摘要:
A solid-state image pickup device has a plurality of photoelectric conversion elements arranged in a two-dimensional pattern, to which horizontal and vertical switches are coupled for selecting the photoelectric conversion elements; horizontal and vertical scanning circuitry for turning the switches "on" and "off" are integrated on the same semiconductor substrate. In order to detect an image with low capacitive lag and high resolution power, the required minimum number (four) of switching elements, adapted to turn respective fields "on" and "off" in a predetermined combination, are connected to an output terminal of each of the unit circuits which constitute the vertical scanning circuit. Using an output scanning pulse from the vertical scanning circuit and a field pulse, interlaced scanning in which two row lines are simultaneously selected in one of the combinations differing for the respective fields is executed so as to derive an optical image through the vertical switches.
摘要:
A color solid-state imaging device is provided with a plurality of signal output lines for reading out signals derived from photoelectric conversion elements which form picture elements for red, green, and blue lights arranged in, for example, a checkered pattern.
摘要:
In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要:
In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要:
The present invention relates to a color imaging device which suppresses false color signals appearing in an area where the difference of brightnesses is great in the horizontal or vertical direction.When the correlation between picture elements adjacent in the vertical direction is little and the false signal appears in a boundary part in the vertical direction, the false signal is detected, whereupon a color signal is demodulated by utilizing the correlation between the signals of picture elements in the horizontal direction. On the other hand, when the correlation between picture elements adjacent in the horizontal direction is little and the false signal appears in a boundary part in the horizontal direction, the false signal is detected, whereupon a color signal is demodulated by utilizing the correlation between the signals of picture elements in the vertical direction.As a result, the moire phenomenon attributed to the false color signals can be conspicuously reduced.While embodiments of the present invention refer to color imaging devices which employ MOS type solid-state imaging devices, the invention is also applicable to an imaging device which employs CCDs and a color image pickup tube which separates colors by means of a mosaic color filter.
摘要:
This invention relates to a solid-state imaging apparatus wherein photo signals are read out through MOS type FETs from photosensors such as photodiodes arrayed in two dimensions in large numbers, and consists in remarkably enhancing the signal-to-noise ratio of an output signal by reducing or eliminating noise components to mix into the photo signals.The analysis of the noise components has revealed the correlation in which the noise component in a certain polarity develops in the opposite polarity again after a period that is shorter than one horizontal scanning period by the duration of one horizontal scanning pulse. With note taken of the correlation, a solid-state imaging apparatus comprising a processing circuit which includes a delay circuit and an adder circuit and which cancels the noise is provided.
摘要:
An image pickup apparatus provided with a circuit for taking the maximum one of the three signal currents out of three photoconductive pickup tubes and a circuit for obtaining the difference of the maximum signal current from a current proportional to one of the cathode currents of the three pickup tubes, wherein the voltages at the beam control electrodes of the three pickup tubes are controlled together by the voltage signal corresponding to the difference current so that the resolutions of the pickup tubes are improved and that the scanning beam control circuit is simplified.
摘要:
An analog signal is stored in an analog memory device, while lower bits of a digital signal obtained by digitizing the analog signal is stored in a digital memory device. An analog signal reproduced from the analog memory device is corrected on the basis of a digital signal reproduced from the digital memory device. The corrected reproduced signal is stored in the memory device again, whereby a recursive storage system is constructed. A signal component degraded by noise in the analog storage is corrected with the digital signal, with the result that storage and reproduction of favorable signal-to-noise ratio are realized.
摘要:
A solid-state imaging device comprises a number of photodiodes arrayed in horizontal rows and vertical columns, a first output circuit for sequentially reading out signal charges from those photodiodes which are arrayed on odd-numbered horizontal rows, a second output circuit for sequentially reading out signal charges from the photodiodes arrayed on the even-numbered horizontal rows, a synchronizing pulse generator for synchronizing operation of the first and second output circuits, a first subtracting circuit for determining the difference between the output signals of the first and second output circuits in odd-numbered field, and a second subtracting circuit for determining the difference between the output signals of the first and second output circuits in even-numbered field. The outputs of the first and second subtracting circuit are alternately extracted in synchronism with the synchronizing pulse produced by the synchronizing pulse generator. The solid-state imaging device is made immune to the smear phenomenon. The invention can be advantageously applied to the solid-state imaging device of CCD type as well as MOS type.
摘要:
Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.