Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4323912A

    公开(公告)日:1982-04-06

    申请号:US152690

    申请日:1980-05-23

    CPC分类号: H01L27/14665

    摘要: In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译: 在具有半导体集成电路的固态成像装置中,其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上, 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极,施加到光透射电极的电压,从而偏压光电导区域 相对于其相对侧的区域,光入射侧的膜是正或负的; 一种固态成像装置,其特征在于,所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Solid-state imaging device
    2.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4209806A

    公开(公告)日:1980-06-24

    申请号:US928734

    申请日:1978-07-27

    CPC分类号: H01L27/14643 H01L27/088

    摘要: In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.

    摘要翻译: 在其中多个光电转换元件,用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N(或P)型半导体的主表面区域中 其特征在于,在所述半导体主体的主表面区域设置有彼此隔离的多个P(或N)型杂质层,所述开关晶体管和所述光电转换元件被集成 在一个杂质层中,水平扫描电路集成在另一个杂质层中,垂直扫描电路集成在另一个杂质层中,并且预定电压施加到设置在各个杂质层上的电极。

    Circuit for generating scanning pulses
    3.
    发明授权
    Circuit for generating scanning pulses 失效
    用于产生扫描脉冲的电路

    公开(公告)号:US4295055A

    公开(公告)日:1981-10-13

    申请号:US46028

    申请日:1979-06-06

    摘要: A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.

    摘要翻译: 一种用于产生扫描脉冲的电路,包括串联连接的多级基本电路,所述每个基本电路包括第一,第二和第三绝缘栅极场效应晶体管(MIST),每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子,所述第一MIST的所述栅极端子用作输入端子,所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子,所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子,所述第三MIST的所述第二端子 被用作接地端子,所述第三MIST的所述栅极端子用作反馈输入端子。

    Solid-state imaging device with high quasi-signal sweep-out efficiency
and high signal charge transfer efficiency
    4.
    发明授权
    Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
    具有高准信号扫频效率和高信号电荷转移效率的固态成像装置

    公开(公告)号:US4532549A

    公开(公告)日:1985-07-30

    申请号:US473865

    申请日:1983-03-10

    CPC分类号: H01L27/14643

    摘要: Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.

    摘要翻译: 公开了一种固态成像装置,其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线,然后垂直信号线上的光信息被水平扫描 电荷转移装置的水平寄存器。 偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间,偏置电荷输入装置布置在水平寄存器中。 为了确保在垂直线之间向存储装置,扫除漏极和电荷转移装置传输信号的高效率,布置为在每个转移阶段提供偏置电荷。 因此,使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。 类似地,从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。 最后,从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。 由此,来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强,并且产生高质量的视频信号。

    Solid-state imaging device having a clamping circuit for drawing out
excess charge
    9.
    发明授权
    Solid-state imaging device having a clamping circuit for drawing out excess charge 失效
    具有用于抽出多余电荷的钳位电路的固态成像装置

    公开(公告)号:US4267469A

    公开(公告)日:1981-05-12

    申请号:US066880

    申请日:1979-08-16

    摘要: In a solid-state imaging device having on an identical semiconductor substrate a plurality of photodiodes which are arrayed in two dimensions, vertical and horizontal switching MOSFETs which select the positions of the photodiodes, and vertical and horizontal scanning circuits which provide scanning pulses for controlling the operations of the vertical and horizontal switching MOSFETs; the improvement therein comprising a clamping circuit which is made up of a diode, a MOSFET or the like and which is disposed between the photodiode and a vertical scanning line of the succeeding stage, so that excess charges overflowing the photodiode are drawn out from the vertical scanning line through the clamping circuit, whereby the blooming can be prevented.

    摘要翻译: 在具有相同半导体衬底的固态成像器件中,排列有二维排列的多个光电二极管,选择光电二极管的位置的垂直和水平开关MOSFET以及提供扫描脉冲的垂直和水平扫描电路,用于控制 垂直和水平开关MOSFET的工作; 其改进在于包括由二极管,MOSFET等组成并且设置在光电二极管和后级的垂直扫描线之间的钳位电路,使得溢出光电二极管的过量电荷从垂直线 扫描线通过钳位电路,从而可以防止起霜。