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    Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4323912A

    公开(公告)日：1982-04-06

    申请号：US152690

    申请日：1980-05-23

    申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Solid-state imaging device
    2.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4360821A

    公开(公告)日：1982-11-23

    申请号：US66230

    申请日：1979-08-13

    申请人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

    发明人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

    摘要翻译： 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

    Photoelectric device and method of producing the same
    3.
    发明授权
    Photoelectric device and method of producing the same 失效
    光电器件及其制造方法

    公开(公告)号：US4394749A

    公开(公告)日：1983-07-19

    申请号：US154999

    申请日：1980-05-30

    申请人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

    发明人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

    IPC分类号： H01L27/146 ,  G11C13/00

    CPC分类号： H01L27/14665

    摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.

    摘要翻译： 具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖 电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。 非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。 无定形硫族化物材料在以下方面非常有用。 在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此 可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

    Storage type photosensor containing silicon and hydrogen
    5.
    发明授权
    Storage type photosensor containing silicon and hydrogen 失效
    含硅和氢的存储型光电传感器

    公开(公告)号：US4255686A

    公开(公告)日：1981-03-10

    申请号：US39580

    申请日：1979-05-16

    申请人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    发明人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01J31/38

    CPC分类号： H01J29/45

    摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

    摘要翻译： 在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于 至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

    Photoelectric device
    8.
    发明授权
    Photoelectric device 失效
    光电器件

    公开(公告)号：US4556816A

    公开(公告)日：1985-12-03

    申请号：US510910

    申请日：1983-07-05

    申请人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    发明人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H01J31/00 ,  H01J31/26

    CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233

    摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.

    摘要翻译： 公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的 层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物 ，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

    Photosensor
    10.
    发明授权
    Photosensor 失效
    光电传感器

    公开(公告)号：US4232219A

    公开(公告)日：1980-11-04

    申请号：US15615

    申请日：1979-02-27

    申请人： Hideaki Yamamoto ,  Toshihisa Tsukada ,  Eiichi Maruyama ,  Hiroya Inagaki

    发明人： Hideaki Yamamoto ,  Toshihisa Tsukada ,  Eiichi Maruyama ,  Hiroya Inagaki

    IPC分类号： H04N1/028 ,  G03F3/08 ,  H04N1/04 ,  H04N1/46 ,  H04N1/48 ,  G02B5/14

    CPC分类号： H04N1/486

    摘要： A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.

    摘要翻译： 一种光传感器，包括具有形成在与要读取的信息表面间隔开的表面中的光接收窗口的光纤基板，设置在光纤基板中并位于光接收窗口中的一束光纤。 具有不同特性的多个滤色器设置在光纤束的端面上，并且还提供了与滤色器对应的多个感光元件阵列。 感光元件阵列与光纤基片一体地设置，并且设置在离信息表面最远的光纤束的端面的区域中。