公开(公告)号：US20050280037A1

公开(公告)日：2005-12-22

申请号：US11196680

申请日：2005-08-04

申请人： Mutsumi Kimura ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

发明人： Mutsumi Kimura ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

IPC分类号： H05B33/06 ,  G09F9/30 ,  H01L21/60 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/32 ,  H01L51/50 ,  H01L27/10

CPC分类号： H01L24/81 ,  H01L24/73 ,  H01L24/75 ,  H01L27/3255 ,  H01L2221/68322 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75263 ,  H01L2224/7598 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.

摘要翻译： 在通过在第一基板上形成功能元件而制造的半导体器件中，将元件芯片转移到第二基板上，并且将元件芯片上的第一焊盘连接到第二基板上的第二焊盘，第一基板的面积或宽度增加。 即使在分离和转移过程中发生不对准，第一焊盘也可以牢固地连接到第二焊盘。 仅在第二基板侧的元件芯片的表面上形成第一焊盘。 功能元件形成为比第一焊盘离第二衬底更远。 或者，只有第一焊盘形成在远离第二衬底的元件芯片的表面上，并且功能元件形成为比第一焊盘更靠近第二衬底。 或者，第一焊盘形成在第二衬底侧的元件芯片的表面和远离第二衬底的元件芯片的表面上。

公开(公告)号：US07101729B2

公开(公告)日：2006-09-05

申请号：US10392191

申请日：2003-03-20

申请人： Mutsumi Kimura ,  Satoshi Inoue ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

发明人： Mutsumi Kimura ,  Satoshi Inoue ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

IPC分类号： H01L21/44

CPC分类号： H01L27/1259 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/3255 ,  H01L27/3293 ,  H01L51/56 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2227/326 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.

摘要翻译： 本发明旨在制造具有薄膜电路的基板间转录技术的大尺寸半导体器件。 通过将多个第二基板（21）布置成瓦片形状来实现扩大。 作为第二基板（21），采用具有双面布线或多层布线的印刷基板或柔性印刷电路。 多个第二基板（21）被独立地驱动，并且使多个第二基板（21）相互重叠，并且驱动电路（23）设置在这样的重叠部分。 此外，使多个第二基板（21）相互重叠，并且相互电路在这样的重叠部分处连接。

公开(公告)号：US07341894B2

公开(公告)日：2008-03-11

申请号：US11196680

申请日：2005-08-04

申请人： Mitsumi Kimura ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

发明人： Mitsumi Kimura ,  Sumio Utsunomiya ,  Hiroyuki Hara ,  Wakao Miyazawa

IPC分类号： H01L29/04

CPC分类号： H01L24/81 ,  H01L24/73 ,  H01L24/75 ,  H01L27/3255 ,  H01L2221/68322 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75263 ,  H01L2224/7598 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.

摘要翻译： 在通过在第一基板上形成功能元件而制造的半导体器件中，将元件芯片转移到第二基板上，并且将元件芯片上的第一焊盘连接到第二基板上的第二焊盘，第一基板的面积或宽度增加。 即使在分离和转移过程中发生不对准，第一焊盘也可以牢固地连接到第二焊盘。 仅在第二基板侧的元件芯片的表面上形成第一焊盘。 功能元件形成为比第一焊盘离第二衬底更远。 或者，只有第一焊盘形成在远离第二衬底的元件芯片的表面上，并且功能元件形成为比第一焊盘更靠近第二衬底。 或者，第一焊盘形成在第二衬底侧的元件芯片的表面和远离第二衬底的元件芯片的表面上。

公开(公告)号：US07781964B2

公开(公告)日：2010-08-24

申请号：US11684944

申请日：2007-03-12

申请人： Hiroyuki Hara ,  Sumio Utsunomiya ,  Daisuke Abe ,  Masayoshi Todorokihara ,  Kazuyuki Miyashita

发明人： Hiroyuki Hara ,  Sumio Utsunomiya ,  Daisuke Abe ,  Masayoshi Todorokihara ,  Kazuyuki Miyashita

IPC分类号： H01J1/62

CPC分类号： H01L27/3244 ,  H01L27/3265 ,  H01L27/3276

摘要： An organic electroluminescent device includes a substrate that is conductive at least on a first surface; a first insulating film located on the first surface of the substrate and including a portion of a first opening, a portion of a second opening, and a portion of a third opening; a semiconductor film located on the first insulating film and receiving a current from the first surface of the substrate via the portion of a first opening; a second insulating film located on the semiconductor film and in contact with the substrate via the portion of a second opening; a capacitance electrode located on the second insulating film; a gate electrode located on the second insulating film and overlapping the semiconductor film; an intermediate insulating film located on the gate electrode and capacitance electrode; a pixel electrode located on the intermediate insulating film and receiving a current via the semiconductor film; a light-emitting layer located on the pixel electrode; a common electrode located on the light-emitting layer; and a power supply section located on the first insulating film and supplying a current to the first surface of the substrate via the portion of a third opening. The second insulating film is interposed between the capacitance electrode and the substrate via the portion of a second opening.

摘要翻译： 有机电致发光器件包括至少在第一表面上导电的衬底; 第一绝缘膜，位于基板的第一表面上，并且包括第一开口的一部分，第二开口的一部分和第三开口的一部分; 半导体膜，位于所述第一绝缘膜上，并且经由所述第一开口的所述部分从所述基板的所述第一表面接收电流; 位于所述半导体膜上并经由所述第二开口部分与所述基板接触的第二绝缘膜; 位于所述第二绝缘膜上的电容电极; 位于所述第二绝缘膜上且与所述半导体膜重叠的栅电极; 位于栅电极和电容电极上的中间绝缘膜; 位于中间绝缘膜上并经由半导体膜接收电流的像素电极; 位于像素电极上的发光层; 位于发光层上的公共电极; 以及电源部，其位于所述第一绝缘膜上，并且经由所述第三开口的所述部分向所述基板的所述第一表面供给电流。 第二绝缘膜通过第二开口的一部分介于电容电极和基板之间。

公开(公告)号：US07935585B2

公开(公告)日：2011-05-03

申请号：US11905961

申请日：2007-10-05

申请人： Mitsuru Sato ,  Sumio Utsunomiya

发明人： Mitsuru Sato ,  Sumio Utsunomiya

IPC分类号： H01L21/84

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/66757

摘要： A method for fabricating a semiconductor device, comprising: forming a semiconductor film on a substrate; and recrystallizing the semiconductor film using as a heat source flame of a gas burner that uses hydrogen and oxygen gas mixture as a fuel.

摘要翻译： 一种制造半导体器件的方法，包括：在衬底上形成半导体膜; 并且使用使用氢气和氧气混合物作为燃料的气体燃烧器的热源火焰来重结晶半导体膜。

公开(公告)号：US07843041B2

公开(公告)日：2010-11-30

申请号：US11625978

申请日：2007-01-23

申请人： Taimei Kodaira ,  Sumio Utsunomiya

发明人： Taimei Kodaira ,  Sumio Utsunomiya

IPC分类号： H01L29/06 ,  H01L23/58

CPC分类号： H01L27/1266 ,  H01L27/1248 ,  H01L29/78603 ,  Y10S438/978

摘要： A thin-film circuit device includes a substrate and a thin-film circuit layer, disposed on the substrate, having an element region and a low-strength region. The element region includes thin-film elements. The low-strength region extends between an end portion of the thin-film circuit layer and the element region and has a mechanical strength less than that of the surroundings of the low-strength region.

摘要翻译： 薄膜电路器件包括设置在衬底上的具有元件区域和低强度区域的衬底和薄膜电路层。 元件区域包括薄膜元件。 低强度区域在薄膜电路层的端部与元件区域之间延伸，并且其机械强度小于低强度区域的周围的机械强度。

公开(公告)号：US20100214266A1

公开(公告)日：2010-08-26

申请号：US12773262

申请日：2010-05-04

申请人： Takeshi Koshihara ,  Sumio Utsunomiya ,  Takeyoshi Ushiki ,  Yoichi Fujikawa

发明人： Takeshi Koshihara ,  Sumio Utsunomiya ,  Takeyoshi Ushiki ,  Yoichi Fujikawa

IPC分类号： G06F3/045

CPC分类号： G06F3/044 ,  H01L27/323 ,  H01L27/3244

摘要： The invention provides an organic electroluminescence device having an input function, including: an element substrate that has a light-emitting layer sandwiched between a pair of electrodes; a sealing substrate that seals the element substrate; a first detection electrode that is provided at the inner-surface side of the sealing substrate; a second detection electrode that is provided at the outer-surface side of the sealing substrate; the second detection electrode having a detection axis that is not the same as that of the first detection electrode; a dielectric film that is formed on the second detection electrode; and a detection unit that detects a position at which electrostatic capacitance is generated via the dielectric film between the first detection electrode and the second detection electrode.

摘要翻译： 本发明提供一种具有输入功能的有机电致发光器件，包括：具有夹在一对电极之间的发光层的元件衬底; 密封基板，密封元件基板; 第一检测电极，设置在密封基板的内表面侧; 设置在密封基板的外表面侧的第二检测电极; 所述第二检测电极具有与所述第一检测电极不同的检测轴; 形成在所述第二检测电极上的电介质膜; 以及检测单元，其经由第一检测电极和第二检测电极之间的电介质膜检测产生静电电容的位置。

公开(公告)号：US20070173031A1

公开(公告)日：2007-07-26

申请号：US11625978

申请日：2007-01-23

申请人： Taimei Kodaira ,  Sumio Utsunomiya

发明人： Taimei Kodaira ,  Sumio Utsunomiya

IPC分类号： H01L21/76

CPC分类号： H01L27/1266 ,  H01L27/1248 ,  H01L29/78603 ,  Y10S438/978

摘要： A thin-film circuit device includes a substrate and a thin-film circuit layer, disposed on the substrate, having an element region and a low-strength region. The element region includes thin-film elements. The low-strength region extends between an end portion of the thin-film circuit layer and the element region and has a mechanical strength less than that of the surroundings of the low-strength region.

摘要翻译： 薄膜电路器件包括设置在衬底上的具有元件区域和低强度区域的衬底和薄膜电路层。 元件区域包括薄膜元件。 低强度区域在薄膜电路层的端部与元件区域之间延伸，并且其机械强度小于低强度区域的周围的机械强度。

公开(公告)号：US20050006647A1

公开(公告)日：2005-01-13

申请号：US10850405

申请日：2004-05-21

申请人： Sumio Utsunomiya

发明人： Sumio Utsunomiya

IPC分类号： G02F1/1345 ,  G02F1/136 ,  G09F9/30 ,  H01L21/02 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/52 ,  H01L27/00 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L2221/68363 ,  H01L2224/32145 ,  H01L2224/83001

摘要： To provide a thin film circuit device in which a three-dimensional circuit structure is realized, a thin film circuit device is formed of a first thin film circuit layer and a second thin film circuit layer laminated to each other. The first thin film circuit layer contains a first thin film circuit provided between an underlayer and a protective layer and a lower connection electrode connected to the first thin film circuit and exposed at a part of the bottom surface of the underlayer. The second thin film circuit layer contains a second thin film circuit provided between an underlayer and a protective layer, an upper connection electrode connected to the second thin film circuit and exposed at a part of the top surface of the protective layer, and a lower connection electrode connected to the second thin film circuit and exposed at a part of the bottom surface of the underlayer. The first and the second thin film circuits are bonded to each other so that the lower connection electrode of the first thin film circuit layer is electrically connected to the upper electrode of the second thin film circuit layer.

摘要翻译： 为了提供其中实现三维电路结构的薄膜电路器件，薄膜电路器件由彼此层叠的第一薄膜电路层和第二薄膜电路层形成。 第一薄膜电路层包括设置在底层和保护层之间的第一薄膜电路和连接到第一薄膜电路的下连接电极，并在底层的底表面的一部分处露出。 第二薄膜电路层包括设置在下层和保护层之间的第二薄膜电路，连接到第二薄膜电路并暴露在保护层的顶表面的一部分的上连接电极，以及下连接 电极连接到第二薄膜电路并暴露在底层的底表面的一部分处。 第一和第二薄膜电路彼此接合，使得第一薄膜电路层的下连接电极电连接到第二薄膜电路层的上电极。

公开(公告)号：US08034175B2

公开(公告)日：2011-10-11

申请号：US11389079

申请日：2006-03-27

申请人： Sumio Utsunomiya ,  Mitsuru Sato

发明人： Sumio Utsunomiya ,  Mitsuru Sato

IPC分类号： C23C16/00

CPC分类号： H01L21/02667 ,  F27B17/0025 ,  H01L21/2022 ,  H01L21/67103 ,  H01L27/1214 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.

摘要翻译： 一种制造半导体器件的方法，包括通过使用由氢氧混合气体燃烧的气体燃烧器的火焰作为热源，将沉积在基板上的半导体层提供热处理。