METHOD OF FABRICATION OF HIGHLY HEAT DISSIPATIVE SUBSTRATES
    1.
    发明申请
    METHOD OF FABRICATION OF HIGHLY HEAT DISSIPATIVE SUBSTRATES 有权
    高热耗散基板的制造方法

    公开(公告)号:US20080194084A1

    公开(公告)日:2008-08-14

    申请号:US11774201

    申请日:2007-07-06

    IPC分类号: H01L21/20 H01L29/04

    CPC分类号: H01L21/76254

    摘要: The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions. The structure includes a support substrate, a top layer and an oxide layer between the support substrate and the top layer. The method includes providing a top layer made of a crystalline material, providing a support substrate of a polycrystalline material having heat dissipation properties greater than that of a bulk single crystal silicon substrate of the same dimensions; providing an oxide layer on at least one of the top layer or the support substrate; bonding the top layer and support substrate together to obtain a composite structure having the top layer, the support substrate and the oxide layer located at a bonding interface between the top layer and support substrate, and heat treating the composite structure in a non-oxidizing atmosphere at a predetermined temperature and for a predetermined duration to dissolve at least part of the oxide layer and increase the heat dissipation properties of the composite structure compared to the composite structure prior to the heat treating.

    摘要翻译: 本发明涉及一种制造具有大于具有相同尺寸的体单晶硅结构的散热特性的复合结构的方法。 该结构包括在支撑基板和顶层之间的支撑基板,顶层和氧化物层。 该方法包括提供由结晶材料制成的顶层,提供具有大于相同尺寸的本体单晶硅衬底的散热特性的多晶材料的支撑衬底; 在顶层或支撑衬底中的至少一个上提供氧化物层; 将顶层和支撑衬底粘合在一起以获得具有位于顶层和支撑衬底之间的结合界面处的顶层,支撑衬底和氧化物层的复合结构,并且在非氧化性气氛中热处理复合结构 在预定温度和预定时间内溶解氧化物层的至少一部分,并且在热处理之前与复合结构相比增加了复合结构的散热性能。

    Method of fabrication of highly heat dissipative substrates
    2.
    发明授权
    Method of fabrication of highly heat dissipative substrates 有权
    制造高散热衬底的方法

    公开(公告)号:US07452785B2

    公开(公告)日:2008-11-18

    申请号:US11774201

    申请日:2007-07-06

    IPC分类号: H01L21/00

    CPC分类号: H01L21/76254

    摘要: The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions. The structure includes a support substrate, a top layer and an oxide layer between the support substrate and the top layer. The method includes providing a top layer made of a crystalline material, providing a support substrate of a polycrystalline material having heat dissipation properties greater than that of a bulk single crystal silicon substrate of the same dimensions; providing an oxide layer on at least one of the top layer or the support substrate; bonding the top layer and support substrate together to obtain a composite structure having the top layer, the support substrate and the oxide layer located at a bonding interface between the top layer and support substrate, and heat treating the composite structure in a non-oxidizing atmosphere at a predetermined temperature and for a predetermined duration to dissolve at least part of the oxide layer and increase the heat dissipation properties of the composite structure compared to the composite structure prior to the heat treating.

    摘要翻译: 本发明涉及一种制造具有大于具有相同尺寸的体单晶硅结构的散热特性的复合结构的方法。 该结构包括在支撑基板和顶层之间的支撑基板,顶层和氧化物层。 该方法包括提供由结晶材料制成的顶层,提供具有大于相同尺寸的本体单晶硅衬底的散热特性的多晶材料的支撑衬底; 在顶层或支撑衬底中的至少一个上提供氧化物层; 将顶层和支撑衬底粘合在一起以获得具有位于顶层和支撑衬底之间的结合界面处的顶层,支撑衬底和氧化物层的复合结构,并且在非氧化性气氛中热处理复合结构 在预定温度和预定时间内溶解氧化物层的至少一部分,并且在热处理之前与复合结构相比增加了复合结构的散热性能。