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公开(公告)号：US20060084280A1
公开(公告)日：2006-04-20
申请号：US11172031
申请日：2005-06-30
申请人： Nobuo Matsuki , Yoshinori Morisada , Seijiro Umemoto , Jea Lee
发明人： Nobuo Matsuki , Yoshinori Morisada , Seijiro Umemoto , Jea Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/0332 , B05D1/62 , G03F7/167 , H01L21/02118 , H01L21/02274 , H01L21/3127 , H01L21/3146
摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃，其未被乙烯基或乙炔基取代; 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。
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公开(公告)号：US20070218705A1
公开(公告)日：2007-09-20
申请号：US11524037
申请日：2006-09-20
申请人： Nobuo Matsuki , Yoshinori Morisada , Seijiro Umemoto , Jea Lee
发明人： Nobuo Matsuki , Yoshinori Morisada , Seijiro Umemoto , Jea Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/02118 , B05D1/62 , G03F7/167 , H01L21/02274 , H01L21/0332 , H01L21/3127 , H01L21/3146
摘要： A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
摘要翻译： 一种方法通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜。 该方法包括以下步骤：蒸发含烃液体单体（其中α和β为自然数） 5或更大;γ是包括零的整数; X是O，N或F），其沸点为约20℃至约350℃; 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。
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公开(公告)号：US07470633B2
公开(公告)日：2008-12-30
申请号：US11524037
申请日：2006-09-20
IPC分类号： H01L21/31
CPC分类号： H01L21/02118 , B05D1/62 , G03F7/167 , H01L21/02274 , H01L21/0332 , H01L21/3127 , H01L21/3146
摘要： A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
摘要翻译： 一种方法通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜。 该方法包括以下步骤：使沸点为约1的含烃液体单体（其中α和β为5或更多的天然数;γ为包括零的整数; X为O，N或F）的烃类液体单体 20℃至约350℃。 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。
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公开(公告)号：US06784123B2
公开(公告)日：2004-08-31
申请号：US10402109
申请日：2003-03-27
IPC分类号： H01L2131
CPC分类号： B05D1/62 , C09D4/00 , C23C16/30 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/3122 , H01L23/296 , H01L2924/0002 , H01L2924/12044 , C08G77/00 , H01L2924/00
摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of −50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.
摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置，并且在-50℃-100℃的温度下通过等离子体聚合沉积硅氧烷聚合物膜。反应气体在反应空间中的停留时间通过减少反应气体的总流量而延长 以形成低介电常数例如2.5的硅氧烷聚合物膜的方式。
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公开(公告)号：US07504344B2
公开(公告)日：2009-03-17
申请号：US11172031
申请日：2005-06-30
IPC分类号： H01L21/30
CPC分类号： H01L21/0332 , B05D1/62 , G03F7/167 , H01L21/02118 , H01L21/02274 , H01L21/3127 , H01L21/3146
摘要： A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
摘要翻译： 通过电容耦合等离子体CVD装置在半导体衬底上形成含烃聚合物膜的方法。 该方法包括以下步骤：使沸点为约1的含烃液体单体（其中α和β为5或更多的天然数;γ为包括零的整数; X为O，N或F）的烃类液体单体 20℃至约350℃，其不被乙烯基或乙炔基取代; 将蒸发的气体引入其中放置基板的CVD反应室中; 并通过气体的等离子体聚合在基板上形成含烃聚合物膜。
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公开(公告)号：US06881683B2
公开(公告)日：2005-04-19
申请号：US10317239
申请日：2002-12-11
申请人： Nobuo Matsuki , Yasuyoshi Hyodo , Masashi Yamaguchi , Yoshinori Morisada , Atsuki Fukazawa , Manabu Kato , Shinya Kaneko , Devendra Kumar , Seijiro Umemoto
发明人： Nobuo Matsuki , Yasuyoshi Hyodo , Masashi Yamaguchi , Yoshinori Morisada , Atsuki Fukazawa , Manabu Kato , Shinya Kaneko , Devendra Kumar , Seijiro Umemoto
IPC分类号： B05D7/24 , C09D4/00 , C23C16/30 , C23C16/40 , H01L21/312 , H01L23/29 , H01L21/469
CPC分类号： B05D1/62 , C09D4/00 , C23C16/30 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/3122 , H01L23/296 , H01L2924/0002 , H01L2924/12044 , C08G77/00 , H01L2924/00
摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。
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公开(公告)号：US07354873B2
公开(公告)日：2008-04-08
申请号：US11465751
申请日：2006-08-18
申请人： Atsuki Fukazawa , Nobuo Matsuki , Seijiro Umemoto
发明人： Atsuki Fukazawa , Nobuo Matsuki , Seijiro Umemoto
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/401 , H01L21/02164 , H01L21/02214 , H01L21/02274 , H01L21/02348 , H01L2924/12044
摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。
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公开(公告)号：US20070004204A1
公开(公告)日：2007-01-04
申请号：US11465751
申请日：2006-08-18
申请人： Atsuki Fukazawa , Nobuo Matsuki , Seijiro Umemoto
发明人： Atsuki Fukazawa , Nobuo Matsuki , Seijiro Umemoto
CPC分类号： H01L21/31612 , C23C16/401 , H01L21/02164 , H01L21/02214 , H01L21/02274 , H01L21/02348 , H01L2924/12044
摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。
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公开(公告)号：US06537928B1
公开(公告)日：2003-03-25
申请号：US10079078
申请日：2002-02-19
申请人： Nobuo Matsuki , Seijiro Umemoto , Yasuyoshi Hyodo
发明人： Nobuo Matsuki , Seijiro Umemoto , Yasuyoshi Hyodo
IPC分类号： H01L2131
CPC分类号： H01J37/32522 , C23C16/401 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/02359
摘要： A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.
摘要翻译： CVD设备包括（i）反应室; （ii）反应气体入口; （iii）放置半导体衬底的下层; （iv）用于等离子体激发的上电极; （v）具有反应气体通过的多个孔的中间电极，其中在上部电极和中间电极之间形成反应空间; 和（vi）设置在所述中间电极和所述下层之间的冷却板，其中在所述中间电极和所述冷却板之间形成过渡空间，并且在所述冷却板和所述下层之间形成无等离子体空间。
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公开(公告)号：US20060258176A1
公开(公告)日：2006-11-16
申请号：US11437951
申请日：2006-05-19
申请人： Atsuki Fukazawa , Nobuo Matsuki , Seijiro Umemoto
发明人： Atsuki Fukazawa , Nobuo Matsuki , Seijiro Umemoto
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , B05D1/62 , C09D4/00 , C23C16/30 , H01L21/02164 , H01L21/02214 , H01L21/02274 , H01L21/02348 , H01L21/3121 , H01L21/3122 , H01L21/31612 , H01L23/296 , H01L2924/0002 , H01L2924/12044 , C08G77/00 , H01L2924/00
摘要： A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
摘要翻译： 通过等离子体反应在半导体衬底上形成具有填充性能的绝缘膜的方法包括：蒸发含有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 并且通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，O，H和任选的C或N构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。
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