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    Process of producing semiconductor layer structure
    2.
    发明授权
    Process of producing semiconductor layer structure 有权
    制造半导体层结构的工艺

    公开(公告)号：US06528337B1

    公开(公告)日：2003-03-04

    申请号：US09544982

    申请日：2000-04-07

    申请人： Satoshi Arakawa ,  Toshikazu Mukaihara ,  Nobumitsu Yamanaka ,  Akihiko Kasukawa

    发明人： Satoshi Arakawa ,  Toshikazu Mukaihara ,  Nobumitsu Yamanaka ,  Akihiko Kasukawa

    IPC分类号： H01L2100

    CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/4043 ,  H01S5/4087

    摘要： Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation.

    摘要翻译： 公开了一种从相同的量子阱结构产生发射具有多个发光波长的光的半导体层结构的方法。 层结构具有层结构，其具有位于下限光层和上光限制层之间的量子阱结构。 量子阱结构的至少一部分是具有比其它部分更短的发光波长的区域。 该区域是通过外延生长在半导体衬底上堆叠下包层，下光限制层，量子阱结构，上光限制层和具有第一导电类型的第一半导体层，并进一步堆叠 第二半导体层与第一半导体层的整个表面或第一半导体层的部分表面具有相反的导电类型。 该第二半导体层可以在形成之后被去除。

    Semiconductor optical device having a strained quantum well structure
    3.
    发明授权
    Semiconductor optical device having a strained quantum well structure 失效
    具有应变量子阱结构的半导体光学器件

    公开(公告)号：US5929462A

    公开(公告)日：1999-07-27

    申请号：US653755

    申请日：1996-05-23

    申请人： Akihiko Kasukawa ,  Michio Ohkubo ,  Nobumitsu Yamanaka

    发明人： Akihiko Kasukawa ,  Michio Ohkubo ,  Nobumitsu Yamanaka

    IPC分类号： H01L21/20 ,  H01L29/15 ,  H01L31/0352 ,  H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01L31/0304 ,  H01L29/205 ,  H01L31/036

    CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01L31/035236 ,  H01S5/343 ,  H01S5/3407

    摘要： A semiconductor laser has a multiple-quantum well (MQW) structure overlying a first III-V compound semiconductor. The MQW includes a plurality of layer combinations including a strained well layer and a strained barrier layer, which are formed in a cyclic order. An ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer. The intermediate film functions for preventing formation of mixed crystal formed between the well layer and the barrier layer, thereby improving current density threshold and other characteristics of the semiconductor laser.

    摘要翻译： 半导体激光器具有覆盖第一III-V族化合物半导体的多量子阱（MQW）结构。 MQW包括以循环顺序形成的包括应变阱层和应变势垒层的多个层组合。 由第一III-V族化合物半导体制成的具有从单原子层到十原子层的厚度的超薄中间膜介于每个应变阱层和每个应变势垒层之间。 中间膜用于防止在阱层和势垒层之间形成的混合晶体的形成，从而提高半导体激光器的电流密度阈值和其他特性。

    Semiconductor quantum well laser having a low threshold current density
    4.
    发明授权
    Semiconductor quantum well laser having a low threshold current density 失效
    具有低阈值电流密度的半导体量子阱激光器

    公开(公告)号：US5666375A

    公开(公告)日：1997-09-09

    申请号：US555472

    申请日：1995-11-08

    申请人： Noriyuki Yokouchi ,  Nobumitsu Yamanaka ,  Akihiko Kasukawa

    发明人： Noriyuki Yokouchi ,  Nobumitsu Yamanaka ,  Akihiko Kasukawa

    IPC分类号： H01C3/18 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3434 ,  H01S5/3409 ,  H01S5/34306

    摘要： The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.

    摘要翻译： 本发明产生了具有量子阱活性层的1.3μm拉伸应变量子阱激光器，该量子阱活性层可以在结构上被定义为In1-xGaxAsyP1-y，X在0.42和0.55之间，Y在0.8和0.75之间。 InGaAsP有源层需要具有1.0至1.5％的拉伸应力，并且可以在InP和GaAs之间没有任何实质相分离的情况下制造。 1.3μm拉伸应变量子阱激光器的阈值电流密度极小，小于0.2kA / cm2。 优选的拉伸应变范围在1.2至1.4％之间或其附近。

    FINE PARTICLE DISPERSION AND METHOD FOR PRODUCING FINE PARTICLE DISPERSION
    5.
    发明申请
    FINE PARTICLE DISPERSION AND METHOD FOR PRODUCING FINE PARTICLE DISPERSION 有权

    公开(公告)号：US20100113647A1

    公开(公告)日：2010-05-06

    申请号：US12309738

    申请日：2007-07-25

    申请人： Takuya Harada ,  Hidemichi Fujiwara ,  Kazuhiro Takashiba ,  Nobumitsu Yamanaka ,  Yusuke Yamada ,  Hideo Nishikubo ,  Takashi Unno

    发明人： Takuya Harada ,  Hidemichi Fujiwara ,  Kazuhiro Takashiba ,  Nobumitsu Yamanaka ,  Yusuke Yamada ,  Hideo Nishikubo ,  Takashi Unno

    IPC分类号： C08K9/04

    CPC分类号： C09D11/36 ,  B22F1/0022 ,  B22F2998/10 ,  B82Y30/00 ,  C01P2004/64 ,  C09C1/62 ,  C09C3/045 ,  C09C3/10 ,  C09D11/52 ,  H05K1/097 ,  B22F9/24 ,  B22F1/0062

    摘要： Disclosed is a fine particle dispersion which is superior in dispersibility and storage stability. Specifically disclosed is a fine particle dispersion in which a fine particle (P) comprised of one type or not less than two types of a metal, an alloy, and/or a metallic compound, having a mean particle diameter of between 1 nm and 150 nm for primary particles thereof, with being coated at least a part of a surface thereof with a polymer dispersing agent (D), is dispersed in a mixed organic solvent. This fine particle dispersion is characterized in that a weight ratio of (D/P) between the polymer dispersing agent (D) coating the surface of the fine particle (P) and the fine particles (P) in the dispersion is between 0.001 and 10, and the mixed organic solvent is one of: (i) a mixed organic solvent which contains an organic solvent (A) as between 50% and 95% by volume having an amide group, and a low boiling point organic solvent (B) as between 5% and 50% by volume having a boiling point of between 20° C. and 100° C. at a normal pressure; (ii) a mixed organic solvent which contains the organic solvent (A) as between 50% and 95% by volume having the amide group, and an organic solvent (C) as between 5% and 50% by volume having a boiling point of higher than 100° C. at a normal pressure and comprised of an alcohol and/or a polyhydric alcohol having one or not less than two hydroxyl groups in a molecule thereof; or (iii) a mixed organic solvent which contains the organic solvent (A) as between 50% and 94% by volume having the amide group, the low boiling point organic solvent (B) as between 5% and 49% by volume having the boiling point of between 20° C. and 100° C. at the normal pressure, and the organic solvent (C) as between 1% and 45% by volume having the boiling point of higher than 100° C. at the normal pressure and comprised of the alcohol and/or the polyhydric alcohol having the one or not less than the two hydroxyl groups in the molecule thereof.