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    Running control device for electric vehicle
    3.
    发明授权
    Running control device for electric vehicle 有权
    电动车运行控制装置

    公开(公告)号：US08744656B2

    公开(公告)日：2014-06-03

    申请号：US13296777

    申请日：2011-11-15

    申请人： Shinya Sato ,  Naoyuki Tashiro ,  Kentaro Maki ,  Atsushi Yokoyama

    发明人： Shinya Sato ,  Naoyuki Tashiro ,  Kentaro Maki ,  Atsushi Yokoyama

    IPC分类号： B60L11/00

    CPC分类号： B60L15/20 ,  B60L7/14 ,  B60L11/1803 ,  B60L2240/12 ,  B60L2240/421 ,  B60L2240/423 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/72 ,  Y02T10/7275 ,  Y02T10/92

    摘要： A running control device for an electric vehicle includes: a first calculation unit that calculates a predetermined reference torque required for braking/driving the motor that provides a beneficial effect with regard to power consumption of the electric vehicle; a second calculation unit that calculates interval allocation between a first interval in which the electric vehicle is propelled by braking/driving the motor at the predetermined reference torque and a second interval in which the electric vehicle is coasted without the motor being braked or driven; a third calculation unit that calculates a control requested torque for braking/driving the motor intermittently, so as alternatingly to repeat running of the electric vehicle in the first intervals and coasting of the electric vehicle in the second intervals; and a running control unit that performs running control of the electric vehicle by braking/driving the motor intermittently according to the control requested torque.

    摘要翻译： 一种用于电动车辆的行驶控制装置包括：第一计算单元，其计算关于电动车辆的功率消耗提供有益效果的制动/驱动电动机所需的预定参考转矩; 第二计算单元，其计算通过以预定的基准转矩制动/驱动电动机来推进电动车辆的第一间隔之间的间隔分配和电动车辆在没有电动机被制动或驱动的情况下滑行的第二间隔; 第三计算单元，其间歇地计算用于制动/驱动所述电动机的控制要求转矩，以交替地重复所述电动车辆在所述第一间隔中的行驶和所述电动车辆在所述第二间隔中的滑行; 以及运行控制单元，其通过根据所述控制要求转矩间歇地制动/驱动所述电动机来执行所述电动车辆的行驶控制。

    Silicon carbide single crystal wafer and manufacturing method for same
    5.
    发明授权
    Silicon carbide single crystal wafer and manufacturing method for same 有权
    碳化硅单晶晶片及其制造方法相同

    公开(公告)号：US09234297B2

    公开(公告)日：2016-01-12

    申请号：US14241623

    申请日：2012-08-29

    申请人： Shinya Sato ,  Tatsuo Fujimoto ,  Hiroshi Tsuge ,  Masakazu Katsuno

    发明人： Shinya Sato ,  Tatsuo Fujimoto ,  Hiroshi Tsuge ,  Masakazu Katsuno

    IPC分类号： B32B3/02 ,  C30B23/02 ,  C30B29/36 ,  C30B23/00 ,  H01L29/16

    CPC分类号： C30B23/02 ,  C30B23/00 ,  C30B29/36 ,  H01L29/1608 ,  Y10T428/21

    摘要： Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced.The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.5×R centered around a center point O of the substrate and a doughnut-shaped peripheral region remaining by excluding the center circle region are defined, the average value of screw dislocation densities observed in the doughnut-shaped peripheral region is 80% or less of the average value of screw dislocation densities observed in the center circle region.

    摘要翻译： 提供一种制造具有高结晶质量，特别是极低螺旋位错密度的SiC单晶的方法和通过该方法获得的SiC单晶锭。 特别地，提供了碳化硅单晶基板，其是从通过物理运输（PVT）方法生长的块状碳化硅单晶切割的基板，其中在周边区域中的螺旋位错密度小于中心 区域，使得螺旋位错部分减少。 该方法是通过使用晶种的PVT方法制造SiC单晶的方法，并且该锭是通过该方法获得的SiC单晶锭。 特别地，碳化硅单晶衬底是碳化硅单晶衬底，其中当通过将衬底的直径表示为R时，以衬底的中心点O为中心的直径为0.5×R的中心圆区域， 定义了通过排除中心圆区域而剩余的环状周边区域，在圆环状周边区域观察到的螺旋位错密度的平均值为在中心圆区域观察到的螺旋位错密度的平均值的80％以下 。

    Liquid crystal optical element and optical pickup apparatus
    6.
    发明授权
    Liquid crystal optical element and optical pickup apparatus 有权
    液晶光学元件和光学拾取装置

    公开(公告)号：US08891034B2

    公开(公告)日：2014-11-18

    申请号：US12413414

    申请日：2009-03-27

    申请人： Yoshiharu Takane ,  Shinya Sato ,  Nobuhiro Sato

    发明人： Yoshiharu Takane ,  Shinya Sato ,  Nobuhiro Sato

    IPC分类号： G02F1/133 ,  G02F1/13 ,  G09G3/36 ,  G02B5/18 ,  G11B7/1369 ,  G11B7/1353

    CPC分类号： G11B7/1353 ,  G02B5/1828 ,  G11B7/1369

    摘要： A liquid crystal optical element having a crystal liquid optical element adapted to positively function as a diffraction element and an optical pickup apparatus including the liquid crystal optical element are disclosed. A transparent electrode having a diffraction pattern is arranged on one of a pair of transparent substrates. A liquid crystal panel has a transparent opposed electrode arranged on the other one of the pair of the transparent substrates. A driving unit generates a phase difference distribution in the liquid crystal layer by generating a potential difference between the transparent electrode and the transparent opposed electrode and causes the liquid crystal panel to function as a diffraction element for diffracting the incoming light beam transmitted therethrough. The diffraction pattern or the transparent opposed electrode is divided into a plurality of regions. The driving unit adjusts the potential difference for each of the regions.

    摘要翻译： 公开了一种液晶光学元件，其具有适用于作为衍射元件的结晶液体光学元件和包括该液晶光学元件的光学拾取装置。 具有衍射图案的透明电极设置在一对透明基板中的一个上。 液晶面板具有布置在一对透明基板中的另一个上的透明相对电极。 驱动单元通过产生透明电极和透明相对电极之间的电位差而在液晶层中产生相位差分布，并使液晶面板用作用于衍射透射入射光束的衍射元件。 衍射图案或透明相对电极被分成多个区域。 驱动单元调整每个区域的电位差。

    UREA SOLUTION REFORMER AND EXHAUST GAS PURIFIER USING SAME
    7.
    发明申请
    UREA SOLUTION REFORMER AND EXHAUST GAS PURIFIER USING SAME 有权
    UREA解决方案改造器和使用相同的排气净化器

    公开(公告)号：US20140047821A1

    公开(公告)日：2014-02-20

    申请号：US14005096

    申请日：2012-03-14

    申请人： Yoshihiro Kawada ,  Shinya Sato ,  Mitsuru Hosoya ,  Kazunori Takahashi ,  Hiroshi Inoue

    发明人： Yoshihiro Kawada ,  Shinya Sato ,  Mitsuru Hosoya ,  Kazunori Takahashi ,  Hiroshi Inoue

    IPC分类号： F01N3/10

    CPC分类号： F01N3/10 ,  B01J29/072 ,  B01J35/04 ,  B01J37/0246 ,  F01N3/2066 ,  F01N2240/25 ,  F01N2240/40 ,  F01N2610/02 ,  F01N2610/06 ,  F01N2610/08 ,  F01N2610/10 ,  F01N2610/14 ,  F01N2610/1453 ,  Y02T10/24

    摘要： Disclosed is a urea solution reformer and an exhaust gas purifier using the same, configured to heat a carrier gas supplied from a carrier gas source by a carrier gas heating unit (16), to inject the carrier gas heated by the carrier gas heating unit from a carrier gas injecting nozzle (17), and to cause a urea solution (18) to be supplied by a first urea solution supply nozzle (21) to a tip end of the carrier gas injecting nozzle so that the urea solution is atomized by the carrier gas injected from the carrier gas injecting nozzle. Provided to face toward the carrier gas injecting nozzle is a catalyst unit (23) for decomposing the atomized urea solution to reform it into an ammonia gas. Further provided is an ammonia gas supply nozzle (24) attached to an exhaust pipe (12) of an engine so as to supply the ammonia gas discharged from an outlet of the catalyst unit into the exhaust pipe. The urea solution is sufficiently atomized, and thus reformed into an ammonia gas by the catalyst unit with a good efficiency.

    摘要翻译： 公开了一种尿素溶液重整器和使用该尿素溶液重整器的废气净化器，其被构造成通过载气加热单元（16）加热由载气源供给的载气，以将由载气加热单元加热的载气从 载气注入喷嘴（17），并且通过第一尿素溶液供给喷嘴（21）将尿素溶液（18）供给到载气注入喷嘴的前端，使得尿素溶液被 从载气喷射喷嘴喷射载气。 面向载气注入喷嘴的是用于分解雾化的尿素溶液以将其重整成氨气的催化剂单元（23）。 还提供了附接到发动机的排气管（12）的氨气供给喷嘴（24），以将从催化剂单元的出口排出的氨气供应到排气管中。 尿素溶液充分雾化，由此，催化剂单元以良好的效率将氨气体重整成氨气。

    Test apparatus and test method
    8.
    发明授权
    Test apparatus and test method 有权
    试验装置及试验方法

    公开(公告)号：US07904765B2

    公开(公告)日：2011-03-08

    申请号：US11857449

    申请日：2007-09-19

    申请人： Masahiko Hata ,  Shinya Sato

    发明人： Masahiko Hata ,  Shinya Sato

    IPC分类号： G11C29/38 ,  G11C29/50

    CPC分类号： G11C29/56 ,  G11C16/04 ,  G11C29/006 ,  G11C2029/0401 ,  G11C2029/5602

    摘要： Provided is a test apparatus including: test signal supply sections supplying a test signal writing test data to the connected memory under test, to a terminal of the memory; terminal correspondence determination sections outputting a terminal unit determination result indicating whether test data from the connected terminal matches an expected value; a determination result selection section selecting, for each memory, terminal unit determination results from the terminal correspondence determination sections; a memory correspondence determination section determining whether writing succeeded to each memory, based on the selection result by the determination result selection section; an identifying section identifying a test signal supply section connected to the memory to which writing succeeded and a test signal supply section connected to the memory to which writing failed; and a mask treatment section instructing each test signal supply section whether to perform re-testing, according to whether writing succeeded.

    摘要翻译： 提供了一种测试装置，包括：测试信号提供部分，将测试信号提供给连接的被测试的存储器，将测试数据写入存储器的终端; 终端对应确定部分，输出指示来自所连接终端的测试数据是否匹配期望值的终端单元确定结果; 确定结果选择部分，从终端对应确定部分为每个存储器选择终端单元确定结果; 存储器对应决定部，基于所述判定结果选择部的选择结果，确定是否对每个存储器进行写入; 识别部分，识别连接到写入成功的存储器的测试信号提供部分和连接到写入失败的存储器的测试信号提供部分; 以及掩模处理部，根据写入是否成功指示每个测试信号提供部分是否执行重新测试。

    Test apparatus, and method of manufacturing semiconductor memory
    9.
    发明授权
    Test apparatus, and method of manufacturing semiconductor memory 有权
    测试装置和制造半导体存储器的方法

    公开(公告)号：US07661043B2

    公开(公告)日：2010-02-09

    申请号：US11477245

    申请日：2006-06-29

    申请人： Shinya Sato

    发明人： Shinya Sato

    IPC分类号： G11C29/00

    CPC分类号： G11C29/56 ,  G01R31/31935 ,  G11C29/56004

    摘要： A test apparatus includes a pattern memory for storing a test pattern to be inputted to a memory-under-test, an address generating section for sequentially outputting addresses of the memory-under-test into which the test pattern is to be written, a pointer section for sequentially pointing each address of the pattern memory to cause the pattern memory to output the test pattern in synchronism with the address of the memory-under-test outputted out of the address generating section, a bad block memory for storing an address of a bad block of the memory-under-test in advance and a pointer control section for causing the address generating section to output a next address of the memory-under-test while holding the address of the pattern memory outputted out of the pointer section when the address of the memory-under-test generated by the address generating section coincides with any one of addresses stored in the bad block memory.

    摘要翻译： 测试装置包括用于存储要输入到被测存储器的测试模式的模式存储器，地址产生部分，用于顺序地输出要写入测试模式的待测存储器的地址，指针 用于顺序地指示图案存储器的每个地址，使得图案存储器与从地址生成部分输出的被测存储器的地址同步地输出测试图案;坏块存储器，用于存储 预先存储器未测试的坏块和指针控制部分，用于使得地址生成部分在保持从指针部分输出的模式存储器的地址的同时输出待测存储器的下一个地址时 由地址生成部生成的被测存储器的地址与存储在坏块存储器中的任一地址一致。

    NI-BASED CORROSION RESISTANT ALLOY AND CORROSION RESISTANT MEMBER FOR SUPERCRITICAL AMMONIA REACTOR MADE OF THE ALLOY
    10.
    发明申请
    NI-BASED CORROSION RESISTANT ALLOY AND CORROSION RESISTANT MEMBER FOR SUPERCRITICAL AMMONIA REACTOR MADE OF THE ALLOY 有权
    耐碱耐腐蚀合金及耐腐蚀材料的合金超临界反应器

    公开(公告)号：US20090280024A1

    公开(公告)日：2009-11-12

    申请号：US12064297

    申请日：2006-08-22

    申请人： Yoshihiko Yamamura ,  Shinya Sato ,  Shinichi Nishiya

    发明人： Yoshihiko Yamamura ,  Shinya Sato ,  Shinichi Nishiya

    IPC分类号： C22C19/05

    CPC分类号： B01J3/008 ,  B01J19/02 ,  B01J2219/0236 ,  B01J2219/0277 ,  B01J2219/029 ,  C22C19/052 ,  C22C19/053 ,  C22C19/055 ,  C22C19/056 ,  Y02P20/544

    摘要： The invention intends to provide a material that exhibits excellent corrosion resistance to supercritical ammonia and is suitable for a supercritical ammonia reactor.An Ni-based corrosion resistant alloy includes from 15% or more to 50% or less by mass of Cr and any one or both of Mo and W, wherein a [(content of Mo)+0.5×(content of W)] is from 1.5% or more to 8.5% or less by mass, a value of 1.8×[% content of Cr]/{[% content of Mo]+0.5×[% content of W]} is from 3.0 or more to 70.0 or less and the balance is Ni and an unavoidable impurity. Preferably, content of Fe is less than 3% by mass, and content of C is less than 0.05% by mass. The alloy is used to configure a supercritical ammonia reactor or the material is coated on a surface that contacts with a supercritical ammonia fluid. The alloy exhibits excellent corrosion resistance to supercritical ammonia and a mineralizer added the supercritical ammonia. The safety and reliability of an apparatus can be improved, the producing cost can be reduced, the apparatus lifetime can be extended and the running cost can be reduced.

    摘要翻译： 本发明旨在提供一种对超临界氨具有优异耐腐蚀性并适用于超临界氨反应器的材料。 Ni系耐腐蚀合金含有15质量％以上且50质量％以下的Cr和Mo和W中的任一种或两者，其中[（Mo）+ 0.5×（W含量）]为 从1.5％以上至8.5％以下，Crx / {[Mo含量] + 0.5×[W]的含量为1.8×[％]的值为3.0以上至70.0以上， 较少，平衡是Ni和不可避免的杂质。 Fe的含量优选小于3质量％，C的含量优选为0.05质量％以下。 该合金用于构造超临界氨反应器，或者该材料涂覆在与超临界氨流体接触的表面上。 该合金对超临界氨表现出优异的耐腐蚀性，并且矿化剂加入超临界氨。 可以提高设备的安全性和可靠性，可以降低生产成本，延长设备使用寿命，降低运行成本。