公开(公告)号：US5107538A

公开(公告)日：1992-04-21

申请号：US711243

申请日：1991-06-06

申请人： Janet L. Benton ,  Dale C. Jacobson ,  Lionel C. Kimerling ,  Jurgen Michel ,  John M. Poate

发明人： Janet L. Benton ,  Dale C. Jacobson ,  Lionel C. Kimerling ,  Jurgen Michel ,  John M. Poate

IPC分类号： G02B6/12 ,  G02F1/35 ,  H01L33/00 ,  H01L33/34 ,  H01S3/10 ,  H01S3/16 ,  H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/50

CPC分类号： H01L33/343 ,  H01S5/50 ,  H01S3/1603 ,  H01S3/1608 ,  H01S3/1628 ,  H01S5/3068

摘要： It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or systems according to the invention comprise a device (e.g., laser, optical ampifier, LED) that comprises a planar waveguide whose core region contains, in addition to at least 90 atomic % Si or SiGe alloy, Er, Pr and/or Nd, and further contains C, N and/or F, and preferably also contains oxygen. Currently preferred apparatus or systems according to the invention comprise means for electrically pumping the waveguide means.

公开(公告)号：US4234358A

公开(公告)日：1980-11-18

申请号：US27274

申请日：1979-04-05

申请人： George K. Celler ,  Lionel C. Kimerling ,  Harry J. Leamy ,  John M. Poate ,  George A. Rozgonyi

发明人： George K. Celler ,  Lionel C. Kimerling ,  Harry J. Leamy ,  John M. Poate ,  George A. Rozgonyi

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/26

CPC分类号： H01L21/268 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02694 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/09 ,  Y10S148/093

摘要： A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.

摘要翻译： 描述了从结晶层去除缺陷和紊乱以及这些层的外延再生长的技术。 该技术涉及在材料的有限空间区域上沉积短期的能量脉冲，从而退火另外损坏的材料并使其外延再生。 在短期能量沉积之后，在邻接和重叠的区域上顺序地进行类似的处理，使得模式最终被“写入”。 该图案形成基本单晶材料的连续区域。

公开(公告)号：US5039190A

公开(公告)日：1991-08-13

申请号：US579118

申请日：1990-09-07

申请人： Greg E. Blonder ,  Dale C. Jacobson ,  Rodney C. Kistler ,  John M. Poate ,  Albert Polman

发明人： Greg E. Blonder ,  Dale C. Jacobson ,  Rodney C. Kistler ,  John M. Poate ,  Albert Polman

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/26 ,  G02F1/35 ,  H01S3/063

CPC分类号： G02B6/122 ,  G02B6/1228 ,  G02B6/262 ,  H01S3/063 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12188

摘要： Disclosed is apparatus comprising an optically pumped optical gain device that comprises a rare earth (RE)-doped planar waveguide with non-uniform dopant distribution in the core of the waveguide. The RE ions are advantageously distributed such that the ions are concentrated in a core region in which the mode intensity of both signal radiation and pump radiation is relatively high. In preferred embodiments of a single mode planar waveguide according to the invention the RE ions are substantially concentrated in the central core region. A method of making the disclosed apparatus is also disclosed. The method involves implantation of RE ions into the core region.

公开(公告)号：US5249195A

公开(公告)日：1993-09-28

申请号：US906910

申请日：1992-06-30

申请人： Leonard C. Feldman ,  Neil E. J. Hunt ,  Dale C. Jacobson ,  John M. Poate ,  Erdmann F. Schubert ,  Arjen M. Vredenberg ,  Yiu-Huen Wong ,  George J. Zydzik

发明人： Leonard C. Feldman ,  Neil E. J. Hunt ,  Dale C. Jacobson ,  John M. Poate ,  Erdmann F. Schubert ,  Arjen M. Vredenberg ,  Yiu-Huen Wong ,  George J. Zydzik

IPC分类号： H01S3/05 ,  H01S3/06 ,  H01S3/16 ,  H01S3/17 ,  H01S5/183

CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/1608 ,  H01S3/1628 ,  H01S3/176 ,  H01S3/177

摘要： This invention embodies an optical device with a Fabry-Perot cavity formed by two reflective mirrors and an active layer which is doped with a rare earth element selected from lanthanide series elements with number 57 through 71. The thickness of the active layer being a whole number multiple of .lambda./2 wherein .lambda. is the operating, or emissive, wavelength of the device, said whole number being one of the numbers ranging from 1 to 5, the fundamental mode of the cavity being in resonance with the emission wavelength of said selected rare earth element. Cavity-quality factors exceeding Q=300 and finesses of 73 are achieved with structures consisting of two Si/SiO.sub.2 distributed Bragg reflector (DBR) mirrors and an Er-implanted (.lambda./2) SiO.sub.2 active region. The bottom DBR mirror consists of four pairs and the upper DBR mirror consists of two-and-a half pairs of quarterwave (.lambda./4) layers of Si and SiO.sub.2. Photoluminescence at room temperature reveals a drastic enhancement of the luminescence intensity of the cavity emitted along the optical axis of the cavity versus the luminescence without the top mirror. The luminescence intensity of the cavity is typically 1-2 orders of magnitudes higher as compared to structures without a cavity. Furthermore, since the emission wavelength and the intensity decrease for off-normal emission angles, the change in emission wavelength can be quantitatively described by assuming that the on-axis component of the optical wave is resonant with the cavity.

公开(公告)号：US4555301A

公开(公告)日：1985-11-26

申请号：US506069

申请日：1983-06-20

申请人： John M. Gibson ,  Dale C. Jacobson ,  John M. Poate ,  Raymond T. Tung

发明人： John M. Gibson ,  Dale C. Jacobson ,  John M. Poate ,  Raymond T. Tung

IPC分类号： C30B1/02 ,  C30B11/00 ,  C30B11/02 ,  C30B13/00 ,  C30B13/24 ,  C30B23/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/208 ,  H01L21/285 ,  C30B1/08

CPC分类号： H01L21/28518 ,  C30B11/00 ,  C30B13/00 ,  C30B13/24 ,  C30B29/10 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/14

摘要： A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e.g., nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi.sub.2 on Si(100).

摘要翻译： 一种用于在衬底上形成包含多取向外延材料的异质结构的方法包括在衬底上形成“前体”层的材料，并通过脉冲照射瞬时熔融前体材料。 前体材料具有与待形成的多成分材料相同的主要化学成分，尽管不一定是相同的比例。 在至少一些系统（例如，Si上的镍或钴硅化物）中，再固化材料的固态退火常常改善所形成的外延材料的质量，导致基本上无缺陷的基本单晶材料。 本发明方法的示例性应用是在Si（100）上形成单晶外延NiSi 2。

公开(公告)号：US4477308A

公开(公告)日：1984-10-16

申请号：US429291

申请日：1982-09-30

申请人： John M. Gibson ,  John M. Poate ,  Raymond T. Tung

发明人： John M. Gibson ,  John M. Poate ,  Raymond T. Tung

IPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  C30B23/06

CPC分类号： H01L21/28518 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02658

摘要： The method for growing heteroepitaxial multiconstituent material on a substrate comprises deposition of a thin disordered layer of a "template-forming" material, i.e., material containing at least one constituent of the multiconstituent material to be grown, and differing in chemical composition from at least the substrate material, on the substrate surface at a relatively low deposition temperature, raising the substrate temperature to an intermediate transformation temperature, thereby causing the template-forming material to undergo a reaction that results in formation of "template" material, typically material having substantially the same composition as the multiconstituent material to be grown. Onto the thus formed template layer is then deposited the material for the epitaxial multiconstituent layer. This general process is exemplified by the growth of NiSi.sub.2 on a Si substrate, by first depositing at room temperature about 18.ANG. of Ni (the template-forming material), onto an atomically clean and undamaged Si(111) surface, heating the substrate to about 500.degree. C. for about 4 minutes (thereby reacting the Ni with Si from the substrate to form template material), followed by deposition, onto the now template-covered substrate, of about 250.ANG. of Ni at a rate of about 2.ANG./sec, with the (template-covered) substrate maintained at about 775.degree. C. The inventive method has wide applicability, and permits, inter alia, growth of essentially perfect epitaxial CoSi.sub.2 or NiSi.sub.2 on Si(100). Material grown by the method can be in form of an essentially continuous layer or a patterned layer, and can serve as the substrate for the growth thereon of further epitaxial material of different chemical composition.

摘要翻译： 用于在衬底上生长异质外延多构成材料的方法包括沉积“模板形成”材料的薄无序层，即，包含至少一种待成长的多构成材料的成分的材料，并且化学组成不同于至少 衬底材料，在相对低的沉积温度下在衬底表面上，将衬底温度升高到中间转变温度，从而导致模板形成材料经历导致形成“模板”材料的反应，通常材料具有基本上 与要生长的多成分材料相同的组成。 然后在这样形成的模板层上沉积外延多成像层的材料。 该通用方法的例子是在Si衬底上NiSi2的生长，首先在室温下沉积约18安培的Ni（模板形成材料）到原子清洁和未损坏的Si（111）表面上，将衬底加热至 约500℃约4分钟（从而使Ni与来自衬底的Si反应形成模板材料），然后以大约2安培的速率沉积到现在的模板覆盖的衬底上约为250埃的Ni /（模板覆盖）衬底保持在约775℃。本发明的方法具有广泛的适用性，并且尤其允许在Si（100）上生长基本上完美的外延CoSi 2或NiSi 2。 通过该方法生长的材料可以是基本上连续的层或图案化层的形式，并且可以用作其上生长具有不同化学组成的另外的外延材料的衬底。

公开(公告)号：US4554045A

公开(公告)日：1985-11-19

申请号：US445014

申请日：1982-11-29

申请人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

发明人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

IPC分类号： H01L29/267 ,  H01L29/76 ,  H01L29/872 ,  C30B25/14

CPC分类号： H01L29/872 ,  H01L29/267 ,  H01L29/7606 ,  Y10S117/905

摘要： Described is a method for producing semiconductor heterostructures incorporating a metal layer. The metal layer, typically a metal-silicide, can be produced by, e.g., co-deposition or reaction with the substrate. The resulting silicide is typically epitaxial and of high crystalline perfection.

摘要翻译： 描述了一种用于制造并入金属层的半导体异质结构的方法。 金属层，通常为金属硅化物，可以通过例如共沉积或与基底反应来制备。 所得到的硅化物通常是外延和高结晶完整性。

公开(公告)号：US4492971A

公开(公告)日：1985-01-08

申请号：US156649

申请日：1980-06-05

申请人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

发明人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

IPC分类号： H01L29/267 ,  H01L29/76 ,  H01L29/872 ,  H01L29/48

CPC分类号： H01L29/267 ,  H01L29/7606 ,  H01L29/872

摘要： Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detailed, and hot electron devices using this structure are analyzed briefly.

摘要翻译： 描述了结合有金属层的半导体异质结构。 描述了基于异质结构的器件，以及用于制备异质结构的技术。 详细描述金属层是金属硅化物的具体实施方案，并简要分析使用该结构的热电子器件。

公开(公告)号：US4495255A

公开(公告)日：1985-01-22

申请号：US202290

申请日：1980-10-30

申请人： Clifton W. Draper ,  John M. Poate

发明人： Clifton W. Draper ,  John M. Poate

IPC分类号： B23K35/30 ,  C23C26/02 ,  H01H1/023 ,  H05K3/24 ,  C23C5/00 ,  B05D3/06 ,  B23K9/00 ,  B32B15/00

CPC分类号： C23C26/02 ,  B23K35/3013 ,  H01H1/023 ,  H05K3/244 ,  Y10T29/49213 ,  Y10T428/12868 ,  Y10T428/12889 ,  Y10T428/12944

摘要： A very thin gold coating (e.g., 270 to 3,500 Angstroms) is vapor deposited on the surface of a nickel substrate. A short radiant energy pulse from a laser having a pulse length of about 130 nanoseconds is directed at the coated surface to melt portions of the gold coating and the nickel substrate therebelow. The energy pulse is removed to permit the melted material to resolidify as an alloy with a high concentration of gold at the surface thereof.

摘要翻译： 在镍基底的表面上气相沉积非常薄的金涂层（例如270至3,500埃）。 来自具有大约130纳秒的脉冲长度的激光器的短辐射能脉冲指向涂覆的表面以熔化金涂层和其下的镍基底的部分。 消除能量脉冲以允许熔化的材料在其表面上以高浓度的金作为合金重新固化。

公开(公告)号：US5363398A

公开(公告)日：1994-11-08

申请号：US129528

申请日：1993-09-30

申请人： Alastair M. Glass ,  Neil E. J. Hunt ,  John M. Poate ,  Erdmann F. Schubert ,  George J. Zydzik

发明人： Alastair M. Glass ,  Neil E. J. Hunt ,  John M. Poate ,  Erdmann F. Schubert ,  George J. Zydzik

IPC分类号： H01S5/00 ,  C09K11/00 ,  G21K1/00 ,  H01S3/063 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/17 ,  H01S5/04 ,  H01S3/08

CPC分类号： C09K11/7706 ,  G21K1/00 ,  H01S3/0635 ,  H01S3/0941 ,  H01S3/1608 ,  H01S3/1628 ,  H01S3/176 ,  H01S5/041

摘要： Absorption properties of an optically active medium can be changed drastically by a Fabry-Perot microcavity. Optically active medium of the cavity includes a host material which is not optically active and at least one rare earth ion which provides optical activity to the medium. The Fabry-Perot cavity is designed to be resonant with excitation wavelength of an absorption band of the host material. The excitation is provided by a source of radiation positioned such that the radiation impinges on the cavity at an angle within a range of from zero to less than 90 degrees from the normal to the top surface of the cavity. In one embodiment Er-implanted SiO.sub.2 is used as the optically active medium. SiO.sub.2 :Er has an absorption band at 980 nm and an emission band at 1.55 .mu.m due to 4f intra-atomic transitions of Er.sup.3+ ions. The Fabry-Perot cavity is designed to be resonant with the 980 nm absorption band of SiO.sub.2 :Er. The efficiency of the cavity structure is much higher as compared to a no-cavity structure, while the spectral features of the active SiO.sub.2 :Er emission are unaltered. The structure can be used for optically pumped semiconductor devices, such as optical amplifiers or lasers, which could be operated with a higher overall efficiency.

摘要翻译： 光学活性介质的吸收特性可以通过法布里 - 珀罗微腔显着改变。 空腔的光学活性介质包括不具有光学活性的主体材料和向介质提供光学活性的至少一种稀土离子。 法布里 - 珀罗腔被设计成与主体材料的吸收带的激发波长共振。 激发由辐射源提供，定位成使得辐射以与从空腔的顶表面的法向到零至小于90度的范围内的角度照射在空腔上。 在一个实施方案中，将Er注入的SiO 2用作光学活性介质。 SiO 2：Er具有在980nm的吸收带和1.55μm的发射带，这是由于Er 3+离子的4f的原子内跃迁。 法布里 - 珀罗腔被设计为与SiO 2：Er的980nm吸收带共振。 与无空腔结构相比，腔结构的效率高得多，而活性SiO 2：Er发射的光谱特征未改变。 该结构可用于光泵浦半导体器件，例如光放大器或激光器，其可以以更高的总体效率运行。