Liquid Crystal Display
    1.
    发明申请
    Liquid Crystal Display 审中-公开
    液晶显示器

    公开(公告)号:US20080036954A1

    公开(公告)日:2008-02-14

    申请号:US11573736

    申请日:2005-12-12

    IPC分类号: G02F1/1335

    摘要: The liquid crystal display of the present invention comprises a liquid crystal cell; and a laminated optical film mounted together with a polarizing plate on each of both sides of the liquid crystal cell, the laminated optical film comprising a laminate that comprises: an optical film (1) obtained by stretching a polymer film comprising a polycarbonate resin and a styrene resin, wherein a photoelastic coefficient is 2.0×10−11 to 6.0×10−11 m2/N, and a three dimensional refractive index is controlled so that an Nz coefficient expressed with Nz=(nx1−nz1)/(nx1−ny1) satisfy a relationship of Nz≦0.9, and a front retardation (Re)=(nx1−ny1)×d1 satisfy a relationship of Re≧80 nm, an optical film (2) showing optically positive uniaxial property that satisfies a relationship of nx2>ny2≅nz2, and an optical film (3) formed of a material showing optically negative uniaxial property, and the material being tilting aligned. The liquid crystal display enables inhibition of coloring of display image for observation of a display picture in a diagonal direction to normal line of a screen, and enables display of an image having little gradation inversion areas, and that has outstanding durability.

    摘要翻译: 本发明的液晶显示器包括液晶单元; 以及与所述液晶单元的两侧的偏振板一起安装的层压光学薄膜,所述层压型光学薄膜包括层叠体,所述层叠型光学薄膜包括:光学薄膜(1),其通过将包含聚碳酸酯树脂和 苯乙烯树脂,其中光弹性系数为2.0×10 -6〜6.0×10 -2 m 2 / N,三维折射率为 被控制使得以Nz =(nx1-nz1 / 1)表示的Nz系数/(nx < SUB>)满足Nz <= 0.9的关系,并且前向延迟(Re)=(nx×1×1×1×x×1×1× 满足Re> = 80nm的关系,表现出光学正性单轴性质的光学膜(2),其满足关系nx <2 ny2 和由表现出光学上负的单轴性质的材料形成的光学膜(3),并且该材料被倾斜对齐。 液晶显示器能够抑制用于观察与屏幕的法线对齐的方向的显示图像的显示图像的着色,并且能够显示具有很小渐变反转区域的图像,并且具有优异的耐久性。

    Semiconductor integrated circuit device
    7.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号:US08786092B2

    公开(公告)日:2014-07-22

    申请号:US13240054

    申请日:2011-09-22

    IPC分类号: H01L23/50

    摘要: A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.

    摘要翻译: 半导体集成电路器件包括:矩形半导体衬底; 形成在所述半导体衬底上或之上的金属布线层; 以及覆盖金属布线层的钝化层。 在半导体基板的角部设置没有形成金属布线层的部分的角部非布线区域。 在金属布线层的靠近半导体基板的角部的部分形成狭缝。 钝化层包括形成在金属布线层上的第一钝化层和形成在第一钝化层上的第二钝化层。 第一钝化层由比第二钝化层的材料软的材料形成。

    Nut, female thread machining device and female thread machining method
    8.
    发明授权
    Nut, female thread machining device and female thread machining method 有权
    螺母,内螺纹加工装置和内螺纹加工方法

    公开(公告)号:US08419556B2

    公开(公告)日:2013-04-16

    申请号:US12547001

    申请日:2009-08-25

    IPC分类号: B21D53/24 B21H3/08 B21K1/64

    摘要: There is provided a nut having a thread portion having a female thread, a metallic plate portion having a base segment, and a hardness gradient portion provided between the thread portion and the metallic plate portion. The thread portion, metallic plate portion and the hardness gradient portion are monolithic each other, a metallographic structure of the metallic plate portion differs from a metallographic structure of the thread portion and a hardness of the hardness gradient portion is lower than a hardness of the thread portion and lowers from the thread portion toward the metallic plate portion.

    摘要翻译: 提供一种具有内螺纹的螺纹部分的螺母,具有基部段的金属板部分和设置在螺纹部分和金属板部分之间的硬度梯度部分。 螺纹部分,金属板部分和硬度梯度部分是彼此整体的,金属板部分的金相组织与螺纹部分的金相组织不同,硬度梯度部分的硬度低于螺纹的硬度 从螺纹部分向金属板部分下降。