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公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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公开(公告)号：US20130043496A1
公开(公告)日：2013-02-21
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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公开(公告)号：US08866175B2
公开(公告)日：2014-10-21
申请号：US13821554
申请日：2011-08-22
申请人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
发明人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
CPC分类号： H01L33/62 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 镜层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。
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公开(公告)号：US20130228819A1
公开(公告)日：2013-09-05
申请号：US13821554
申请日：2011-08-22
申请人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
发明人： Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。
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5.发明申请Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip 审中-公开光电半导体芯片及其适用于接触光电子半导体芯片的接触结构的方法公开(公告)号：US20120299049A1
公开(公告)日：2012-11-29
申请号：US13497733
申请日：2010-09-10
CPC分类号： H01L27/153 , G01R31/318516 , H01H85/0417 , H01H85/32 , H01L23/5256 , H01L25/0753 , H01L27/156 , H01L33/62 , H01L51/50 , H01L2224/73265 , H01L2924/00 , H01L2924/0002 , H02H3/046 , H03K17/74 , H03K19/17728 , H05B33/083 , H05B33/0893 , Y10T29/49204
摘要： An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.
摘要翻译： 光电子半导体芯片具有带有第一端子和第二端子的第一半导体功能区域。 接触结构与光电子半导体芯片电接触。 接触结构电连接到第一半导体功能区。 接触结构具有可断开的导体结构。 如果导体结构不断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流通路。 如果导体结构断开，则该路径中断。 或者，如果导体结构断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流路径。 如果导体结构未断开，则导体结构将第一端子连接到第二端子并使第一半导体功能区域短路。
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公开(公告)号：US20130328066A1
公开(公告)日：2013-12-12
申请号：US13883346
申请日：2011-11-02
申请人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
发明人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译： 光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分 由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。
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公开(公告)号：US09601663B2
公开(公告)日：2017-03-21
申请号：US13819873
申请日：2011-08-17
申请人： Lutz Höppel , Norwin von Malm , Matthias Sabathil
发明人： Lutz Höppel , Norwin von Malm , Matthias Sabathil
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.
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公开(公告)号：US08969900B2
公开(公告)日：2015-03-03
申请号：US13883346
申请日：2011-11-02
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译： 光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分 由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。
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公开(公告)号：US20140145227A1
公开(公告)日：2014-05-29
申请号：US13819873
申请日：2011-08-17
申请人： Lutz Höppel , Norwin von Malm , Matthias Sabathil
发明人： Lutz Höppel , Norwin von Malm , Matthias Sabathil
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.
摘要翻译： 发光二极管芯片包括半导体本体，其包括辐射产生有源区，至少两个电接触有源区的接触位置，载体和布置在载体和半导体本体之间的连接介质，其中半导体主体包括粗糙化 在面向载体的外表面上，半导体主体通过连接介质机械连接到载体，连接介质局部直接接触半导体本体和载体，并且至少两个接触位置被布置在半导体本体的上侧 面向远离运营商。
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公开(公告)号：US20140085169A1
公开(公告)日：2014-03-27
申请号：US14110412
申请日：2012-03-01
申请人： Stefan Illek , Norwin von Malm , Tilman Ruegheimer
发明人： Stefan Illek , Norwin von Malm , Tilman Ruegheimer
IPC分类号： G09G3/32
CPC分类号： G09G3/3208 , G09G3/32 , H01L25/0753
摘要： A display device includes a multiplicity of pixels, at least one connection carrier, and a multiplicity of inorganic light-emitting diode chips. The connection carrier includes a multiplicity of switches. Each pixel contains at least one light-emitting diode chip. Each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier. Each switch is designed for driving at least one light-emitting diode chip and the light-emitting diode chips are imaging elements of the display device.
摘要翻译： 显示装置包括多个像素，至少一个连接载体和多个无机发光二极管芯片。 连接载体包括多个开关。 每个像素包含至少一个发光二极管芯片。 每个发光二极管芯片被机械地固定并电连接到连接载体上。 每个开关被设计用于驱动至少一个发光二极管芯片，并且发光二极管芯片是显示装置的成像元件。
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