摘要:
Inexpensive methods for producing small-sized monolithic electronic parts with improved functions by which an electroconductive film can be formed uniformly, thin, and in fine patterns on a ceramic green sheet, a carrier film, or a resin film, for example. A plurality of such ceramic green sheets, etc., each having the electroconductive film formed thereon, are laminated to give a ceramic laminate, which is then sintered. The electroconductive film is formed on each ceramic green sheet, etc., by the steps of: applying a hydrophilic liquid containing an activating catalyst comprising copper oxide, a palladium salt and an alkaline solution, for example, to thereby form a photosensitive film comprising said liquid containing said activating catalyst, exposing the photosensitive predetermined regions to thereby deposit palladium catalyst on said regions, washing out the non-exposed regions of the photosensitive film with water or a liquid consisting essentially of water, and dipping the ceramic green sheet having palladium catalyst deposited thereon in an electroless plating bath to thereby form the intended electroconductive film by electroless plating.
摘要:
A work piece is mixed with Ni pieces having an average diameter of 1 mm and exhibiting catalytic activity to oxidation reaction of sodium phosphinate (NaH2PO2) added as a reducing agent in a plating bath containing the reducing agent and a Ni salt to form a Ni—P film on an electrode made of Cu, Ag or Ag—Pd by auto-catalytic electroless plating. Then, the work piece is dipped in a plating bath containing an Au salt to form an Au film on the surface of the Ni—P film by substitutional electroless plating. This method is capable of forming a desired plating film only on a desired portion at a low cost.
摘要翻译:将工件与平均直径为1mm的Ni片混合,并且在含有还原剂的镀浴和Ni盐中显示出对作为还原剂加入的次膦酸钠(NaH 2 PO 2)的氧化反应的催化活性,形成Ni- 通过自动催化无电镀法在Cu,Ag或Ag-Pd制成的电极上的P膜。 然后,将工件浸入含有Au盐的镀浴中,通过替代无电镀在Ni-P膜的表面上形成Au膜。 该方法能够以低成本仅在期望的部分形成期望的镀膜。
摘要:
The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 &mgr;m or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.
摘要:
Provided is a semiconductive ceramic composition comprising a lanthanum cobalt oxide and having a negative resistance-temperature characteristic, which contains, as the side component, a chromium oxide in an amount of from about 0.005 to 30 mol % in terms of chromium, and also a semiconductive ceramic device comprising the composition. The device is usable for rush current inhibition, for motor start-up retardation and for halogen lamp protection, and is also usable in temperature-compensated crystal oscillators.
摘要:
A plurality of dielectric ceramic sheets having inner electrodes thereon are laminated and sintered. The ceramic sheets are made of a non-reducing dielectric material, and the inner electrodes are made of a base metal or a base metal alloy. After a binder removing step, the laminate is sintered in a mixed gas which contains either one or both of carbon dioxide with a purity of 99.9% or more and carbon monoxide with a purity of 99.9% or more as its main constituent and further contains hydrogen and oxygen with their densities regulated.
摘要:
A thin film of barium titanate is formed on a substrate by immersing the substrate in an aqueous solution containing barium ions and titanium alkoxide. The aqueous solution may contain not more than 20 vol % of one or more alkanolamines expressed by the general formula:HO(C.sub.n H.sub.2n)mNH.sub.3-mwhere n is not more than 10, and m=1, 2 or 3.
摘要:
A metallized ceramic structure includes a ceramic substrate preferably aluminum nitride and a metallic layer preferably tungsten bonded to the ceramic substrate. First and second mixture layers are formed between the ceramic substrate and the metallic layer to bond the ceramic substrate and the metallic layer. The first mixture layer is in contact with the ceramic substrate and the second mixture layer is in contact with the metallic layer. Each of the mixture layers includes a mixture of ceramic of the ceramic substrate and the metal of the metallic layer. The second mixture layer has a lower percentage of the ceramic than the first mixture layer.
摘要:
A method for producing non-reducible dielectric ceramics of the kind comprising a basic composition of a three component system BaTiO.sub.3 -CaTiO.sub.3 -CaZrO.sub.3 or a four component system BaTiO.sub.3 -CaTiO.sub.3 -CaZrO.sub.3 -MgTiO.sub.3 and containing additives composed of at least manganese oxide and silicon dioxide. The method comprises the steps of separately preparing calcined powders of at least three perovskite compounds including BaTiO.sub.3, CaTiO.sub.3 and CaZrO.sub.3, mixing the calcined powders to prepare a mixture for a basic composition, adding additives composed of at least manganese oxide and silicon dioxide to the mixtures for the basic composition, and then firing the resultant mixture in a reducing atmosphere. One of the oxides, magnesium oxide, calcium oxide, strontium oxide and barium oxide is additionally incorporated into the mixture for the basic composition together with manganese oxide and silicon dioxide.
摘要:
A monolithic ceramic capacitor which comprises a laminate composed of a plurality of dielectric ceramic layers and internal electrode layers provided between said dielectric ceramic layers, and external electrodes provided at both ends of said laminate and electrically connected to said internal electrode layers, said dielectric ceramic layer being a dielectric ceramic containing lead oxide and a reduction inhibitor and said internal electrode layer being copper or a copper alloy.
摘要:
Solid electrolytic substance comprises yttrium oxide (Y.sub.2 O.sub.3), silicon dioxide (SiO.sub.2) and zirconium oxide (ZrO.sub.2), and when represented by a general formula of aY.sub.2 O.sub.3 .multidot.bSiO.sub.2 (1-A-b)ZrO.sub.2, a and b are respectively within a range of 0.012.ltoreq.a.ltoreq.0.122 and 0.088.ltoreq.b.ltoreq.0.385, showing a thermal expansion coefficient close to that of non-electrolytic ceramic (alumina).
摘要翻译:固体电解质包括氧化钇(Y 2 O 3),二氧化硅(SiO 2)和氧化锆(ZrO 2),当由通式为Y 2 O 3 x bSiO 2(1-Ab)ZrO 2表示时,a和b分别在0.012 < = a = 0.122和0.088 = b = 0.385,显示接近非电解陶瓷(氧化铝)的热膨胀系数。