公开(公告)号：US06174463B1

公开(公告)日：2001-01-16

申请号：US09048050

申请日：1998-03-26

申请人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： H01B108

CPC分类号： C30B25/22 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

摘要： A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2±0.17)/(m−1) including the stoichiometric composition ratio 2/(m−1), where m is an integer from, and including, 2 to 5.

摘要翻译： 包含铋（Bi），第一元素，第二元素和氧（O）的层结晶氧化物和包含它的记忆元件，其中第一元素是选自由钠（Na）， 钾（K），钙（Ca），钡（Ba），锶（Sr），铅（Pb）和铋（Bi）中的至少一种，第二元素是选自铁（Fe） （Ti），铌（Nb），钽（Ta）和钨（W），铋相对于第二元素的组成比大于化学计量组成比，其中，铋与 相对于第一元素在包括化学计量组成比2 /（m-1）的（2±0.17）/（m-1）的范围内，其中m是从2到5的整数。

公开(公告)号：US6106616A

公开(公告)日：2000-08-22

申请号：US149712

申请日：1998-09-09

申请人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： C30B23/02 ,  C30B25/22 ,  C30B23/06

CPC分类号： C30B25/22 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

摘要： A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.

摘要翻译： 一种晶体结构氧化物的制造方法，包括以下步骤：通过加热材料来蒸发材料以产生气相，并在沉淀部分从气相析出晶体，从而产生层状结晶氧化物。 在大于或等于约10mm至约30mm的范围内远离材料提供沉淀部分。

公开(公告)号：US06207082B1

公开(公告)日：2001-03-27

申请号：US08848613

申请日：1997-04-29

申请人： Masayuki Suzuki ,  Naomi Nagasawa ,  Akio Machida ,  Takaaki Ami

发明人： Masayuki Suzuki ,  Naomi Nagasawa ,  Akio Machida ,  Takaaki Ami

IPC分类号： H01B102

CPC分类号： H01L21/31691 ,  C01G29/006 ,  C01G35/006 ,  C01P2002/20 ,  C01P2002/72 ,  C01P2002/88 ,  C01P2006/60 ,  C30B9/00 ,  C30B29/30

摘要： A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400° C. for several ten minutes by a self-flux method using Bi2O3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi2−aMe1+bR2O9+c where a, b, and c are values in ranges of 0

摘要翻译： 表现出顺电特性的层状氧化物和具有优选的剩余极化的层状氧化物及其制造方法。 通过使用Bi 2 O 3作为主要成分的自身通过法，通过在约1400℃的高温下加热原料数十分钟来制造含有Bi，第一成分Me，第二成分R和O的层状氧化物。 助焊剂 第一组分Me由选自Sr，Pb，Ba和Ca中的至少一种组成，第二组分R由选自Nb和Ta中的至少一种组成。 氧化物的组成式由Bi2-aMe1 + bR2O9 + c表示，其中a，b和c是0

公开(公告)号：US6143679A

公开(公告)日：2000-11-07

申请号：US943791

申请日：1997-10-03

申请人： Naomi Nagasawa ,  Akio Machida ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Naomi Nagasawa ,  Akio Machida ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： C30B9/00 ,  C04B35/01 ,  C04B35/50

CPC分类号： C30B29/225 ,  C30B29/32 ,  C30B9/00

摘要： Provided are a layered crystal structure oxide showing ferroelectricity or paraelectricity and a process for easily producing the same. A raw material containing Bi.sub.2 O.sub.3 as a flux is heated up to 1330.degree. C. or higher and 1450.degree. C. or lower at a suitable temperature-elevating rate (heating step); the raw material is maintained at this heating temperature for prescribed time (constant temperature step); and then, it is slowly cooled down to 800.degree. C. or higher and 1300.degree. C. or lower at a rate of 1.degree. C./hour or more and 20.degree. C./hour or less (slow cooling step). This makes it possible to evaporate the flux and take out directly Bi.sub.2 SrTa.sub.2 O.sub.9. In this Bi.sub.2 SrTa.sub.2 O.sub.9, Bi is partially substituted with Sr, and oxygen is selectively deficient or disordered. Or, Bi and O in the fluorite layer are relatively displaced each other in the polarization direction.

摘要翻译： 提供了显示铁电性或顺电性的层状晶体结构氧化物及其制造方法。 将含有Bi 2 O 3作为助熔剂的原料以合适的升温速度（加热步骤）加热至1330℃以上且1450℃以下。 原料在该加热温度下保持规定时间（恒温步骤）; 然后以1℃/小时以上20℃/小时以下的速度缓慢冷却至800℃以上且1300℃以下（缓慢冷却工序）。 这使得可以蒸发通量并直接取出Bi2SrTa2O9。 在Bi2SrTa2O9中，Bi部分被Sr取代，氧被选择性地缺陷或无序。 或者，萤石层中的Bi和O在偏振方向上相对位移。

公开(公告)号：US06927436B1

公开(公告)日：2005-08-09

申请号：US10429616

申请日：2003-05-05

申请人： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

发明人： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC分类号： C30B23/02 ,  H01L21/02 ,  H01L21/316 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76

CPC分类号： C30B23/02 ,  C30B29/16 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/516 ,  H01L29/78391

摘要： An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

摘要翻译： 外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并将立方晶系或四方晶系稀土氧化物如CeO 2 例如通过分子束外延在Si衬底上以（001）取向外延生长。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。 如果需要，在生长后在真空中进行退火。

公开(公告)号：US06749686B2

公开(公告)日：2004-06-15

申请号：US10127155

申请日：2002-04-19

申请人： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

发明人： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC分类号： C30B2502

CPC分类号： H01L21/02293 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02192 ,  H01L21/3147 ,  H01L21/31604 ,  H01L21/31654

摘要： An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.

摘要翻译： 外延稀土氧化物（110）/硅（001）结构通过在（001）取向的硅衬底上以比常规的生长温度外延生长（110）取向中的二氧化铈等稀土氧化物 。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜 通过使用由至少一种稀土元素构成的源材料，在含有氧化性气体的气氛中在Si衬底上的（110）取向。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。

公开(公告)号：US06610548B1

公开(公告)日：2003-08-26

申请号：US09532793

申请日：2000-03-22

申请人： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

发明人： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC分类号： H01L2100

CPC分类号： H01L21/02293 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02192 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/516 ,  H01L29/78391

摘要： An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

摘要翻译： 外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜 例如通过分子束外延在Si衬底上的（001）取向。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。 如果需要，在生长后在真空中进行退火。

公开(公告)号：US06171871B2

公开(公告)日：2001-01-09

申请号：US09078678

申请日：1998-05-14

申请人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  H01L21/31691 ,  H01L27/11507

摘要： It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

摘要翻译： 旨在提供具有优异的铁电性的铁电体。 提供的铁电体是具有由Bi，第一元素Me，第二元素R和O组成的层状晶体结构的氧化物。第一元素Me是选自Na，K，Ca ，Ba，Sr，Pb和Bi。 第二元素R是选自Fe，Ti，Nb，Ta和W中的至少一种元素。铁电体全体的98％以上表现出铁电性。 在通过气相法（晶体生长步骤）生长具有层状晶体结构的氧化物之后，将电极附着到具有层状晶体结构的氧化物并施加电压（电压施加步骤）。 结果，至少部分地校正晶格的应变，由于由于失去晶格的对称性的这种大的应变，完全不显示铁电性的部分或者没有表现出优异的铁电性，从而表现出优异的铁电性 。

公开(公告)号：US5904766A

公开(公告)日：1999-05-18

申请号：US732923

申请日：1996-10-17

申请人： Takaaki Ami ,  Katsuyuki Hironaka ,  Koji Watanabe ,  Akio Machida

发明人： Takaaki Ami ,  Katsuyuki Hironaka ,  Koji Watanabe ,  Akio Machida

IPC分类号： C01G35/00 ,  C04B35/495 ,  C30B25/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  C30B1/10

CPC分类号： C04B35/495 ,  C30B25/02 ,  C30B29/22

摘要： Provided is a process for preparing a bismuth compound at a heat treatment temperature lower than conventional. A bismuth compound is prepared by the steps of heating under vacuum to form a reduced phase and heating under oxidizing environment of normal or lower pressure.

摘要翻译： 提供了在比常规低的热处理温度下制备铋化合物的方法。 通过在真空下加热以形成还原相并在正常或低压的氧化环境下加热的步骤制备铋化合物。

公开(公告)号：US08357620B2

公开(公告)日：2013-01-22

申请号：US12574024

申请日：2009-10-06

申请人： Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

发明人： Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

IPC分类号： H01L21/00

CPC分类号： B23K26/03 ,  H01L22/26

摘要： An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

摘要翻译： 本发明的一个实施例提供了一种激光退火方法，包括以下步骤：扫描激光束为非晶膜时，在基板上的非晶膜上照射激光，使非晶膜结晶，检测从 基板和激光束的扫描速度，同时对非晶膜进行激光束的辐射和扫描，并且基于光量的比较结果控制激光束的辐射水平和扫描速度 从基板反射的激光束和激光束的扫描速度具有各自的预设参考。