公开(公告)号：US06503816B2

公开(公告)日：2003-01-07

申请号：US09832860

申请日：2001-04-12

申请人： Norikazu Ito ,  Yoshimi Watabe ,  Akihisa Matsuda ,  Michio Kondo

发明人： Norikazu Ito ,  Yoshimi Watabe ,  Akihisa Matsuda ,  Michio Kondo

IPC分类号： H01L2120

CPC分类号： H01J37/321 ,  C23C16/24 ,  C23C16/509 ,  C23C16/515 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A thin film forming method and apparatus forms a thin film having an excellent thickness uniformity over a substrate, particularly a large-area substrate. The thin film forming method and apparatus includes a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged, a high-frequency power source for feeding a high-frequency power to the feeding portion, and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source. The amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode.

摘要翻译： 薄膜形成方法和装置形成在基板，特别是大面积基板上具有优异的厚度均匀性的薄膜。 薄膜形成方法和装置包括：成膜室，其中布置有具有馈电部分和其两端的接地部分的感应耦合电极，用于将高频电力馈送到馈电部分的高频电源 以及用于对从高频电源输出的高频电力进行幅度调制的波形发生器。 将幅度调制的高频功率馈送到感应耦合电极以产生等离子体，使得可以在布置成面对感应耦合电极的基板上形成薄膜。

公开(公告)号：US5808316A

公开(公告)日：1998-09-15

申请号：US653566

申请日：1996-05-24

申请人： Akihisa Matsuda ,  Michio Kondo ,  Yoshihiko Chida

发明人： Akihisa Matsuda ,  Michio Kondo ,  Yoshihiko Chida

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L29/76 ,  H01L23/62 ,  H01L27/108

CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78678

摘要： The disclosure relates to a microcrystal silicon thin film transistor; The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a non-doped microcrystal silicon film formed on the insulating film, and source and drain electrodes which are formed on the microcrystal film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.

摘要翻译： 本发明涉及微晶硅薄膜晶体管; 晶体管包括基板，形成在基板上的栅极电极，形成在基板上的绝缘膜，形成在绝缘膜上的非掺杂微晶硅膜，以及形成在微晶膜上的源极和漏极。 在晶体管中，通过微晶硅膜在源极和漏极之间提供欧姆接触。 绝缘膜可选地具有通过用含有HF的水溶液蚀刻在衬底上形成的绝缘膜制备的蚀刻表面层。 TFT可以通过简单的方式以安全和简单的设备生产。

公开(公告)号：US06787692B2

公开(公告)日：2004-09-07

申请号：US09984905

申请日：2001-10-31

申请人： Kenji Wada ,  Yoshiyuki Nasuno ,  Michio Kondo ,  Akihisa Matsuda

发明人： Kenji Wada ,  Yoshiyuki Nasuno ,  Michio Kondo ,  Akihisa Matsuda

IPC分类号： H01L31052

CPC分类号： H01L31/076 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/077 ,  H01L31/182 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/26

摘要： A solar cell substrate has irregularities on a surface which is in contact with a photo-electric conversion layer, and light is incident on the side of the irregularities. The height of the irregularities is set so that the root mean square height is in a range of 15 nm to 600 nm, and tan &thgr; is in a range of 0.10 to 0.30, where &thgr; is the angle of incline of the surface of the irregularities with respect to an average line of the irregularities. Light incident on the irregularities is scattered at the interface. This increases the optical path length and thus the quantity of light absorbed in the photo-electric conversion layer, resulting in improved efficiency. Additionally, the photo-electric conversion layer can be made thinner reducing deposit time and manufacturing cost. Further, collision of crystals is not incurred, thus preventing deterioration of photo-electric conversion efficiency which is caused by defects.

摘要翻译： 太阳能电池基板在与光电转换层接触的表面上具有不规则性，并且光入射到不规则部分的一侧。 凹凸的高度被设定为使得均方根高度在15nm至600nm的范围内，并且tanθ在0.10至0.30的范围内，其中θ是不规则部分的表面的倾斜角 相对于平均线的违规行为。 光线不规则的事件分散在界面处。 这增加了光路长度，从而增加了光电转换层中吸收的光量，从而提高了效率。 另外，可以使光电转换层更薄，减少沉积时间和制造成本。 此外，不会发生晶体碰撞，从而防止由缺陷引起的光电转换效率的劣化。

公开(公告)号：US5834796A

公开(公告)日：1998-11-10

申请号：US653565

申请日：1996-05-24

申请人： Akihisa Matsuda ,  Michio Kondo ,  Yoshihiko Chida

发明人： Akihisa Matsuda ,  Michio Kondo ,  Yoshihiko Chida

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678

摘要： The disclosure relates to an amorphous silicon thin film transistor. The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a hydrogenated amorphous silicon film formed on the insulating film, a non-doped microcrystal silicon film formed on the amorphous silicon film; and source and drain electrodes which are formed on the microcrystal silicon film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.

摘要翻译： 本公开涉及非晶硅薄膜晶体管。 晶体管包括基板，形成在基板上的栅极电极，形成在基板上的绝缘膜，形成在绝缘膜上的氢化非晶硅膜，形成在非晶硅膜上的非掺杂微晶硅膜; 以及形成在微晶硅膜上的源极和漏极。 在晶体管中，通过微晶硅膜在源极和漏极之间提供欧姆接触。 绝缘膜可选地具有通过用含有HF的水溶液蚀刻在衬底上形成的绝缘膜制备的蚀刻表面层。 TFT可以通过简单的方式以安全和简单的设备生产。

公开(公告)号：US5068541A

公开(公告)日：1991-11-26

申请号：US567741

申请日：1990-08-15

申请人： Michio Kondo

发明人： Michio Kondo

IPC分类号： G01B11/30

CPC分类号： G01B11/303

摘要： An apparatus for measuring surface roughness or profile of a subject, including a truncated conical lens having a central circular flat surface and a conical surface, and an objective lens disposed in series with the truncated conical lens. Parallel rays of light are transmitted through the truncated conical and objective lenses and are thereby converted into a first and a second measuring beam for irradiating respectively a minute spot on the surface of the subject and an annular spot surrounding the minute spot. An optical arrangement is provided for preparing a reference beam whose frequency is different from that of the measuring beams, and effecting interference between the reference beam with each of the first and second measuring beams, to produce two beat beams, which are converted into electrical beat signals. A height variation or roughness of the subject surface is determined based on a phase difference between the two beat signals.

摘要翻译： 一种用于测量被摄体的表面粗糙度或轮廓的装置，包括具有中心圆形平坦表面和锥形表面的截头圆锥形透镜，以及与所述截头圆锥形透镜串联布置的物镜。 平行光线通过截锥体和物镜透射，从而转换成第一和第二测量光束，用于分别照射被检体的表面上的微小斑点和围绕微小点的环形斑点。 提供一种光学装置，用于准备与测量光束频率不同的参考光束，并且将参考光束与第一和第二测量光束中的每一个进行干涉，以产生两个拍拍光束，其被转换成电拍 信号。 基于两个拍子信号之间的相位差确定被摄体表面的高度变化或粗糙度。

公开(公告)号：US4905311A

公开(公告)日：1990-02-27

申请号：US307303

申请日：1989-02-07

申请人： Motohito Hino ,  Yoshinori Bessho ,  Michio Kondo

发明人： Motohito Hino ,  Yoshinori Bessho ,  Michio Kondo

IPC分类号： G01B11/30

CPC分类号： G01B11/306

摘要： An optical surface roughness measuring device for measuring roughness of a surface of a subject in a non-contacting manner. The apparatus includes a laser device for producing two linearly polarized laser beams which has mutually perpendicular polarization planes and different frequencies, and an optical device adapted to receive the two linearly polarized beams, converge one of the two laser beams so as to irradiate a first reading spot on the surface of the subject, convert the other of the two laser beams into parallel rays of light, and irradiate a second reading spot on the surface with the parallel rays of light of the other laser beam such that the second reading spot is aligned with the first reading spot and has a diameter sufficiently larger than that of the first reading spot. The surface roughness is measured based on a detected change in a beat frequency of the two laser beams reflected by the first and second reading spots. Alternatively, the two beams may be converged by a converging lens device at two spaced-apart points of the subject surface. In this case, an optical device includes an arrangement for establishing an angle of inclination between the directions of incidence of the two beams upon the converging lens device.

摘要翻译： 一种用于以非接触方式测量被检体的表面粗糙度的光学表面粗糙度测量装置。 该装置包括用于产生具有相互垂直的偏振面和不同频率的两个线性偏振激光束的激光装置，以及适于接收两个线性偏振光束的光学装置，会聚两个激光束中的一个以照射第一读数 将两个激光束中的另一个转换为平行光线，并用另一个激光束的平行光线照射表面上的第二个读数点，使得第二读取点对准 具有第一读数点并具有比第一读数点的直径足够大的直径。 基于由第一和第二读取点反射的两个激光束的拍频的检测变化来测量表面粗糙度。 或者，两个光束可以由会聚透镜装置在被摄体表面的两个间隔开的点处会聚。 在这种情况下，光学装置包括用于在会聚透镜装置上建立两束光束的入射方向之间的倾斜角的装置。

公开(公告)号：US20060263921A1

公开(公告)日：2006-11-23

申请号：US11386871

申请日：2006-03-23

申请人： Toshihiro Nakamura ,  Nobuaki Orita ,  Hisashi Koaizawa ,  Kenkichi Suzuki ,  Hiroshi Kuraseko ,  Michio Kondo

发明人： Toshihiro Nakamura ,  Nobuaki Orita ,  Hisashi Koaizawa ,  Kenkichi Suzuki ,  Hiroshi Kuraseko ,  Michio Kondo

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C23C16/44 ,  C23C16/545 ,  H01L27/304 ,  H01L29/0657 ,  H01L29/0673 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/0475 ,  Y02E10/50 ,  Y10T428/2933

摘要： The linear semiconductor substrate 1 or 2 of the present invention comprises at least one desired thin film 4 formed on a linear substrate 3 having a length ten or more times greater than a width, thickness, or diameter of the linear substrate itself. Adopting semiconductor as the thin film 4 forms a linear semiconductor thin film. The linear semiconductor substrate 1 or 2 of the present invention is produced by utilizing a fiber-drawing technique which is a fabricating technique of optical fibers.

摘要翻译： 本发明的线性半导体衬底1或2包括形成在线性衬底3上的至少一个所需的薄膜4，该线性衬底3具有比线性衬底本身的宽度，厚度或直径大十倍或更多倍的长度。 采用半导体作为薄膜4形成线性半导体薄膜。 本发明的线性半导体基板1或2通过利用作为光纤的制造技术的光纤拉丝技术来制造。

公开(公告)号：US5986215A

公开(公告)日：1999-11-16

申请号：US839228

申请日：1997-04-21

申请人： Shuichi Watanabe ,  Kazuyuki Katogi ,  Michio Kondo ,  Taiichi Takeda

发明人： Shuichi Watanabe ,  Kazuyuki Katogi ,  Michio Kondo ,  Taiichi Takeda

IPC分类号： H01B7/14 ,  H01B7/24 ,  H02G1/10 ,  H02G9/02 ,  H01B7/00

CPC分类号： H02G1/10

摘要： A submarine cable protecting device in which a plurality of pairs of half members are connected in series, includes a cylindrical portion which encloses a submarine cable. An outside spherical surface extending from one end of the cylindrical portion is provided at one end of each of the half members. An inside spherical surface extending from the other end of the cylindrical portion is provided at the other end of each of the half members, the inside spherical surface being shaped such that the inside spherical surface of one of the half members encompasses the outside spherical surface of another of the half members and the outside spherical surface cannot be detached from the inside spherical surface when the two half members are connected in series. The outside spherical surfaces of one pair of the half members has a reduced outside diameter when the outside spherical surfaces are contacted and the inside spherical surfaces are separated. The outside spherical surfaces are inserted into the inside spherical surfaces of another pair of the half members, and the two pairs of the half members are connected in series when the inside spherical surfaces are contacted.

摘要翻译： 其中多对成对的半部件串联连接的海底电缆保护装置包括包围海底电缆的圆筒形部分。 从圆柱形部分的一端延伸的外侧球形表面设置在每个半部件的一端。 从所述圆筒部的另一端延伸的内侧球面设置在所述半部的每一个的另一端，所述内侧球面成形为使得所述半个部件中的一个的内侧球面表示为 当两个半部件串联连接时，半部件和外球面中的另一个不能从内球面分离。 当外侧球面接触并且内侧球面分离时，一对半部件的外侧球面的外径减小。 外侧球形表面插入另一对半部件的内侧球面中，并且当内侧球面接触时，两对半部件串联连接。

公开(公告)号：US09012256B2

公开(公告)日：2015-04-21

申请号：US13808738

申请日：2011-09-28

申请人： Shinya Nakano ,  Yoshiaki Takeuchi ,  Michio Kondo ,  Takuya Matsui

发明人： Shinya Nakano ,  Yoshiaki Takeuchi ,  Michio Kondo ,  Takuya Matsui

IPC分类号： H01L31/20 ,  H01L31/18 ,  H01L31/0376 ,  H01L31/0747

CPC分类号： H01L31/202 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (11).

摘要翻译： 一种能够提高具有由p型结晶Ge（基板），i型非晶硅半导体层和n型非晶硅半导体构成的异质结的太阳能电池的发电特性的光电转换装置的制造方法 层。 一种用于制造光电器件（100）的方法，该光电器件（100）包括异质结电池（1），该异质结电池（1）通过将i型非晶硅半导体层（12）和n型非晶硅半导体层（13）依次层叠在基板 p型结晶Ge（11）），该方法包括将表面氧化膜从其中除去的衬底（11）的温度调节到规定温度的PH3曝光处理阶段，然后将衬底置于 真空室，并将衬底暴露于PH3，在暴露于PH3的衬底上沉积i型非晶硅半导体层（12）的i层沉积阶段，沉积n型非晶硅的n层沉积阶段 i型非晶硅半导体层（12）上的半导体层（13），以及在n型非晶硅半导体层的表面上形成电极（2,3,4）的电极形成级，以及背面 表面 的基板（11）。

公开(公告)号：US08778719B2

公开(公告)日：2014-07-15

申请号：US13225872

申请日：2011-09-06

申请人： Toshihiro Nakamura ,  Nobuaki Orita ,  Hisashi Koaizawa ,  Kenkichi Suzuki ,  Hiroshi Kuraseko ,  Michio Kondo

发明人： Toshihiro Nakamura ,  Nobuaki Orita ,  Hisashi Koaizawa ,  Kenkichi Suzuki ,  Hiroshi Kuraseko ,  Michio Kondo

IPC分类号： H01L31/18

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C23C16/44 ,  C23C16/545 ,  H01L27/304 ,  H01L29/0657 ,  H01L29/0673 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/0475 ,  Y02E10/50 ,  Y10T428/2933

摘要： The linear semiconductor substrate 1 or 2 of the present invention comprises at least one desired thin film 4 formed on a linear substrate 3 having a length ten or more times greater than a width, thickness, or diameter of the linear substrate itself. Adopting semiconductor as the thin film 4 forms a linear semiconductor thin film. The linear semiconductor substrate 1 or 2 of the present invention is produced by utilizing a fiber-drawing technique which is a fabricating technique of optical fibers.

摘要翻译： 本发明的线性半导体衬底1或2包括形成在线性衬底3上的至少一个所需的薄膜4，该线性衬底3具有比线性衬底本身的宽度，厚度或直径大十倍或更多倍的长度。 采用半导体作为薄膜4形成线性半导体薄膜。 本发明的线性半导体基板1或2通过利用作为光纤的制造技术的光纤拉丝技术来制造。