Complex shaped fiber for particle and molecular filtration
    2.
    发明授权
    Complex shaped fiber for particle and molecular filtration 有权
    用于颗粒和分子过滤的复合纤维

    公开(公告)号:US06296821B1

    公开(公告)日:2001-10-02

    申请号:US09422039

    申请日:1999-10-12

    IPC分类号: C01C110

    摘要: An ultra-efficient multilobal cross-sectioned fiber filter for chemical contaminant filtering applications is described. An absorptive chemically reactive reagent, preferably an acid or base and in liquid or an adsorptive chemically reactive reagent (an acid or base) in solid form, is disposed within longitudinal slots in each length of fiber. The reagent may be used alone or in conjunction with solid adsorptive particles which may also be utilized with the reagents in the longitudinal slots within the fibers. Reagents within the fibers remain exposed to a base-contaminated airstream passing through the filter. Base contaminants in the airstream, chemicals such as ammonium and amines (as well as particles), react with the acid reagent within the longitudinal slots of the fibers. As the contaminant and reagent react, the ammonium or amine becomes irreversibly absorbed (or adsorbed if reagent is a solid acid) to the liquid acid reagent and multilobal fiber.

    摘要翻译: 描述了一种用于化学污染物过滤应用的超高效多叶横截面纤维过滤器。 吸收性化学反应试剂,优选酸或碱,以及固体形式的液体或吸附性化学反应试剂(酸或碱),设置在纤维长度上的纵向槽内。 试剂可以单独使用或与固体吸附颗粒结合使用,固体吸附颗粒也可以与纤维内的纵向槽中的试剂一起使用。 纤维内的试剂保持暴露于通过过滤器的受基底污染的气流。 气流中的基础污染物,诸如铵和胺(以及颗粒)的化学物质与纤维的纵向槽内的酸试剂反应。 当污染物和试剂反应时,铵或胺会变得不可逆地吸收(或者如果试剂是固体酸被吸附)到液体酸试剂和多叶纤维。

    Methods for chemical mechanical polish of organic polymer dielectric
films
    8.
    发明授权
    Methods for chemical mechanical polish of organic polymer dielectric films 失效
    有机聚合物电介质薄膜的化学机械抛光方法

    公开(公告)号:US6153525A

    公开(公告)日:2000-11-28

    申请号:US023415

    申请日:1998-02-13

    摘要: A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films. A cured, globally planarized, polymeric dielectric thin film is produced on a semiconductor substrate by (a) depositing a polymeric, dielectric film composition onto a surface of a semiconductor substrate; (b) partially curing the deposited film; (c) performing a chemical mechanical polishing step to said partially cured dielectric film, until said dielectric film is substantially planarized; and (d) subjecting the polished film to an additional curing step. Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate. A thermal treatment partially cures the polymer. A chemical mechanical polishing step achieves global planarization. Another thermal treatment accomplishes a final cure of the polymer. In this way, the chemical mechanical polishing removal rate is increased compared to the removal rate for a fully cured polymer film.

    摘要翻译: 用于在半导体衬底上形成和平坦化聚合物介电膜并在平坦化这些膜时实现高化学机械抛光去除速率的方法。 通过(a)将聚合物电介质膜组合物沉积到半导体衬底的表面上,在半导体衬底上产生固化的全局平面化的聚合物电介质薄膜; (b)部分固化沉积膜; (c)对所述部分固化的电介质膜进行化学机械抛光步骤,直到所述电介质膜基本平坦化; 和(d)对经抛光的膜进行另外的固化步骤。 优选的电介质膜是通过旋涂法沉积到半导体衬底上的聚亚芳基醚和/或氟化聚亚芳基醚聚合物。 热处理部分固化聚合物。 化学机械抛光步骤实现全局平坦化。 另一种热处理完成聚合物的最终固化。 以这种方式,与完全固化的聚合物膜的去除速率相比,化学机械抛光去除速率增加。