公开(公告)号：US07473980B2

公开(公告)日：2009-01-06

申请号：US11540537

申请日：2006-10-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L29/00

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

摘要翻译： 半导体器件包括形成在半导体衬底10上的电容器，包括下电极32，形成在下电极上的电介质膜34和形成在电介质膜上的上电极36，形成在半导体衬底上的第一绝缘膜42和 电容器，形成在第一绝缘膜上并电连接到电容器的第一互连48，用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50，第二绝缘膜58 形成在第一氢扩散防止膜上并且具有表面平坦化，形成在第二绝缘膜上的第三绝缘膜62，形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二防扩散膜72 形成在第三绝缘膜上的氢，覆盖第二绝缘膜 连接。 由于位于电容器上方的第二氢扩散防止膜被平坦化，所以可靠地防止电介质膜被氢还原。

公开(公告)号：US07655531B2

公开(公告)日：2010-02-02

申请号：US12292980

申请日：2008-12-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L21/20

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

摘要翻译： 半导体器件包括形成在半导体衬底10上的电容器，包括下电极32，形成在下电极上的电介质膜34和形成在电介质膜上的上电极36，形成在半导体衬底上的第一绝缘膜42和 电容器，形成在第一绝缘膜上并电连接到电容器的第一互连48，用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50，第二绝缘膜58 形成在第一氢扩散防止膜上并且具有表面平坦化，形成在第二绝缘膜上的第三绝缘膜62，形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二防扩散膜72 形成在第三绝缘膜上的氢，覆盖第二绝缘膜 连接。 由于位于电容器上方的第二氢扩散防止膜被平坦化，所以可靠地防止电介质膜被氢还原。

公开(公告)号：US20090130815A1

公开(公告)日：2009-05-21

申请号：US12292980

申请日：2008-12-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

公开(公告)号：US06509593B2

公开(公告)日：2003-01-21

申请号：US09750069

申请日：2000-12-29

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源极/漏极和存储单元区域中的电容器，然后将插头填充到触点中 孔，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。

公开(公告)号：US20070063241A1

公开(公告)日：2007-03-22

申请号：US11540537

申请日：2006-10-02

申请人： Naoya Sashida ,  Tatsuya Yokota

发明人： Naoya Sashida ,  Tatsuya Yokota

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L21/76834 ,  H01L21/7682 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

摘要翻译： 半导体器件包括形成在半导体衬底10上的电容器，包括下电极32，形成在下电极上的电介质膜34和形成在电介质膜上的上电极36，形成在半导体衬底上的第一绝缘膜42和 电容器，形成在第一绝缘膜上并电连接到电容器的第一互连48，用于防止在第一绝缘膜上形成的覆盖第一互连的氢的扩散的第一防氢膜50，第二绝缘膜58 形成在第一氢扩散防止膜上并具有表面平坦化，形成在第二绝缘膜上的第三绝缘膜62，形成在第三绝缘膜上的第二互连70b和用于防止扩散的第二氢扩散防止膜72 的第三绝缘膜上形成的氢，覆盖第二绝缘膜 互连。 由于位于电容器上方的第二氢扩散防止膜被平坦化，所以可靠地防止电介质膜被氢还原。

公开(公告)号：US06913970B2

公开(公告)日：2005-07-05

申请号：US10303752

申请日：2002-11-26

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L21/20

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源/漏和存储单元区域中的电容器，然后将插头填充到接触孔 ，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。

公开(公告)号：US08511903B2

公开(公告)日：2013-08-20

申请号：US12704221

申请日：2010-02-11

申请人： Yoshinori Masuda ,  Tatsuya Yokota ,  Motonori Nakao

发明人： Yoshinori Masuda ,  Tatsuya Yokota ,  Motonori Nakao

IPC分类号： F16C13/00 ,  B21D22/00

CPC分类号： B21K1/40 ,  B21K1/12 ,  B60B27/00 ,  F16C33/64 ,  F16C2326/02

摘要： A wheel bearing device of the invention includes a flanged shaft member that includes a shaft portion to which a rolling bearing is assembled, a fitting shaft portion that is formed on one end side of the shaft portion and that is fitted to a center hole of a wheel, and a plurality of flange portions that extend radially outward on an outer peripheral surface located between the shaft portion and the fitting shaft portion and each of which has a through bolt hole in which a hub bolt for fastening the wheel is arranged. Each flange portion of the wheel bearing device is formed by side extrusion when a forged recess is formed at a center of an end surface of the fitting shaft portion by cold forging. An edge portion of a cross-sectional shape taken perpendicularly to a longitudinal direction of each flange portion is formed in an R-chamfered shape.

摘要翻译： 本发明的车轮轴承装置包括：凸缘轴构件，其包括轴组件的滚动轴承的轴部，形成在所述轴部的一端侧并且嵌合于所述轴部的中心孔的嵌合轴部 轮和多个凸缘部，其在位于所述轴部和所述嵌合轴部之间的外周面上径向向外延伸，并且每个所述凸缘部具有贯通螺栓孔，所述贯通螺栓孔配置有用于紧固所述车轮的轮毂螺栓。 当通过冷锻在安装轴部的端面的中心形成锻造凹部时，车轮轴承装置的每个凸缘部分由侧挤出形成。 沿着每个凸缘部分的纵向方向垂直截取的横截面形状的边缘部分形成为R倒角形状。

公开(公告)号：US20080100127A1

公开(公告)日：2008-05-01

申请号：US11663353

申请日：2005-09-26

申请人： Tatsuya Yokota

发明人： Tatsuya Yokota

IPC分类号： B60B27/00 ,  B60B3/16

CPC分类号： B60B27/0094 ,  B60B27/00 ,  B60B27/0005 ,  B60B27/0084 ,  F16C19/186 ,  F16C35/06 ,  F16C2326/02

摘要： A hub unit for vehicle according to the invention includes a flange formed with plural bolt-hole groups each of which includes plural bolt holes each having a female thread of the same nominal diameter formed in its inside surface and each of which has a hole-pattern of the bolt holes circumferentially arranged on the same pitch circle diameter with equal spacing. The plural bolt-hole groups are mutually different in at least either one of the nominal female-thread diameter and the pitch circle diameter R, so that plural types of components having different hole-patterns may be directly mounted to the flange without using an adaptor as an independent member. This leads to cost reduction.

摘要翻译： 根据本发明的用于车辆的轮毂单元包括形成有多个螺栓孔组的凸缘，每个螺栓孔组包括多个螺栓孔，每个螺栓孔具有形成在其内表面中的相同公称直径的阴螺纹，并且每个具有孔图案 的螺栓孔以相等的间距圆周地布置在相同的节圆直径上。 多个螺栓孔群在公称内螺纹直径和节圆直径R中的至少一个中是相互不同的，因此具有不同孔图案的多种类型的部件可以直接安装到法兰上而不使用适配器 作为独立成员。 这导致成本降低。

公开(公告)号：US20070269155A1

公开(公告)日：2007-11-22

申请号：US11802177

申请日：2007-05-21

申请人： Tatsuki Mori ,  Shunichi Matsui ,  Tatsuya Yokota ,  Hiroshi Yano ,  Kenji Shitsukawa ,  Yoshiomi Matsuo

发明人： Tatsuki Mori ,  Shunichi Matsui ,  Tatsuya Yokota ,  Hiroshi Yano ,  Kenji Shitsukawa ,  Yoshiomi Matsuo

IPC分类号： F16C13/00

CPC分类号： B60B27/00 ,  F16B21/183 ,  F16B21/186 ,  F16B35/048 ,  F16C19/186 ,  F16C35/06 ,  F16C2326/02

摘要： A rolling bearing device for a wheel includes: a hub wheel including a hub spindle to be assembled with a rolling bearing, a flange formed on the hub spindle, and a bolt hole formed through the flange; a hub bolt to be press-fitted in the bolt hole, in which hub bolt includes a shank formed with a serrated shank portion to press-fitted to bite the bolt hole, an intermediate shank portion and a threaded portion in this order; and an annular ridge formed on an inner circumference of an opening on a press-fit exit side of the bolt hole. The annular ridge have a diameter smaller than that of the bolt hole and comes into contact or close to the intermediate shank portion to clog the bolt hole.

摘要翻译： 一种用于车轮的滚动轴承装置，包括：轮毂轮，其包括与滚动轴承组装的轮毂心轴，形成在轮毂心轴上的凸缘和通过凸缘形成的螺栓孔; 螺栓孔，其中毂螺栓包括形成有锯齿状柄部的柄部，以便按顺序咬合螺栓孔，中间柄部和螺纹部; 以及形成在螺栓孔的压配合出口侧的开口的内周上的环形凸缘。 环形脊的直径小于螺栓孔的直径，并与中间柄部接触或闭合，从而堵塞螺栓孔。

公开(公告)号：US06908867B2

公开(公告)日：2005-06-21

申请号：US10460248

申请日：2003-06-13

申请人： Tatsuya Yokota

发明人： Tatsuya Yokota

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/314 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/31

CPC分类号： H01L27/11502 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L27/11507 ,  H01L28/40

摘要： There are contained the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on a first insulating film, forming an upper electrode of a capacitor by patterning the second conductive film, patterning the dielectric film to leave under the upper electrode, forming a lower electrode of the capacitor by patterning the first conductive film, covering the capacitor and the first insulating film with a second insulating film, and annealing at least one of the first insulating film and the second insulating film in an inert-gas atmosphere and then exposing the film to an N2O plasma.

摘要翻译： 包括在第一绝缘膜上依次形成第一导电膜，电介质膜和第二导电膜的步骤，通过图案化第二导电膜形成电容器的上电极，使电介质膜图案化， 上电极，通过图案化所述第一导电膜，用第二绝缘膜覆盖所述电容器和所述第一绝缘膜，形成所述电容器的下电极，并且将所述第一绝缘膜和所述第二绝缘膜中的至少一个退火， 气体气氛，然后将膜暴露于N 2 O 3等离子体。