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    Method for forming low-k hard film
    3.
    发明授权
    Method for forming low-k hard film 有权
    低k硬膜的形成方法

    公开(公告)号：US07064088B2

    公开(公告)日：2006-06-20

    申请号：US10412363

    申请日：2003-04-11

    申请人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

    发明人： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

    摘要： A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

    摘要翻译： 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

    Method for forming low dielectric constant interlayer insulation film
    4.
    发明授权
    Method for forming low dielectric constant interlayer insulation film 有权
    低介电常数层间绝缘膜的形成方法

    公开(公告)号：US06759344B2

    公开(公告)日：2004-07-06

    申请号：US10309401

    申请日：2002-12-03

    申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

    发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

    IPC分类号： H01L2131

    CPC分类号： C23C16/45523 ,  C23C16/401

    摘要： An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

    摘要翻译： 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

    Method of forming carbon polymer film using plasma CVD
    6.
    发明授权
    Method of forming carbon polymer film using plasma CVD 有权
    使用等离子体CVD形成碳聚合物膜的方法

    公开(公告)号：US07410915B2

    公开(公告)日：2008-08-12

    申请号：US11387527

    申请日：2006-03-23

    申请人： Yoshinori Morisada ,  Kamal Kishore Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Tae Na ,  Eun Kyung Baek

    发明人： Yoshinori Morisada ,  Kamal Kishore Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Tae Na ,  Eun Kyung Baek

    IPC分类号： H01L21/469 ,  H01L23/58

    CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

    摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

    摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。

    Method of forming carbon polymer film using plasma CVD
    7.
    发明申请
    Method of forming carbon polymer film using plasma CVD 有权
    使用等离子体CVD形成碳聚合物膜的方法

    公开(公告)号：US20070224833A1

    公开(公告)日：2007-09-27

    申请号：US11387527

    申请日：2006-03-23

    申请人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

    发明人： Yoshinori Morisada ,  Kamal Goundar ,  Masashi Yamaguchi ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

    IPC分类号： C23C16/00 ,  H01L21/31

    CPC分类号： H01L21/31144 ,  B05D1/62 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/32139

    摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

    摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体和CO 2气体或H 2 H 2气体引入到其中放置基底的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜，从而降低193nm处的消光系数（k）并提高机械硬度。

    Plasma CVD film formation apparatus provided with mask
    8.
    发明申请
    Plasma CVD film formation apparatus provided with mask 审中-公开
    设置有掩模的等离子体CVD膜形成装置

    公开(公告)号：US20070065597A1

    公开(公告)日：2007-03-22

    申请号：US11227525

    申请日：2005-09-15

    申请人： Shintaro Kaido ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

    发明人： Shintaro Kaido ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Nobuo Matsuki ,  Kyu Na ,  Eun Baek

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/5096 ,  C23C16/042 ,  H01J37/32623

    摘要： A plasma CVD apparatus for forming a thin film on a wafer having diameter Dw and thickness Tw, includes: a vacuum chamber; a shower plate; a top plate; a top mask portion for covering a top surface peripheral portion of the wafer; and a side mask portion for covering a side surface portion of the wafer. The side mask portion has an inner diameter of Dw+α, and the top mask portion is disposed at a clearance of Tw+β between a bottom surface of the top mask portion and a wafer-supporting surface of the top plate, wherein α is more than zero, and β is more than zero.

    摘要翻译： 在具有直径Dw和厚度Tw的晶片上形成薄膜的等离子体CVD装置包括：真空室; 淋浴板 顶板 用于覆盖晶片的顶表面周边部分的顶部掩模部分; 以及用于覆盖晶片的侧表面部分的侧面掩模部分。 侧面罩部分具有Dw +α的内径，并且顶部掩模部分设置在顶部掩模部分的底表面和顶板的晶片支承表面之间的Tw +β间隙处，其中α是 超过零，beta超过零。

    Plasma CVD film-forming device
    9.
    发明授权
    Plasma CVD film-forming device 有权
    等离子体CVD成膜装置

    公开(公告)号：US06740367B2

    公开(公告)日：2004-05-25

    申请号：US10328331

    申请日：2002-12-23

    申请人： Nobuo Matsuki ,  Yoshinori Morisada

    发明人： Nobuo Matsuki ,  Yoshinori Morisada

    IPC分类号： H05H102

    CPC分类号： H01J37/32009 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32541

    摘要： A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.

    摘要翻译： 等离子体CVD膜形成装置以这样的方式在半导体衬底上形成膜，使得薄膜的膜质量和膜厚变得均匀。 用于在半导体衬底上形成薄膜的等离子体CVD膜形成装置包括真空室，位于真空室内的喷头和基本上平行于并面向真空室内的喷头的基座， 装载物体，喷头和/或基座的中心部分构成凹面电极。

    Siloxan polymer film on semiconductor substrate and method for forming same
    10.
    发明授权
    Siloxan polymer film on semiconductor substrate and method for forming same 有权
    半导体衬底上的硅氧烷聚合物膜及其形成方法

    公开(公告)号：US06514880B2

    公开(公告)日：2003-02-04

    申请号：US09827616

    申请日：2001-04-06

    申请人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

    发明人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

    IPC分类号： H01L21469

    CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

    摘要： A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

    摘要翻译： 硅氧烷聚合物绝缘膜的介电常数为3.1以下，具有C原子浓度为20％以下的-SiR 2 O重复结构单元。 硅氧烷聚合物还具有高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发式SialphaOalpha-1R2alpha-β+ 2（OCnH2n + 1）β的含硅烃化合物形成，其中α为1-3的整数，β为2，n为整数1 -3，R是与Si连接的C 1-6烃，然后将蒸发的化合物与氧化剂一起引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。