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19 条记录 (耗时 0.02 秒)

    Vehicle headlamp
    1.
    发明授权
    Vehicle headlamp 有权
    车头灯

    公开(公告)号：US07350948B2

    公开(公告)日：2008-04-01

    申请号：US11646505

    申请日：2006-12-28

    申请人： Naohi Nino ,  Takayuki Iwaki ,  Tomoyuki Moritani ,  Akinori Matsumoto

    发明人： Naohi Nino ,  Takayuki Iwaki ,  Tomoyuki Moritani ,  Akinori Matsumoto

    IPC分类号： B60Q1/00

    CPC分类号： F21S41/43 ,  F21S41/162 ,  F21S41/255 ,  F21S41/338

    摘要： A vehicle headlamp includes a projection lens which is placed on an optical axis extending in a front and rear direction of a vehicle, a light source which is placed behind a rear focal point of the projection lens, a reflector which reflects light emanated directly from the light source in a forward direction and toward the optical axis, and a light-dark boundary forming plate which is placed between the projection lens and the light source. The light-dark boundary forming plate extends rearward and obliquely downward from a vicinity of the rear focal point of the projection lens, and a light-dark boundary forming portion is formed on a front end portion of the light-dark boundary forming plate. The light-dark boundary forming portion shields a part of the light reflected from the reflector and forms a cut-off line of a light distribution pattern.

    摘要翻译： 一种车辆用前照灯，其具备放置在沿车辆前后方向延伸的光轴上的投影透镜，位于投影透镜的后焦点后方的光源，反射从直线 光源沿向前方向并朝向光轴，以及位于投影透镜和光源之间的浅黑色边界形成板。 暗黑边界形成板从投影透镜的后焦点附近向后并且向下倾斜，并且在深黑色边界形成板的前端部上形成浅黑色边界形成部。 浅暗边界形成部分遮蔽从反射器反射的一部分光，并形成配光图案的截止线。

    Vehicle headlamp
    2.
    发明申请
    Vehicle headlamp 有权
    车头灯

    公开(公告)号：US20070147062A1

    公开(公告)日：2007-06-28

    申请号：US11646505

    申请日：2006-12-28

    申请人： Naohi Nino ,  Takayuki Iwaki ,  Tomoyuki Moritani ,  Akinori Matsumoto

    发明人： Naohi Nino ,  Takayuki Iwaki ,  Tomoyuki Moritani ,  Akinori Matsumoto

    IPC分类号： B60Q1/00

    CPC分类号： F21S41/43 ,  F21S41/162 ,  F21S41/255 ,  F21S41/338

    摘要： A vehicle headlamp includes a projection lens which is placed on an optical axis extending in a front and rear direction of a vehicle, a light source which is placed behind a rear focal point of the projection lens, a reflector which reflects light emanated directly from the light source in a forward direction and toward the optical axis, and a light-dark boundary forming plate which is placed between the projection lens and the light source. The light-dark boundary forming plate extends rearward and obliquely downward from a vicinity of the rear focal point of the projection lens, and a light-dark boundary forming portion is formed on a front end portion of the light-dark boundary forming plate. The light-dark boundary forming portion shields a part of the light reflected from the reflector and forms a cut-off line of a light distribution pattern.

    摘要翻译： 一种车辆用前照灯，其具备放置在沿车辆前后方向延伸的光轴上的投影透镜，位于投影透镜的后焦点后方的光源，反射从直线 光源沿向前方向并朝向光轴，以及位于投影透镜和光源之间的浅黑色边界形成板。 暗黑边界形成板从投影透镜的后焦点附近向后并且向下倾斜，并且在深黑色边界形成板的前端部上形成浅黑色边界形成部。 浅暗边界形成部分遮蔽从反射器反射的一部分光，并形成配光图案的截止线。

    Headlamp
    3.
    发明授权
    Headlamp 失效
    头灯

    公开(公告)号：US06695466B2

    公开(公告)日：2004-02-24

    申请号：US09975449

    申请日：2001-10-11

    申请人： Masahito Naganawa ,  Tomoyuki Moritani ,  Akinori Matsumoto ,  Takayuki Iwaki

    发明人： Masahito Naganawa ,  Tomoyuki Moritani ,  Akinori Matsumoto ,  Takayuki Iwaki

    IPC分类号： B60Q104

    CPC分类号： F21S41/692 ,  F21S41/43 ,  F21S41/657 ,  F21S41/675

    摘要： In a headlamp having a single filament bulb or discharge bulb, there is provided a movable shade that can appear from a reflection mirror located above the single filament bulb. In a usual condition, the movable shade is pulled at the back of the reflection mirror located above the single filament bulb. Then, a light emitted from the single filament bulb is condensed by the reflection mirror and irradiates a very long distance thereby to make a high-speed traveling possible. On the contrary, when it is rainy or foggy, the movable shade is protruded in the front of the reflection mirror. Then, a part of a light emitted from the single filament bulb is shielded by the movable shade, and the road surface in 20-40 m front of the vehicle is darkened thereby to reduce surface reflection from the road surface.

    摘要翻译： 在具有单丝灯泡或放电灯泡的头灯中，设置有可以从位于单丝灯泡上方的反射镜出现的可移动遮光罩。 在通常情况下，可动阴影在位于单丝灯泡上方的反射镜的背面被拉动。 然后，从单个灯丝灯发出的光被反射镜冷凝并照射非常长的距离，从而使高速行驶成为可能。 相反，当下雨或有雾时，可动阴影在反射镜的前面突出。 然后，由单个灯丝灯发出的光的一部分被可动阴影屏蔽，并且车辆前方20-40米处的路面变暗，从而减少路面的表面反射。

    Semiconductor device and method of manufacturing the same
    6.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20090134493A1

    公开(公告)日：2009-05-28

    申请号：US12289824

    申请日：2008-11-05

    申请人： Takayuki Iwaki

    发明人： Takayuki Iwaki

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L28/55

    摘要： Provided is a semiconductor device including a MIM capacitor, and having excellent waterproof property and antioxidant property even when being formed between wiring layers. The semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first wiring layer embedded in the first insulating film, a wiring cap film for covering the first wiring layer, the MIM capacitor formed on the wiring cap film, a hydrogen barrier film for covering the MIM capacitor, a second insulating film formed on the hydrogen barrier film, conductive plugs passing through the second insulating film and the hydrogen barrier film, one of which being connected to an upper electrode of the MIM capacitor and the other of which being connected to a lower electrode of the MIM capacitor, and a second wiring layer connected to the conductive plugs, and the upper and lower electrodes of the MIM capacitor.

    摘要翻译： 提供一种包括MIM电容器的半导体器件，即使在布线层之间形成时也具有优异的防水性和抗氧化性。 半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，嵌入第一绝缘膜中的第一布线层，用于覆盖第一布线层的布线帽膜，形成在布线帽膜上的MIM电容器， 用于覆盖MIM电容器的氢阻挡膜，形成在氢阻挡膜上的第二绝缘膜，穿过第二绝缘膜的导电插塞和氢阻挡膜，其中一个连接到MIM电容器的上电极， 另一个连接到MIM电容器的下电极，以及连接到导电插头的第二布线层，以及MIM电容器的上下电极。

    Interconnect layout method
    7.
    发明授权
    Interconnect layout method 有权
    互连布局方法

    公开(公告)号：US07294534B2

    公开(公告)日：2007-11-13

    申请号：US11244137

    申请日：2005-10-06

    申请人： Takayuki Iwaki

    发明人： Takayuki Iwaki

    IPC分类号： H01L21/82

    CPC分类号： H01L23/522 ,  H01L27/0207 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is λ, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1′, a design value of the second predetermined distance is P2′, and a design value of the third predetermined distance is P3′, then the first predetermined distance satisfies relationships of P1=m1λ and P1′−0.1λ≦P1≦P1′+0.1λ, the second predetermined distance satisfies relationships of P2=m2λ and P2′−0.1λ≦P2≦P2′+0.1λ, and the third predetermined distance satisfies relationships of P3=m3λ and P3′−0.1λ≦P3≦P3′+0.1λ.

    摘要翻译： 在互连布局100中，布置第一栅极图案，第二栅极图案，第一虚设图案和第二虚设图案，使得如果用于暴露第一栅极图案和第二栅极图案的光的波长为 λ，自然数是m 1，m 2和m 3，第一预定距离是P 1， ，第二预定距离为P <2>，第三预定距离为P 3 3，第一预定距离的设计值为P＆lt; 1＆lt; 1＆gt; 第二预定距离的设计值为P <2>，第三预定距离的设计值为P 3> 3，则第一预定距离满足关系式 P 1＆lt; 1＆gt; = 1＆lt; 1＆gt;和＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; >0.1λ，第二预定距离满足P＆lt; 2＆gt; 2＆gt; 2＆lt; 2＆lt; 2＆lt; 2＆lt; 2＆gt; 0.1λ<= P <2 第二预定距离满足P 3→3×λλ的关系和P（3） 3

    Method for manufacturing semiconductor device and semiconductor device
    8.
    发明申请
    Method for manufacturing semiconductor device and semiconductor device 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号：US20070128791A1

    公开(公告)日：2007-06-07

    申请号：US11606034

    申请日：2006-11-30

    申请人： Takayuki Iwaki

    发明人： Takayuki Iwaki

    IPC分类号： H01L21/8244 ,  H01L29/94

    CPC分类号： H01L21/823443 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

    摘要： Method for manufacturing a semiconductor device, capable of providing a reduced variation in threshold electrical voltage by inhibiting a generation of Fermi level pinning, while achieving a stable long-term reliability of a product by inhibiting a generation of leakage current, and such semiconductor device. The method includes: forming a gate electrode by: sequentially depositing a gate insulating film composed of a high dielectric constant film containing one or more metallic element(s) selected from Hf, Zr, Al, La and Ta, a barrier film composed of one or more metal nitride selected from TiN, TaN and WN, a metallic film 108 and a polycrystalline silicon film on the semiconductor substrate to form a multiple-layered film; and silicidizing a lower portion of the polycrystalline silicon film to form a lower layer by conducting a heat treatment of the multiple-layered film to diffuse the metal of the metallic film into the polycrystalline silicon film.

    摘要翻译： 这种半导体装置的制造方法能够通过抑制发生费米能级钉扎来提供阈值电压的变化，同时通过抑制泄漏电流的产生实现产品的稳定的长期可靠性。 该方法包括：通过以下方式形成栅电极：依次沉积由包含选自Hf，Zr，Al，La和Ta的一种或多种金属元素的高介电常数膜构成的栅极绝缘膜，由一个 或更多的选自TiN，TaN和WN的金属氮化物，半导体衬底上的金属膜108和多晶硅膜，以形成多层膜; 通过对多层膜进行热处理，将金属膜的金属扩散到多晶硅膜中，使多晶硅膜的下部硅化，形成下层。

    Interconnect layout method
    9.
    发明申请
    Interconnect layout method 有权
    互连布局方法

    公开(公告)号：US20060084261A1

    公开(公告)日：2006-04-20

    申请号：US11244137

    申请日：2005-10-06

    申请人： Takayuki Iwaki

    发明人： Takayuki Iwaki

    IPC分类号： H01L21/4763 ,  H01L21/3205

    CPC分类号： H01L23/522 ,  H01L27/0207 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect layout method capable of reducing variations in shape of gate patterns and improving yield of a semiconductor device is provided. In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is λ, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1′, a design value of the second predetermined distance is P2′, and a design value of the third predetermined distance is P3′, then the first predetermined distance satisfies relationships of P1=m1λ and P1′−0.1λ≦P1≦P1′+0.1λ, the second predetermined distance satisfies relationships of P2=m2λ and P2′−0.1λ≦P2≦P2′+0.1λ, and the third predetermined distance satisfies relationships of P3=m3λ and P3′−0.1λ≦P3≦P3′+0.1λ.

    摘要翻译： 提供了能够减小栅极图案的形状变化并提高半导体器件的产量的互连布局方法。 在互连布局100中，布置第一栅极图案，第二栅极图案，第一虚设图案和第二虚设图案，使得如果用于暴露第一栅极图案和第二栅极图案的光的波长为 λ，自然数是m 1，m 2和m 3，第一预定距离是P 1， ，第二预定距离为P <2>，第三预定距离为P 3 3，第一预定距离的设计值为P＆lt; 1＆lt; 1＆gt; 第二预定距离的设计值为P <2>，第三预定距离的设计值为P 3> 3，则第一预定距离满足关系式 P 1＆lt; 1＆gt; = 1＆lt; 1＆gt;和＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; >0.1λ，第二预定距离满足P＆lt; 2＆gt; 2＆gt; 2＆lt; 2＆lt; 2＆lt; 2＆lt; 2＆gt; 0.1λ<= P < 2＆lt; 2＆gt;＆lt; 2＆gt; 2＆gt; +0.1λ，并且第三预定距离满足P 3/3 = P 3 3

    Method of forming insulating film and method of manufacturing semiconductor device
    10.
    发明授权
    Method of forming insulating film and method of manufacturing semiconductor device 失效
    形成绝缘膜的方法和制造半导体器件的方法

    公开(公告)号：US07691758B2

    公开(公告)日：2010-04-06

    申请号：US11842534

    申请日：2007-08-21

    申请人： Takayuki Iwaki

    发明人： Takayuki Iwaki

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02244 ,  H01L21/02183 ,  H01L21/02255 ,  H01L21/31683 ,  H01L28/40

    摘要： A method of forming an insulating film according to one embodiment of the present invention, which is a method of forming an insulating film for use in a semiconductor device, performs thermal oxidation of a tantalum nitride film at a temperature range of 200 to 400 degrees centigrade by a wet oxidation process, whereby a tantalum oxide film is formed as the insulating film.

    摘要翻译： 根据本发明的一个实施方式的形成绝缘膜的方法，其是形成用于半导体器件的绝缘膜的方法，在200至400摄氏度的温度范围内进行氮化钽膜的热氧化 通过湿式氧化法，形成氧化钽膜作为绝缘膜。