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    Semiconductor acceleration sensor with source and drain regions
    1.
    发明授权
    Semiconductor acceleration sensor with source and drain regions 失效
    具有源极和漏极区域的半导体加速度传感器

    公开(公告)号：US5627397A

    公开(公告)日：1997-05-06

    申请号：US402949

    申请日：1995-03-13

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    IPC分类号： G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/124 ,  G01P1/006 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

    摘要翻译： 根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。 在该检测中使用两个晶体管结构。 一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。 此时，另一晶体管结构中的固定电极之间的电流降低。 这两个晶体管结构靠近地设置。 通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

    Semiconductor sensor method
    2.
    发明授权
    Semiconductor sensor method 失效
    半导体传感器方法

    公开(公告)号：US5587343A

    公开(公告)日：1996-12-24

    申请号：US401044

    申请日：1995-03-08

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

    IPC分类号： G01L1/18 ,  G01L1/22 ,  G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

    CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0828

    摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.

    摘要翻译： 一种制造半导体传感器的方法，其中公开了可移动部件的偏转。 在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。 此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。 通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。 通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。 进行通过光刻法的干蚀刻等的图案化，形成可动部件。 然后蚀刻可动件下方的氧化硅膜。

    Semiconductor acceleration sensor with beam structure
    4.
    发明授权
    Semiconductor acceleration sensor with beam structure 失效
    具有梁结构的半导体加速度传感器

    公开(公告)号：US5619050A

    公开(公告)日：1997-04-08

    申请号：US399345

    申请日：1995-03-06

    申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

    发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/12 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.

    摘要翻译： 公开了能够减小漏电流的半导体加速度传感器及其制造方法。 梁结构设置在硅衬底上。 梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。 可动电极部分形成在可动部分的一部分中。 在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。 在硅衬底中形成外围电路。 光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。 然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。 在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。

    Method for fabricating a semiconductor acceleration sensor
    5.
    发明授权
    Method for fabricating a semiconductor acceleration sensor 失效
    半导体加速度传感器的制造方法

    公开(公告)号：US5851851A

    公开(公告)日：1998-12-22

    申请号：US399342

    申请日：1995-03-06

    申请人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

    发明人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/78

    CPC分类号： G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

    摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.

    摘要翻译： 本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。 在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。 将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。 可动构件由该聚酰亚胺膜支撑。 因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。 此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。 此后，将硅衬底浸入软化水​​中以用软化水代替蚀刻液，随后将硅衬底干燥。 因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    9.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Method for fabrication of a semiconductor sensor
    10.
    发明授权
    Method for fabrication of a semiconductor sensor 失效
    半导体传感器的制造方法

    公开(公告)号：US6143584A

    公开(公告)日：2000-11-07

    申请号：US121893

    申请日：1998-07-24

    申请人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

    发明人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

    IPC分类号： G01P15/12 ,  H01L21/00

    CPC分类号： G01P15/123 ,  G01P15/124

    摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

    摘要翻译： 半导体传感器具有量规电阻。 量规电阻器通过接触孔与铝电极连接，形成桥接电路。 在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。 然后，测量电阻的电阻或桥接电路的输出。 基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。