公开(公告)号：US20050184309A1

公开(公告)日：2005-08-25

申请号：US11107485

申请日：2005-04-14

申请人： Nguyen Nguyen ,  Paul Hashimoto ,  Chanh Nguyen

发明人： Nguyen Nguyen ,  Paul Hashimoto ,  Chanh Nguyen

IPC分类号： H01L21/285 ,  H01L21/337 ,  H01L29/20 ,  H01L29/45 ,  H01L31/0328

CPC分类号： H01L29/66924 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452

摘要： A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic contacts. The field-effect transistor comprises a layered semiconductor structure which includes a first group III nitride compound semiconductor layer doped with a charge carrier, and a second group III nitride compound semiconductor layer positioned below the first layer, to generate an electron gas in the structure. After the heating step the ohmic contacts communicate with the electron gas. As a result, an excellent ohmic contact to the channel of the transistor is obtained.

公开(公告)号：US07470941B2

公开(公告)日：2008-12-30

申请号：US10313374

申请日：2002-12-06

申请人： Miroslav Micovic ,  Mike Antcliffe ,  Tahir Hussain ,  Paul Hashimoto

发明人： Miroslav Micovic ,  Mike Antcliffe ,  Tahir Hussain ,  Paul Hashimoto

IPC分类号： H01L31/0328

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/7787

摘要： A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.

摘要翻译： 提出了一种用于制造异质结场效应晶体管（HFET）和一系列HFET层结构的方法。 在该方法中，执行将HFET半导体结构沉积到衬底上的步骤。 接下来，沉积光致抗蚀剂材料。 对应于源极和漏极焊盘对，去除部分光致抗蚀剂材料。 金属层沉积在结构上，形成源极焊盘和漏极焊盘对。 去除光致抗蚀剂材料，将其暴露于不同于源极和漏极焊盘对的区域中。 每个源极和漏极焊盘对具有相应的曝光区域。 该结构进行退火，并且器件是电隔离的。 蚀刻每个器件的暴露面积以形成栅极凹部，并且在凹部中形成栅极结构。 还提出了用于GaN / AlGaN HFET的半导体层结构。

公开(公告)号：US06852615B2

公开(公告)日：2005-02-08

申请号：US10457506

申请日：2003-06-09

申请人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Janna Ruth Duvall

发明人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Janna Ruth Duvall

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/417 ,  H01L29/45 ,  H10L21/338

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/41725 ,  Y10S438/975 ,  Y10S438/978

摘要： A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HEMTs using a novel two step resist process to fabricate the ohmic contacts are described. This novel two-step process consists of depositing a plurality of layers having compounds of Group III V elements on a substrate; patterning and depositing a first photoresist on one of the layers; etching recessed areas into this layer; depositing ohmic metals on the recessed areas; removing the first photoresist; patterning and depositing a second photoresist, smaller in profile than the first photoresist, on the layer; depositing more ohmic metal on the layer allowing for complete coverage of the recessed areas; removing the second photoresist, and annealing the semiconductor structure.

摘要翻译： 在使用诸如氮化镓的复合衬底的高电子迁移率晶体管（HEMT）中形成欧姆接触的工艺及相关产品。 描述了使用新颖的两步抗蚀剂工艺制造欧姆接触的改进的器件和用于制造对GaN / AlGaN HEMT的欧姆接触的工艺的改进。 这种新型的两步法包括在基片上沉积多层具有IIIV族元素化合物的层; 在其中一层上图案化和沉积第一光致抗蚀剂; 将凹陷区域蚀刻到该层中; 在凹陷区域沉积欧姆金属; 去除第一光致抗蚀剂; 在该层上图案化和沉积比第一光致抗蚀剂更小的第二光致抗蚀剂; 在该层上沉积更多的欧姆金属，允许完全覆盖凹陷区域; 去除第二光致抗蚀剂，并退火半导体结构。

公开(公告)号：US06897137B2

公开(公告)日：2005-05-24

申请号：US10600521

申请日：2003-06-19

申请人： Nguyen Xuan Nguyen ,  Paul Hashimoto ,  Chanh N. Nguyen

发明人： Nguyen Xuan Nguyen ,  Paul Hashimoto ,  Chanh N. Nguyen

IPC分类号： H01L21/285 ,  H01L21/337 ,  H01L29/20 ,  H01L29/45 ,  H01L21/28

CPC分类号： H01L29/66924 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452

摘要： A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic contacts. The field-effect transistor comprises a layered semiconductor structure which includes a first group III nitride compound semiconductor layer doped with a charge carrier, and a second group III nitride compound semiconductor layer positioned below the first layer, to generate an electron gas in the structure. After the heating step the ohmic contacts communicate with the electron gas. As a result, an excellent ohmic contact to the channel of the transistor is obtained.

摘要翻译： 一种用于在场效应晶体管中制造欧姆接触的工艺包括以下步骤：在半导体层中减薄形成凹陷部分的半导体层; 在凹部上沉积欧姆接触; 并加热沉积的欧姆接触。 场效应晶体管包括层状半导体结构，其包括掺杂有电荷载流子的第一III族氮化物化合物半导体层和位于第一层下方的第二III族氮化物化合物半导体层，以在该结构中产生电子气。 在加热步骤之后，欧姆接触与电子气体连通。 结果，获得了对晶体管的沟道的极好的欧姆接触。

公开(公告)号：US06830945B2

公开(公告)日：2004-12-14

申请号：US10386960

申请日：2003-03-12

申请人： Jeong Sun Moon ,  Paul Hashimoto ,  Wah S. Wong ,  David E. Grider

发明人： Jeong Sun Moon ,  Paul Hashimoto ,  Wah S. Wong ,  David E. Grider

IPC分类号： H01L2100

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L21/30612 ,  H01L29/2003 ,  H01L29/7787

摘要： A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.

摘要翻译： 公开了使用具有一致的可重复结果的III族氮化物材料制造非平面异质结构场效应晶体管的方法。 该方法提供其上沉积至少一层半导体材料的衬底。 AlN层沉积在至少一层半导体材料上。 使用溶剂去除一部分AlN层以产生具有一致和可重复结果的非平面区域。 AlN层下面的至少一层不溶于溶剂，因此用作蚀刻停止层，防止对AlN层下面的至少一层的任何损坏。 此外，如果AlN层由于反应离子蚀刻而导致任何表面损伤，则当暴露于溶剂以形成非平面区域时，损伤将被去除。

公开(公告)号：US07700974B2

公开(公告)日：2010-04-20

申请号：US11107485

申请日：2005-04-14

申请人： Nguyen Xuan Nguyen ,  Paul Hashimoto ,  Chanh H. Nguyen

发明人： Nguyen Xuan Nguyen ,  Paul Hashimoto ,  Chanh H. Nguyen

IPC分类号： H01L29/778

CPC分类号： H01L29/66924 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452

摘要： A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic contacts. The field-effect transistor comprises a layered semiconductor structure which includes a first group III nitride compound semiconductor layer doped with a charge carrier, and a second group III nitride compound semiconductor layer positioned below the first layer, to generate an electron gas in the structure. After the heating step the ohmic contacts communicate with the electron gas. As a result, an excellent ohmic contact to the channel of the transistor is obtained.

摘要翻译： 一种用于在场效应晶体管中制造欧姆接触的工艺包括以下步骤：在半导体层中减薄形成凹陷部分的半导体层; 在凹部上沉积欧姆接触; 并加热沉积的欧姆接触。 场效应晶体管包括层状半导体结构，其包括掺杂有电荷载流子的第一III族氮化物化合物半导体层和位于第一层下方的第二III族氮化物化合物半导体层，以在该结构中产生电子气。 在加热步骤之后，欧姆接触与电子气体连通。 结果，获得了对晶体管的沟道的极好的欧姆接触。

公开(公告)号：US07098490B2

公开(公告)日：2006-08-29

申请号：US10832691

申请日：2004-04-26

申请人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Peter W. Deelman

发明人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Peter W. Deelman

IPC分类号： H01L29/772

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7787

摘要： The present invention provides a GaN based DHFET that helps confine the 2DEG to the channel layer, and reduces the 2DHG. The present invention provides a GaN DHFET having a channel layer comprising GaN and a buffer layer comprising AlxGa1−xN. The Al content in the buffer layer is specifically chosen based on the thickness of the channel layer using a graph. By choosing the Al content in the buffer layer and thickness of the channel layer in accordance with the graph provided in the present invention, the ability of the buffer layer to help confine the 2DEG to the channel layer is improved.

摘要翻译： 本发明提供了一种GaN基DHFET，其帮助将2DEG限制到沟道层，并且减少2DHG。 本发明提供了具有包含GaN的沟道层和包括Al x Ga 1-x N的缓冲层的GaN DHFET。 缓冲层中的Al含量是使用图表基于沟道层的厚度特别选择的。 通过根据本发明提供的图来选择缓冲层中的Al含量和沟道层的厚度，缓冲层有助于将2DEG限制到沟道层的能力得到改善。

公开(公告)号：US06884704B2

公开(公告)日：2005-04-26

申请号：US10634348

申请日：2003-08-04

申请人： Tahir Hussain ,  Miroslav Micovic ,  Paul Hashimoto ,  Gary Peng ,  Ara K. Kurdoghlian

发明人： Tahir Hussain ,  Miroslav Micovic ,  Paul Hashimoto ,  Gary Peng ,  Ara K. Kurdoghlian

IPC分类号： H01L21/24 ,  H01L21/285 ,  H01L21/335 ,  H01L21/337 ,  H01L29/20 ,  H01L29/45 ,  H01L21/48 ,  H01L21/38

CPC分类号： H01L29/66462 ,  H01L21/24 ,  H01L21/242 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66924

摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.

摘要翻译： 说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。 封装层用于覆盖通道和欧姆金属触点。 本发明提供一种其上沉积有多个半导体层的衬底。 半导体层用作器件的通道。 半导体层被封装层覆盖。 去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。 然后将欧姆金属触点退火以帮助降低其电阻。 封装层确保在退火步骤期间欧姆金属触点不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

公开(公告)号：US08030688B2

公开(公告)日：2011-10-04

申请号：US12486686

申请日：2009-06-17

申请人： Tahir Hussain ,  Miroslav Micovic ,  Paul Hashimoto ,  Gary Peng ,  Ara K. Kurdoghlian

发明人： Tahir Hussain ,  Miroslav Micovic ,  Paul Hashimoto ,  Gary Peng ,  Ara K. Kurdoghlian

IPC分类号： H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/24 ,  H01L21/242 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66924

摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.

摘要翻译： 说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。 封装层用于覆盖通道和欧姆金属触点。 本发明提供一种其上沉积有多个半导体层的衬底。 半导体层用作器件的通道。 半导体层被封装层覆盖。 去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。 然后将欧姆金属触点退火以帮助降低它们的电阻。 封装层确保在退火步骤期间欧姆金属接触不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

公开(公告)号：US07598131B1

公开(公告)日：2009-10-06

申请号：US12290921

申请日：2008-11-05

申请人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Mike Antcliffe

发明人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Mike Antcliffe

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/7787

摘要： A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.

摘要翻译： 提出了一种用于制造异质结场效应晶体管（HFET）和一系列HFET层结构的方法。 在该方法中，执行将HFET半导体结构沉积到衬底上的步骤。 接下来，沉积光致抗蚀剂材料。 对应于源极和漏极焊盘对，去除部分光致抗蚀剂材料。 金属层沉积在结构上，形成源极焊盘和漏极焊盘对。 去除光致抗蚀剂材料，将其暴露于不同于源极和漏极焊盘对的区域中。 每个源极和漏极焊盘对具有相应的曝光区域。 该结构进行退火，并且器件是电隔离的。 蚀刻每个器件的暴露面积以形成栅极凹部，并且在凹部中形成栅极结构。 还提出了用于GaN / AlGaN HFET的半导体层结构。