公开(公告)号：US06713789B1

公开(公告)日：2004-03-30

申请号：US09516177

申请日：2000-03-01

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

IPC分类号： H01L3300

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

摘要： A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

公开(公告)号：US06623998B2

公开(公告)日：2003-09-23

申请号：US10304033

申请日：2002-11-26

申请人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

发明人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/12 ,  H01L33/22 ,  H01L33/405 ,  H01S5/32341 ,  Y02E10/544 ,  Y10S438/978

摘要： A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the group III nitride semiconductor layer, the undercoat layer having a surface of a peak and trough structure.

摘要翻译： 一种制造III族氮化物化合物半导体器件的方法，包括提供衬底，形成具有器件功能的III族氮化物化合物半导体层，以及在衬底和III族氮化物半导体层之间形成底涂层，底涂层具有 峰和槽结构的表面。

公开(公告)号：US06939733B2

公开(公告)日：2005-09-06

申请号：US10725380

申请日：2003-12-03

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/00 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

摘要： A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

摘要翻译： 通过不使用金属有机化合物作为原料的方法在基板上形成的第一III族氮化物化合物层在含有氢或氮气和氨气的混合气体的气氛中加热，使得结晶度 形成在第一III族氮化物层上的第二III族氮化物化合物半导体层。 当通过溅射法在基板上形成第一III族氮化物化合物层时，第一III族氮化物化合物层的厚度被设定在从50到3000的范围内。

公开(公告)号：US06593016B1

公开(公告)日：2003-07-15

申请号：US09606081

申请日：2000-06-29

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： H01L2900

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 &mgr;m and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 &mgr;m is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US06918961B2

公开(公告)日：2005-07-19

申请号：US10421855

申请日：2003-04-24

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  C30B25/12 ,  C30B25/14

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 μm is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US06841808B2

公开(公告)日：2005-01-11

申请号：US09885046

申请日：2001-06-21

申请人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

发明人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/32 ,  H01L31/0328 ,  H01L27/15 ,  H01L31/0336 ,  H01L31/12

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

摘要： An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer.

摘要翻译： 在蓝宝石衬底上形成具有纹理结构表面的AlN层。 然后，在AlN层上形成生长抑制材料层，使得AlN层部分地暴露在外部。 然后，通过执行外延横向过度生长法，在AlN层和生长抑制材料层上生长III族氮化物化合物半导体层。 因此，制造了III族氮化物化合物半导体器件。 在基板上形成具有各自成形为截头六角锥的凸部的底涂层。 具有器件功能的III族氮化物化合物半导体层依次层压在底涂层上。

公开(公告)号：US06531719B2

公开(公告)日：2003-03-11

申请号：US09888519

申请日：2001-06-26

申请人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

发明人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

IPC分类号： H01L310336

CPC分类号： H01L33/32 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/12 ,  H01L33/22 ,  H01L33/405 ,  H01S5/32341 ,  Y02E10/544 ,  Y10S438/978

摘要： A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat layer has a surface which has a texture structure, or which is trapezoid shaped in section or which is pit shaped. In addition, a reflection layer made of nitride of at least one metal selected from the group consisting of titanium, zirconium, hafnium and tantalum may be formed on a surface of the undercoat layer. Also the surface of the reflection layer is formed as a texture structure, a trapezoid shape in section or a pit shape.

摘要翻译： III族氮化物化合物半导体器件具有衬底，具有器件功能的III族氮化物化合物半导体层和形成在衬底和III族氮化物半导体层之间的底涂层。 底涂层具有具有纹理结构的表面，或者是截面呈梯形或凹坑形的表面。 此外，可以在底涂层的表面上形成由选自钛，锆，铪和钽中的至少一种金属的氮化物制成的反射层。 此外，反射层的表面也形成为纹理结构，截面为梯形或凹坑形状。

公开(公告)号：US06426512B1

公开(公告)日：2002-07-30

申请号：US09518724

申请日：2000-03-03

申请人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

发明人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.

摘要翻译： 在基板上形成包含金属氮化物层的底涂层。 在内涂层上连续形成III族氮化物化合物半导体层。

公开(公告)号：US06872965B2

公开(公告)日：2005-03-29

申请号：US10020460

申请日：2001-12-18

申请人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

发明人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.

摘要翻译： 在基板上形成包含金属氮化物层的底涂层。 在内涂层上连续形成III族氮化物化合物半导体层。

公开(公告)号：US06982435B2

公开(公告)日：2006-01-03

申请号：US09985927

申请日：2001-11-06

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

IPC分类号： H01L31/0256

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639

摘要： A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.