公开(公告)号：US20160204032A1

公开(公告)日：2016-07-14

申请号：US14911024

申请日：2014-07-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Mathias KAEMPF

IPC: H01L21/78 ,  H01L33/00 ,  H01L21/268 ,  H01L21/683 ,  B23K26/38 ,  B23K26/40

CPC classification number: B23K26/53 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327

Abstract: The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.

Abstract translation: 本发明涉及一种沿着分割图案将复合材料分割为多个半导体芯片的方法。 提供了包括基板，半导体层序列和功能层的复合材料。 沿着分割图案在基板中形成分隔沟槽。 通过相干辐射沿着分割图案切割功能层。 每个划分的半导体芯片具有半导体层序列的一部分，基板的一部分和功能层的一部分。 本发明还涉及一种半导体芯片。

公开(公告)号：US20160254415A1

公开(公告)日：2016-09-01

申请号：US15030359

申请日：2014-10-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Mathias KAEMPF ,  Simon JEREBIC ,  Ingo NEUDECKER ,  Guenter SPATH ,  Michael HUBER

IPC: H01L33/48 ,  H01L33/56 ,  H01L33/62 ,  H01L33/54 ,  H01L33/60 ,  H01L33/00

CPC classification number: H01L33/486 ,  H01L24/32 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2924/10156 ,  H01L2933/0033

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Abstract translation: 本发明涉及一种包括载体（2）和具有用于产生电磁辐射的有源层（13）的半导体本体（1）的光电半导体芯片（10）。 所述载体（2）具有面向半导体主体的第一主表面（2A），背离半导体主体的第二主表面（2B）和布置在第一主表面和第二主表面之间的侧壁（2C）。 载体（2）具有用于扩大侧壁的总表面积的结构化区域（21,22,23,2C），其中结构化区域具有单一迹线。 本发明还涉及包含这种半导体芯片的光电子部件（100）和制造多个这种半导体芯片的方法。

公开(公告)号：US20150303112A1

公开(公告)日：2015-10-22

申请号：US14647071

申请日：2013-11-08

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Mathias KAEMPF

IPC: H01L21/78 ,  H01L33/00

CPC classification number: H01L21/78 ,  H01L33/0095 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method for singulating an assemblage (1) into a plurality of semiconductor chips (10) is specified, wherein an assemblage comprising a carrier (4), a semiconductor layer sequence (2) and a metallic layer (3) is provided. Separating trenches (45) are formed in the carrier. The assemblage is subjected to mechanical loading, with the result that the metallic layer breaks along the separating trenches and the assemblage is singulated into semiconductor chips, wherein the singulated semiconductor chips each have part of the semiconductor layer sequence, of the carrier and of the metallic layer. A semiconductor chip (10) is furthermore specified.

Abstract translation: 规定了将组合体（1）分割为多个半导体芯片（10）的方法，其中，提供了包括载体（4），半导体层序列（2）和金属层（3）的组合体。 分离沟槽（45）形成在载体中。 该组合件受到机械负载，结果是金属层沿着分离沟槽断裂，并且组合件被分成半导体芯片，其中分离的半导体芯片各自具有半导体层序列的一部分，载体和金属 层。 此外还规定了半导体芯片（10）。

公开(公告)号：US20160204033A1

公开(公告)日：2016-07-14

申请号：US14913681

申请日：2014-08-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Mathias KAEMPF

IPC: H01L21/78 ,  B23K26/53 ,  B23K26/354 ,  H01L23/373 ,  H01L33/00 ,  H01L21/225 ,  H01L21/24 ,  H01L23/367 ,  B23K26/00 ,  H01L21/268

CPC classification number: H01L21/78 ,  B23K26/0006 ,  B23K26/354 ,  B23K26/53 ,  B23K2103/30 ,  B23K2103/56 ,  H01L21/225 ,  H01L21/24 ,  H01L21/268 ,  H01L23/3675 ,  H01L23/3736 ,  H01L31/00 ,  H01L33/0095

Abstract: Disclosed is a method for separating a substrate (1) along a separation pattern (4), in which method a substrate (1) is provided and an auxiliary layer (3) is applied to the substrate, said layer covering the substrate at least along the separation pattern. The substrate comprising the auxiliary layer is irradiated, such that the material of the auxiliary layer penetrates the substrate along the separation pattern in the form of an impurity. The substrate is broken along the separation pattern. A semiconductor chip (15) is also disclosed.

Abstract translation: 公开了一种沿着分离图案（4）分离衬底（1）的方法，其中提供了衬底（1）并且将辅助层（3）施加到衬底，所述层至少沿着衬底 分离模式。 照射包括辅助层的基板，使得辅助层的材料沿着分离图案以杂质的形式穿透基板。 基板沿分离图案断开。 还公开了一种半导体芯片（15）。

公开(公告)号：US20180233627A1

公开(公告)日：2018-08-16

申请号：US15514814

申请日：2015-10-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias KAEMPF ,  Simon JEREBIC ,  Ingo NEUDECKER ,  Guenter SPATH ,  Michael HUBER ,  Korbinian PERZLMAIER

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/20

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

公开(公告)号：US20180117706A1

公开(公告)日：2018-05-03

申请号：US15845883

申请日：2017-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias KAEMPF

IPC: B23K26/00 ,  H01L21/268 ,  B23K26/38 ,  B23K26/40 ,  H01L33/00 ,  H01L21/78 ,  H01L21/683 ,  B23K103/00 ,  B23K101/40

CPC classification number: B23K26/53 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327

Abstract: The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.

公开(公告)号：US20180047628A1

公开(公告)日：2018-02-15

申请号：US15670968

申请日：2017-08-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias KAEMPF

IPC: H01L21/78 ,  H01L33/00

CPC classification number: H01L21/78 ,  H01L33/0095 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method for singulating an assemblage into a plurality of semiconductor chips is specified, wherein an assemblage comprising a carrier, a semiconductor layer sequence and a metallic layer is provided. Separating trenches are formed in the carrier. The assemblage is subjected to mechanical loading, with the result that the metallic layer breaks along the separating trenches and the assemblage is singulated into semiconductor chips, wherein the singulated semiconductor chips each have part of the semiconductor layer sequence, of the carrier and of the metallic layer. A semiconductor chip is furthermore specified.