to be rotatable, a second rotating member arranged in a rotatable manner relative to the first rotating member, a coil spring for buffering a torsion between the first rotating member and the second rotating member by means of an elastic force, and a cushion member arranged at an inside of the coil spring and buffering the torsion between the first rotating member and the second rotating member by means of an elastic force, wherein the cushion member includes an elastic member formed in a columnar shape, and an abrasion resistant member partly covering a side surface of the elastic member and including a greater abrasion resistance than an abrasion resistance of the elastic member.
摘要:
A torque fluctuation absorber includes a first rotating member arranged to be rotatable, a second rotating member arranged in a rotatable manner relative to the first rotating member, a coil spring for buffering a torsion between the first rotating member and the second rotating member by means of an elastic force, and a cushion member arranged at an inside of the coil spring and buffering the torsion between the first rotating member and the second rotating member by means of an elastic force, wherein the cushion member includes an elastic member formed in a columnar shape, and an abrasion resistant member partly covering a side surface of the elastic member and including a greater abrasion resistance than an abrasion resistance of the elastic member.
摘要:
The present invention relates to a semiconductor laser device having a protective coating with a high-reliability formed on an end surface, and to a method for manufacturing the same. According to the present invention, in forming a semiconductor laser device, an electrode comprising Au is patterned so that the electrode does not exist in the vicinity of a light emitting end surface. Thereby, even when an Si film is formed on the light emitting end surface, the Si film is prevented from contacting with the light emitting end surface. In addition, after patterning the electrode, an insulating film (a silicon nitride film) is formed on the electrode for preventing the Si in the protective coating on the end surface from contacting with Au in the electrode, even when the Si film contacts with a surface of the electrode.
摘要:
A collecting portion for an exhaust manifold branch where a combined pipe portion including a plurality of pipes is welded to a collecting pipe wherein, (1) an intermediate member is provided between the combined pipe portion and the collecting pipe, (2) the collecting pipe has a portion that extends upstream, (3) a weld line formed at the downstream end of a partitioning wall is axially zigzagged, (4) a weld line is offset from the downstream surface of the combined pipe portion, (5) only one of the partitioning walls is curved, (6) downstream ends of the partitioning walls are smoothly convex, (7) an additional weld is formed in the partitioning wall, or (8) an intermediate member is welded at a half circumference of the combined pipe portion.