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公开(公告)号：US12080995B2
公开(公告)日：2024-09-03
申请号：US17263786
申请日：2019-07-30
Applicant: OSRAM OLED GmbH
Inventor： Peter Jander , Michael Roth , Tomasz Swietlik , Clemens Vierheilig
CPC classification number: H01S5/0612 , H01S5/02453 , H01S5/0261 , H01S5/22 , H01S5/323
Abstract: A laser diode chip is described, comprising including:
an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,
at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and
at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.-
公开(公告)号：US20210167581A1
公开(公告)日：2021-06-03
申请号：US17172138
申请日：2021-02-10
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.
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公开(公告)号：US11742633B2
公开(公告)日：2023-08-29
申请号：US17172138
申请日：2021-02-10
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
IPC: H01S5/22 , H01S5/30 , H01S5/02 , H01S5/0234
CPC classification number: H01S5/2205 , H01S5/22 , H01S5/3013 , H01S5/3018 , H01S5/0202 , H01S5/0234 , H01S5/2222 , H01S2301/176
Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.
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公开(公告)号：US20200227893A1
公开(公告)日：2020-07-16
申请号：US16834037
申请日：2020-03-30
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US11804568B2
公开(公告)日：2023-10-31
申请号：US16980859
申请日：2019-04-26
Applicant: Osram OLED GmbH
Inventor： Rainer Hartmann , Clemens Vierheilig , Tobias Meyer , Andreas Rueckerl , Tilman Schimpke , Michael Binder
CPC classification number: H01L33/0093 , H01L25/0753 , H01L33/0095 , H01L33/12 , H01L33/62
Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.
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Patent Agency Ranking
公开(公告)号：US11581707B2
公开(公告)日：2023-02-14
申请号：US17324416
申请日：2021-05-19
Applicant: OSRAM OLED GmbH
Inventor： Clemens Vierheilig , Andreas Löffler , Sven Gerhard
Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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公开(公告)号：US20210273416A1
公开(公告)日：2021-09-02
申请号：US17324416
申请日：2021-05-19
Applicant: OSRAM OLED GmbH
Inventor： Clemens Vierheilig , Andreas Löffler , Sven Gerhard
IPC: H01S5/40 , H01S5/042 , H01S5/00 , H01S5/02345
Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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公开(公告)号：US10938180B2
公开(公告)日：2021-03-02
申请号：US16834037
申请日：2020-03-30
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US10811843B2
公开(公告)日：2020-10-20
申请号：US15761419
申请日：2016-09-27
Applicant: OSRAM OLED GMBH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Loeffler , Christoph Eichler
Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.
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公开(公告)号：US10784653B2
公开(公告)日：2020-09-22
申请号：US16079678
申请日：2017-02-23
Applicant: OSRAM OLED GmbH
Inventor： Andreas Loeffler , Clemens Vierheilig , Sven Gerhard
IPC: H01S5/22 , H01S5/40 , H01L25/16 , H01L33/00 , H01L33/22 , H01L33/24 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/343 , H01S5/323 , H01S5/227
Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.
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