公开(公告)号：US07736994B2

公开(公告)日：2010-06-15

申请号：US11850481

申请日：2007-09-05

Applicant: Patrick Reynaud ,  Oleg Kononchuk ,  Michael Stinco

Inventor： Patrick Reynaud ,  Oleg Kononchuk ,  Michael Stinco

IPC: H01L21/30

CPC classification number: H01L21/31662 ,  H01L21/02032 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/76254 ,  Y10T428/8305

Abstract: The invention relates to a method for manufacturing compound material wafers, in particular, silicon on insulator type wafers, by providing an initial donor substrate, forming an insulating layer over the initial donor substrate, forming a predetermined splitting area in the initial donor substrate, attaching the initial donor substrate onto a handle substrate and detaching the donor substrate at the predetermined splitting area, thereby transferring a layer of the initial donor substrate onto the handle substrate to form a compound material wafer. In order to be able to reuse the donor substrate more often, the invention proposes to carry out the thermal treatment step to form the insulating layer at a temperature of less than 950° C., in particular, less than 900° C., and preferably at 850° C. The invention also relates to a silicon on insulator type wafer manufactured according to the inventive method.

Abstract translation: 本发明涉及通过提供初始施主衬底，在初始施主衬底上形成绝缘层，在初始施主衬底中形成预定的分裂区域，附着在一起制造复合材料晶片，特别是绝缘体上硅晶片的方法 将初始施主衬底放置在手柄衬底上并在预定的分割区域分离施主衬底，从而将初始施主衬底的一层转移到手柄衬底上以形成复合材料晶片。 为了能够更经常地再次使用供体衬底，本发明提出进行热处理步骤以在小于950℃，特别是小于900℃的温度下形成绝缘层，以及 优选在850℃。本发明还涉及根据本发明方法制造的绝缘体上硅晶片。

公开(公告)号：US20070216042A1

公开(公告)日：2007-09-20

申请号：US11472693

申请日：2006-06-21

Applicant: Daniel Delprat ,  Eric Neyret ,  Oleg Kononchuk ,  Patrick Reynaud ,  Michael Stinco

Inventor： Daniel Delprat ,  Eric Neyret ,  Oleg Kononchuk ,  Patrick Reynaud ,  Michael Stinco

IPC: H01L21/322

CPC classification number: H01L21/02032 ,  H01L21/76254

Abstract: This invention provides methods for manufacturing compound-material wafers and methods for recycling donor substrates that results from manufacturing compound-material wafers. The provided methods includes at least one further thermal treatment step configured to at least partially reduce oxygen precipitates and/or nuclei. Reduction of oxygen precipitates and/or nuclei, improves the recycling rate of the donor substrate.

Abstract translation: 本发明提供了用于制造复合材料晶片的方法以及由制造复合材料晶片产生的用于再循环施主衬底的方法。 所提供的方法包括至少一个另外的热处理步骤，其被配置为至少部分地减少氧沉淀物和/或核。 减少氧沉淀物和/或核，提高了供体底物的再循环率。

公开(公告)号：US08148242B2

公开(公告)日：2012-04-03

申请号：US12811210

申请日：2008-02-20

Applicant: Oleg Kononchuk ,  George K. Celler

Inventor： Oleg Kononchuk ,  George K. Celler

IPC: H01L21/477

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/3105 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/7624

Abstract: A method for manufacturing a SeOI substrate that includes a thin working layer made from one or more semiconductor material(s); a support layer; and a thin buried oxide layer between the working layer and the support layer. The method includes a manufacturing step of an intermediate SeOI substrate having a buried oxide layer with a thickness greater than a thickness desired for the thin buried oxide layer; and a dissolution step of the buried oxide layer in order to form therewith the thin buried oxide layer. After the dissolution step, an oxidation step of the substrate is conducted for creating an oxidized layer on the substrate, and an oxide migration step for diffusing at least a part of the oxide layer through the working layer in order to increase the electrical interface quality of the substrate and decrease its Dit value.

Abstract translation: 一种制造包括由一种或多种半导体材料制成的薄工作层的SeOI衬底的方法; 支撑层; 以及在工作层和支撑层之间的薄的掩埋氧化物层。 该方法包括具有厚度大于薄掩埋氧化物层所需厚度的掩埋氧化物层的中间SeOI衬底的制造步骤; 以及掩埋氧化物层的溶解步骤，以便与其形成薄的掩埋氧化物层。 在溶解步骤之后，进行衬底的氧化步骤以在衬底上形成氧化层，以及氧化物迁移步骤，用于通过工作层扩散氧化物层的至少一部分，以增加氧化层的电接口质量 底物并降低其Dit值。

公开(公告)号：US20100283118A1

公开(公告)日：2010-11-11

申请号：US12811210

申请日：2008-02-20

Applicant: Oleg Kononchuk ,  George K. Celler

Inventor： Oleg Kononchuk ,  George K. Celler

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/3105 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/7624

Abstract: A method for manufacturing a SeOI substrate that includes a thin working layer made from one or more semiconductor material(s); a support layer; and a thin buried oxide layer between the working layer and the support layer. The method includes a manufacturing step of an intermediate SeOI substrate having a buried oxide layer with a thickness greater than a thickness desired for the thin buried oxide layer; and a dissolution step of the buried oxide layer in order to form therewith the thin buried oxide layer. After the dissolution step, an oxidation step of the substrate is conducted for creating an oxidized layer on the substrate, and an oxide migration step for diffusing at least a part of the oxide layer through the working layer in order to increase the electrical interface quality of the substrate and decrease its Dit value.

Abstract translation: 一种制造包括由一种或多种半导体材料制成的薄工作层的SeOI衬底的方法; 支撑层; 以及在工作层和支撑层之间的薄的掩埋氧化物层。 该方法包括具有厚度大于薄掩埋氧化物层所需厚度的掩埋氧化物层的中间SeOI衬底的制造步骤; 以及掩埋氧化物层的溶解步骤，以便与其形成薄的掩埋氧化物层。 在溶解步骤之后，进行基板的氧化步骤，以在基板上形成氧化层，以及氧化物迁移步骤，用于通过工作层扩散氧化物层的至少一部分，以增加电接口质量 底物并降低其Dit值。

公开(公告)号：US20100264458A1

公开(公告)日：2010-10-21

申请号：US12747099

申请日：2009-01-27

Applicant: Ionut Radu ,  Oleg Kononchuk ,  Konstantin Bourdelle

Inventor： Ionut Radu ,  Oleg Kononchuk ,  Konstantin Bourdelle

IPC: H01L29/02 ,  H01L21/26 ,  H01L21/71

CPC classification number: H01L21/76254 ,  H01L21/2007 ,  H01L21/76256

Abstract: A method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method includes providing a silicon oxide layer with a thickness of less than or equal to 25 nanometers on one of a donor substrate or a receiver substrate or on both substrates, heat treating the substrate(s) that contains the silicon oxide layer at 900° C. to 1,200° C. under a neutral or reducing atmosphere that contains at least one of argon or hydrogen to form layer trapping through-holes inside the silicon oxide, bonding the substrates together at a bonding interface with the silicon oxide layer(s) positioned between them, reinforcing the bonding by annealing the substrates at 25° C. to 500° C. such that the trapping holes retaining gas species at the bonding interface, and transferring an active layer as a portion of the donor substrate onto the receiver substrate to obtain the heterostructure.

Abstract translation: 一种用于电子，光学或光电子领域应用的异质结构的方法。 该方法包括在施主基板或接收器基板之一或两个基板上提供厚度小于或等于25纳米的氧化硅层，在900℃下热处理含有氧化硅层的基板 在含有氩或氢中的至少一种的中性或还原性气氛下，在至少1200℃，以在氧化硅内部形成层捕获通孔，在与氧化硅层的接合界面处将基板粘合在一起， 定位在它们之间，通过在25℃至500℃下退火衬底来加强接合，使得在接合界面处保留气体种类的捕获孔，并将作为施主衬底的一部分的活性层转移到接收器衬底上 以获得异质结构。

公开(公告)号：US20100087049A1

公开(公告)日：2010-04-08

申请号：US12574142

申请日：2009-10-06

Applicant: Oleg Kononchuk

Inventor： Oleg Kononchuk

IPC: H01L21/20

CPC classification number: H01L21/187 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02667

Abstract: The invention relates to methods of fabricating a layer of at least partially relaxed material, such as for electronics, optoelectronics or photovoltaics. An exemplary method includes supplying a structure that includes a layer of strained material situated between a reflow layer and a stiffener layer. The method further includes applying a heat treatment that brings the reflow layer to a temperature equal to or greater than the glass transition temperature of the reflow layer, and the thickness of the stiffener layer is progressively reduced during heat treatment. The invention also relates to an exemplary method of fabricating semiconductor devices on a layer of at least partially relaxed material. Specifically, at least one active layer may be formed on the at least partially relaxed material layer. The active layer may include laser components, photovoltaic components and/or electroluminescent diodes.

Abstract translation: 本发明涉及制造至少部分松弛的材料的层的方法，例如用于电子学，光电子学或光电子学。 示例性方法包括提供包括位于回流层和加强层之间的应变材料层的结构。 该方法还包括将回流层施加到等于或大于回流层的玻璃化转变温度的温度的热处理，并且加热层的厚度在热处理期间逐渐降低。 本发明还涉及在至少部分松弛的材料层上制造半导体器件的示例性方法。 具体地说，可以在至少部分松弛的材料层上形成至少一个活性层。 有源层可以包括激光组件，光伏组件和/或电致发光二极管。

公开(公告)号：US20100038756A1

公开(公告)日：2010-02-18

申请号：US12450295

申请日：2008-02-26

Applicant: Christophe Figuet ,  Oleg Kononchuk

Inventor： Christophe Figuet ,  Oleg Kononchuk

IPC: H01L29/04 ,  H01L21/18

CPC classification number: H01L21/02433 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/0262

Abstract: The present invention relates to method of fabricating a (110) oriented silicon substrate and to a method of fabricating a bonded pair of substrates comprising such a (110) oriented silicon substrate. The invention further relates to a silicon substrate with (110) orientation and to a bonded pair of silicon substrates comprising a first silicon substrate with (100) orientation and a second silicon substrate with (110) orientation. It is the object of the present invention to provide methods and substrates of the above mentioned type with a high efficiency wherein the formed (110) substrate has at least near and at its surface virtually no defects. The object is solved by a method of fabricating a silicon substrate with (110) orientation and by a method of fabricating a bonded pair of silicon substrates, comprising the steps of providing a basic silicon substrate with (110) orientation, said basic silicon substrate having a roughness being equal or less than 0.15 nm RMS in a 2×2 μm2 or a 10×10 μm2 scan, and depositing epitaxially a silicon layer with (110) orientation on the basic silicon substrate at a pressure between 40 Torr to 120 Torr, preferably 80 Torr and at a temperature between about 1000° C. and about 1200° C. and using trichlorosilane or dichlorosilane as silicon precursor gas.

Abstract translation: 本发明涉及一种制造（110）定向硅衬底的方法以及一种制造包括这种（110）定向硅衬底的粘结对衬底对的方法。 本发明还涉及具有（110）取向的硅衬底和包括具有（100）取向的第一硅衬底和具有（110）取向的第二硅衬底的键合的一对硅衬底。 本发明的目的是提供高效率的上述类型的方法和基底，其中所形成的（110）基底至少具有接近和在其表面上几乎没有缺陷。 本发明的目的是通过制造具有（110）取向的硅衬底的方法和通过制造粘合的一对硅衬底的方法来解决的，包括以下步骤：提供具有（110）取向的碱性硅衬底，所述碱性硅衬底具有 在2×2μm2或10×10μm2扫描中的粗糙度等于或小于0.15nm RMS，并且在40Torr至120Torr之间的压力下，以（110）取向外延地在碱性硅衬底上沉积硅层， 优选为80托，温度为约1000℃至约1200℃，并使用三氯硅烷或二氯硅烷作为硅前体气体。

公开(公告)号：US07531430B2

公开(公告)日：2009-05-12

申请号：US11677179

申请日：2007-02-21

Applicant: Oleg Kononchuk

Inventor： Oleg Kononchuk

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/76254

Abstract: The invention relates to a process of treating a structure for electronics or optoelectronics, wherein the structure that has a substrate, a first oxide layer, an intermediate layer, a second oxide layer made of an oxide of a semiconductor material, and a thin semiconductor layer made of the semiconductor material. The process includes a heat treatment of the structure in an inert or reducing atmosphere with a temperature and a duration chosen for inciting an amount of oxygen of the second oxide layer to diffuse through the semiconductor layer so that the thickness of the second oxide layer decreases by a determined value. The invention also relates to a process of manufacturing a structure for electronics or optoelectronics through the use of this type of heat treatment.

Abstract translation: 本发明涉及一种处理电子或光电子学结构的方法，其中具有衬底，第一氧化物层，中间层，由半导体材料的氧化物制成的第二氧化物层的结构和薄的半导体层 由半导体材料制成。 该方法包括在惰性或还原性气氛中对具有温度和持续时间的结构进行热处理，所述温度和持续时间选择为使第二氧化物层的氧气量扩散通过半导体层，使得第二氧化物层的厚度减小 一个确定的价值。 本发明还涉及通过使用这种类型的热处理来制造电子或光电子结构的方法。

公开(公告)号：US07413964B2

公开(公告)日：2008-08-19

申请号：US11481691

申请日：2006-07-05

Applicant: Patrick Reynaud ,  Oleg Kononchuk ,  Christophe Maleville

Inventor： Patrick Reynaud ,  Oleg Kononchuk ,  Christophe Maleville

IPC: H01L21/30

CPC classification number: H01L21/324 ,  C30B29/06 ,  C30B33/00 ,  G01N21/9501

Abstract: This invention provides methods for predictively revealing, in bulk silicon substrates, latent crystalline defects in bulk silicon substrates that become apparent only after subsequent processing, e.g., after processing during which multiple layers are split and lifted from the bulk substrates. Preferred predictive methods include a revealing heat treatment of bulk substrates conducted in a non-reducing atmosphere at a temperature in the range from approximately 500° C. to 1300° C. If desired, a further revealing heat treatment or defect enlargement step can be performed to enlarge defects revealed by the first revealing heat treatment.

Abstract translation: 本发明提供了在体硅衬底中预测性地揭示体硅衬底中潜在晶体缺陷的方法，其仅在后续处理之后变得显而易见，例如在多层被分离并从大块衬底提起之后。 优选的预测方法包括在大约500℃至1300℃的温度范围内在非还原气氛中进行的散装衬底的显露热处理。如果需要，可以进一步显露热处理或缺陷扩大步骤 以扩大第一次显露热处理所揭示的缺陷。

公开(公告)号：US20080194084A1

公开(公告)日：2008-08-14

申请号：US11774201

申请日：2007-07-06

Applicant: Oleg Kononchuk ,  Fabrice Letertre ,  Robert Langer

Inventor： Oleg Kononchuk ,  Fabrice Letertre ,  Robert Langer

IPC: H01L21/20 ,  H01L29/04

CPC classification number: H01L21/76254

Abstract: The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions. The structure includes a support substrate, a top layer and an oxide layer between the support substrate and the top layer. The method includes providing a top layer made of a crystalline material, providing a support substrate of a polycrystalline material having heat dissipation properties greater than that of a bulk single crystal silicon substrate of the same dimensions; providing an oxide layer on at least one of the top layer or the support substrate; bonding the top layer and support substrate together to obtain a composite structure having the top layer, the support substrate and the oxide layer located at a bonding interface between the top layer and support substrate, and heat treating the composite structure in a non-oxidizing atmosphere at a predetermined temperature and for a predetermined duration to dissolve at least part of the oxide layer and increase the heat dissipation properties of the composite structure compared to the composite structure prior to the heat treating.

Abstract translation: 本发明涉及一种制造具有大于具有相同尺寸的体单晶硅结构的散热特性的复合结构的方法。 该结构包括在支撑基板和顶层之间的支撑基板，顶层和氧化物层。 该方法包括提供由结晶材料制成的顶层，提供具有大于相同尺寸的本体单晶硅衬底的散热特性的多晶材料的支撑衬底; 在顶层或支撑衬底中的至少一个上提供氧化物层; 将顶层和支撑衬底粘合在一起以获得具有位于顶层和支撑衬底之间的结合界面处的顶层，支撑衬底和氧化物层的复合结构，并且在非氧化性气氛中热处理复合结构 在预定温度和预定时间内溶解氧化物层的至少一部分，并且在热处理之前与复合结构相比增加了复合结构的散热性能。