公开(公告)号：US20090206453A1

公开(公告)日：2009-08-20

申请号：US11884358

申请日：2006-02-15

申请人： Nobutoshi Fujii ,  Kazuo Kohmura ,  Hidenori Miyoshi ,  Hirofumi Tanaka ,  Shunsuke Oike ,  Masami Murakami ,  Takeshi Kubota ,  Yoshito Kurano

发明人： Nobutoshi Fujii ,  Kazuo Kohmura ,  Hidenori Miyoshi ,  Hirofumi Tanaka ,  Shunsuke Oike ,  Masami Murakami ,  Takeshi Kubota ,  Yoshito Kurano

IPC分类号： H01L29/00 ,  B05D7/22 ,  B32B3/26

CPC分类号： H01L21/76826 ,  C01B33/12 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31608 ,  H01L21/31695 ,  Y10T428/249994

摘要： A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a —C6H5 group) and polymerizable group (a hydrogen atom, a hydroxyl group or a halogen atom) is allowed to undergo a gas-phase polymerization reaction, under reduced pressure (of not more than 30 kPa), in the presence of a raw porous silica film and to thus form a modified porous silica film wherein a hydrophobic polymer thin film is formed on the inner walls of holes present in the raw porous silica film. The resulting porous silica film has a low relative dielectric constant and a low refractive index and the silica film is likewise improved in the mechanical strength and hydrophobicity. A semiconductor device is produced using the porous silica film.

摘要翻译： 具有疏水性基团（具有1〜6个碳原子的烷基或-C 6 H 5基团）和可聚合基团（氢原子，羟基或卤素原子）中的至少一种的疏水化合物被允许进行气 - 在减压（不大于30kPa）的条件下，在原料多孔二氧化硅膜的存在下进行相聚合反应，从而形成改性多孔二氧化硅膜，其中在存在于孔中的孔的内壁上形成疏水性聚合物薄膜 原料多孔二氧化硅膜。 所得到的多孔二氧化硅膜的相对介电常数低，折射率低，二氧化硅膜的机械强度和疏水性同样提高。 使用多孔二氧化硅膜制造半导体器件。

公开(公告)号：US08394457B2

公开(公告)日：2013-03-12

申请号：US12303240

申请日：2007-05-16

申请人： Nobutoshi Fujii ,  Takahiro Nakayama ,  Kazuo Kohmura ,  Hirofumi Tanaka

发明人： Nobutoshi Fujii ,  Takahiro Nakayama ,  Kazuo Kohmura ,  Hirofumi Tanaka

IPC分类号： B05D3/02 ,  C08J7/06 ,  B05D3/06

CPC分类号： C09D183/04 ,  C08G77/04 ,  C08G77/56 ,  C08G77/58 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/249921 ,  Y10T428/249953

摘要： Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR1)4 and a compound represented by the formula Ra(Si)(OR2)4−a (in the formulas R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.

摘要翻译： 公开了一种前体组合物，其包含：选自下式的化合物：Si（OR 1）4和由式Ra（Si）（OR 2）4-a表示的化合物（式中，R1表示一价有机基团 R表示氢原子，氟原子或一价有机基团; R 2表示一价有机基团，a表示1〜3的整数，条件是R，R 1和R 2可以相同也可以不同 ）可热降解的有机化合物; 具有催化剂活性的元素; 尿素 等等。 用紫外线照射由前体组合物制成的多孔薄膜，然后与疏水性化合物进行气相反应。 如此制备的多孔薄膜可用于制造半导体器件。

公开(公告)号：US20090186210A1

公开(公告)日：2009-07-23

申请号：US12303240

申请日：2007-05-16

申请人： Nobutoshi Fujii ,  Takahiro Nakayama ,  Kazuo Kohmura ,  Hirofumi Tanaka

发明人： Nobutoshi Fujii ,  Takahiro Nakayama ,  Kazuo Kohmura ,  Hirofumi Tanaka

IPC分类号： B32B3/26 ,  C08J7/12 ,  C09D1/00

CPC分类号： C09D183/04 ,  C08G77/04 ,  C08G77/56 ,  C08G77/58 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/249921 ,  Y10T428/249953

摘要： Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR1)4 and a compound represented by the formula Ra(Si) (OR2)4-a (in the formulas represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.

摘要翻译： 公开了一种前体组合物，其包含：选自下式的化合物：Si（OR 1）4和由式Ra（Si）（OR 2）4-a表示的化合物（在下式中表示一价有机基团; R表示氢原子，氟原子或一价有机基团; R 2表示一价有机基团，a表示1〜3的整数，条件是R，R 1和R 2可以相同或不同） 可热降解的有机化合物; 具有催化剂活性的元素; 尿素 等等。 用紫外线照射由前体组合物制成的多孔薄膜，然后与疏水性化合物进行气相反应。 如此制备的多孔薄膜可用于制造半导体器件。

公开(公告)号：US20090053503A1

公开(公告)日：2009-02-26

申请号：US11886952

申请日：2006-03-17

申请人： Nobutoshi Fujii ,  Takahiro Nakayama ,  Toshihiko Kanayama ,  Kazuo Kohmura ,  Hirofumi Tanaka

发明人： Nobutoshi Fujii ,  Takahiro Nakayama ,  Toshihiko Kanayama ,  Kazuo Kohmura ,  Hirofumi Tanaka

IPC分类号： B32B3/26 ,  C09D7/12 ,  C09D171/02 ,  B05D3/02

CPC分类号： C09D183/04 ,  C08K3/02 ,  C09D7/61 ,  H01L21/02126 ,  H01L21/02142 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  Y10T428/249953

摘要： A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR1)4 and Ra(Si)(OR2)4-a (in the formulas, R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250° C.; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.

摘要翻译： 一种多孔膜用前体组合物，其含有选自由以下通式表示的化合物中的至少一种：Si（OR 1）4和Ra（Si）（OR 2）4-a（式中，R 1表示1价 有机基团; R代表氢原子，氟原子或一价有机基团; R 2表示一价有机基团; a是1至3的整数，条件是R，R 1和R 2可以相同或不同）; 能够在不低于250℃的温度下热分解的可热分解有机化合物; 和选自由各自具有催化作用的元素组成的组中的至少一种元素和有机溶剂。 在该前体组合物的溶液存在下使疏水性化合物进行气相聚合反应，形成介电常数低，折射率低，机械强度高的疏水性多孔膜。 使用多孔膜制备的半导体器件。

公开(公告)号：US20070158013A1

公开(公告)日：2007-07-12

申请号：US11604598

申请日：2006-11-27

申请人： Yasuyoshi Hyodo ,  Kazuo Kohmura ,  Nobutoshi Fujii ,  Nobutaka Kunimi ,  Keizo Kinoshita

发明人： Yasuyoshi Hyodo ,  Kazuo Kohmura ,  Nobutoshi Fujii ,  Nobutaka Kunimi ,  Keizo Kinoshita

IPC分类号： B32B3/00 ,  B32B5/00 ,  B32B5/18 ,  B32B37/00 ,  B29C65/00

CPC分类号： H01L21/31695 ,  B01D67/0072 ,  B01D71/70 ,  B01D2325/02 ,  B01D2325/26 ,  C23C16/401 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

摘要翻译： 在半导体衬底上形成多孔膜的方法包括：将在其分子中含有至少一个Si-O键的硅化合物在气相中供给到反应室中; 通过硅化合物的等离子体反应形成硅氧烷低聚物; 并将气相中的有机胺供给到反应室中，并使有机胺与硅氧烷低聚物反应，从而在半导体衬底上形成多孔膜。

公开(公告)号：US08212338B2

公开(公告)日：2012-07-03

申请号：US12760041

申请日：2010-04-14

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L21/00

CPC分类号： H01L21/7682 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1047

摘要： A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided.A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

摘要翻译： 提供具有足够低介电常数和高机械强度的半导体器件（具有层间绝缘膜）。 半导体器件的制造方法包括：在半导体衬底的表面上形成有多个孔布置在主要由Si-O键构成的骨架周围的电介质薄膜的步骤，在该半导体衬底的表面上具有期望的元件区域 形成了; 通过掩模在电介质薄膜的表面上施加图案的步骤; 以及使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS））的气体与电介质薄膜的图案化表面接触的步骤。

公开(公告)号：US07585789B2

公开(公告)日：2009-09-08

申请号：US11604598

申请日：2006-11-27

申请人： Yasuyoshi Hyodo ,  Kazuo Kohmura ,  Nobutoshi Fujii ,  Nobutaka Kunimi ,  Keizo Kinoshita

发明人： Yasuyoshi Hyodo ,  Kazuo Kohmura ,  Nobutoshi Fujii ,  Nobutaka Kunimi ,  Keizo Kinoshita

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31695 ,  B01D67/0072 ,  B01D71/70 ,  B01D2325/02 ,  B01D2325/26 ,  C23C16/401 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

摘要翻译： 在半导体衬底上形成多孔膜的方法包括：将在其分子中含有至少一个Si-O键的硅化合物在气相中供给到反应室中; 通过硅化合物的等离子体反应形成硅氧烷低聚物; 并将气相中的有机胺供给到反应室中，并使有机胺与硅氧烷低聚物反应，从而在半导体衬底上形成多孔膜。

公开(公告)号：US08288295B2

公开(公告)日：2012-10-16

申请号：US11661705

申请日：2005-09-01

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L21/31

CPC分类号： H01L21/76826 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L2221/1047

摘要： A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided.A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

摘要翻译： 提供了具有提高电介质薄膜和导电层之间的粘合性并具有高可靠性的布线结构的半导体器件。 本发明的方法包括：在主要由Si-O键构成的骨架周围配置有多个孔的电介质薄膜的表面供给反应性等离子体的工序，进行预处理; 通过溅射法在预处理的电介质薄膜的表面上形成导电膜的步骤; 在预处理步骤之前，使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS）分子的气体与电介质薄膜的表面接触。

公开(公告)号：US07727907B2

公开(公告)日：2010-06-01

申请号：US11661706

申请日：2005-09-01

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L21/31

CPC分类号： H01L21/7682 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1047

摘要： A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided.A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

摘要翻译： 提供具有足够低介电常数和高机械强度的半导体器件（具有层间绝缘膜）。 半导体器件的制造方法包括：在半导体衬底的表面上形成有多个孔布置在主要由Si-O键构成的骨架周围的电介质薄膜的步骤，在该半导体衬底的表面上具有期望的元件区域 形成了; 通过掩模在电介质薄膜的表面上施加图案的步骤; 以及使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS））的气体与电介质薄膜的图案化表面接触的步骤。

公开(公告)号：US20080122101A1

公开(公告)日：2008-05-29

申请号：US11661705

申请日：2005-09-01

申请人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

发明人： Yoshiaki Oku ,  Nobutoshi Fujii ,  Kazuo Kohmura

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L2221/1047

摘要： A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided.A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

摘要翻译： 提供了具有提高电介质薄膜和导电层之间的粘合性并具有高可靠性的布线结构的半导体器件。 本发明的方法包括：在主要由Si-O键构成的骨架周围配置有多个孔的电介质薄膜的表面供给反应性等离子体的工序，进行预处理; 通过溅射法在预处理的电介质薄膜的表面上形成导电膜的步骤; 在预处理步骤之前，使含有至少一种四甲基环四硅氧烷（TMCTS），六甲基硅氮烷（HMDS）和三甲基氯硅烷（TMCS）分子的气体与电介质薄膜的表面接触。