公开(公告)号：US20240113092A1

公开(公告)日：2024-04-04

申请号：US18483406

申请日：2023-10-09

申请人： NANOSYS, INC.

发明人： Willibrordus Gerardus Maria VAN DEN HOEK ,  Tsun Yin LAU ,  Cameron DANESH ,  Fariba DANESH

IPC分类号： H01L25/16 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/56 ,  H01L33/62

CPC分类号： H01L25/167 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/405 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/005 ,  H01L2933/0066

摘要： A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

公开(公告)号：US20220384404A1

公开(公告)日：2022-12-01

申请号：US17818822

申请日：2022-08-10

申请人： NANOSYS, INC.

发明人： Willibrordus Gerardus Maria VAN DEN HOEK ,  Tsun Yin LAU ,  Cameron DANESH ,  Fariba DANESH

IPC分类号： H01L25/16 ,  H01L33/40 ,  H01L33/62 ,  H01L33/56 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/24 ,  H01L33/08 ,  H01L33/00

摘要： A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

公开(公告)号：US20230387350A1

公开(公告)日：2023-11-30

申请号：US18187516

申请日：2023-03-21

申请人： NANOSYS, INC.

发明人： Fariba DANESH ,  Richard P. SCHNEIDER ,  Fan REN ,  Michael JANSEN ,  Nathan GARDNER

IPC分类号： H01L33/32 ,  H01L25/00 ,  H01L25/075 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06 ,  H01L33/24 ,  H01L33/60 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L25/50 ,  H01L25/0753 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06 ,  H01L33/24 ,  H01L33/60 ,  H01L33/0095 ,  H01L2224/16225 ,  H01L2224/95

摘要： A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.