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    Production Methods of Semiconductor Crystal and Semiconductor Substrate
    1.
    发明申请
    Production Methods of Semiconductor Crystal and Semiconductor Substrate 审中-公开
    半导体晶体和半导体基板的生产方法

    公开(公告)号：US20090155580A1

    公开(公告)日：2009-06-18

    申请号：US12225389

    申请日：2007-04-05

    申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B19/02 ,  B32B9/00 ,  B32B1/00

    CPC分类号： C30B29/403 ,  C30B9/00 ,  H01L33/0075 ,  Y10T428/265 ,  Y10T428/266

    摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.

    摘要翻译： 提供适合于制造电子器件或光学器件的高品质的半导体衬底。 本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素 在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

    Crystal growing apparatus
    4.
    发明申请
    Crystal growing apparatus 有权
    水晶生长装置

    公开(公告)号：US20080223288A1

    公开(公告)日：2008-09-18

    申请号：US12073904

    申请日：2008-03-11

    申请人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B9/12

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

    摘要翻译： 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。

    Method for producing semiconductor crystal
    5.
    发明授权
    Method for producing semiconductor crystal 有权
    半导体晶体的制造方法

    公开(公告)号：US07459023B2

    公开(公告)日：2008-12-02

    申请号：US11590930

    申请日：2006-11-01

    申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

    发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

    IPC分类号： C30B25/12

    CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

    摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

    摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

    Crystal growing apparatus
    6.
    发明授权
    Crystal growing apparatus 有权
    水晶生长装置

    公开(公告)号：US07708833B2

    公开(公告)日：2010-05-04

    申请号：US12073904

    申请日：2008-03-11

    申请人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B35/00

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

    摘要翻译： 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。

    Method for producing semiconductor crystal
    7.
    发明申请
    Method for producing semiconductor crystal 有权
    半导体晶体的制造方法

    公开(公告)号：US20070101931A1

    公开(公告)日：2007-05-10

    申请号：US11590930

    申请日：2006-11-01

    申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

    发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

    摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

    摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

    Apparatus for manufacturing group III nitride semiconductor
    10.
    发明申请
    Apparatus for manufacturing group III nitride semiconductor 有权
    III族氮化物半导体制造装置

    公开(公告)号：US20080299020A1

    公开(公告)日：2008-12-04

    申请号：US12153973

    申请日：2008-05-28

    申请人： Shiro Yamazaki ,  Koji Hirata

    发明人： Shiro Yamazaki ,  Koji Hirata

    IPC分类号： F28D21/00

    CPC分类号： C30B29/403 ,  C01B21/0632 ,  C30B9/00 ,  Y10T117/10 ,  Y10T117/1024

    摘要： An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the pressure vessel so as to heat the reaction vessel, and a glove box filled with argon gas. The pressure vessel and the glove box are connected to each other via a gate valve. By virtue of this configuration, a large-sized reusable reaction vessel can be disposed within the pressure vessel without causing oxidation of Na.

    摘要翻译： 用于制造III族氮化物半导体的装置由压力容器，设置在压力容器内的反应容器，设置在压力容器内以加热反应容器的加热装置和装有氩气的手套箱组成。 压力容器和手套箱通过闸阀相互连接。 由于这种构造，可以在压力容器内设置大尺寸的可重复使用的反应容器，而不会引起Na的氧化。