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    Leukemic cell-adsorbing material containing lectin protein from Agrocybe cylindracea or jequirity plant seed
    2.
    发明授权
    Leukemic cell-adsorbing material containing lectin protein from Agrocybe cylindracea or jequirity plant seed 失效
    含有Agrocybe cylindracea或jequirity植物豆种子的凝集素蛋白质的白血病细胞吸附材料

    公开(公告)号：US06420171B1

    公开(公告)日：2002-07-16

    申请号：US09549493

    申请日：2000-04-14

    申请人： Osamu Nakamura ,  Hideki Ohba ,  Imre Sallay ,  Fumio Yagi ,  Sawako Moriwaki ,  Seiji Yasuda

    发明人： Osamu Nakamura ,  Hideki Ohba ,  Imre Sallay ,  Fumio Yagi ,  Sawako Moriwaki ,  Seiji Yasuda

    IPC分类号： C12N506

    CPC分类号： C12N5/0093 ,  A61M1/3679 ,  A61M2202/0439 ,  C07K14/37 ,  C07K14/42 ,  C07K17/10 ,  Y10S530/812 ,  Y10S530/813

    摘要： An efficient method for therapeutic treatment of leukemia is provided in which a patient's body fluid during external circulation is brought into direct contact with an adsorbent material capable of specifically and selectively adsorbing leukemic cells in the body fluid. The leukemic cell-adsorbing material is a composite of a lectin protein coupled with a physiologically inert carrier material such as a galactan polysaccharide in the form of beads. The lectin protein may be obtained from a mushroom fungus such as Agrocybe cylindracea or a leguminous seed such as from the jequirity bean plant. The lectin protein and carrier material can be bound by forming chemical linkages between amino groups in the lectin protein and functional groups in the carrier material, and unreacted functional groups of the carrier material may be blocked with an amino acid. A leukemic cell-adsorbing column may be formed by filling the leukemic cell-adsorbing material into a tubular body to form an adsorbent bed. The tubular body may have an inner diameter of from 10 to 20 mm and a height of from 50 to 200 mm.

    摘要翻译： 提供了一种治疗白血病的有效方法，其中外部循环期间的患者体液与能够特异性和选择性地吸收体液中的白血病细胞的吸附材料直接接触。 白血病细胞吸附材料是凝集素蛋白与生理惰性载体材料如珠粒形式的半乳聚糖多糖的复合物。 凝集素蛋白质可以从蘑菇真菌如花椰菜（Agrocybe cylindracea）或豆科植物种子（例如来自不育豆）得到。 凝集素蛋白质和载体材料可以通过在凝集素蛋白中的氨基和载体材料中的官能团之间形成化学键而结合，载体材料的未反应的官能团可以用氨基酸封闭。 可以通过将白血病细胞吸附材料填充到管状体中以形成吸附床来形成白血病细胞吸附柱。 管状体的内径可以为10〜20mm，高度为50〜200mm。

    Leukemic cell growth inhibiting method
    3.
    发明授权
    Leukemic cell growth inhibiting method 失效

    公开(公告)号：US06465512B2

    公开(公告)日：2002-10-15

    申请号：US09733947

    申请日：2000-12-12

    申请人： Osamu Nakamura ,  Yoko Fuke ,  Hideki Ohba ,  Seiji Yasuda

    发明人： Osamu Nakamura ,  Yoko Fuke ,  Hideki Ohba ,  Seiji Yasuda

    IPC分类号： A61K3126

    CPC分类号： A61K31/26 ,  Y10S514/885 ,  Y10S514/908

    摘要： Disclosed is a method for growth inhibition of human leukemic cells or therapeutic treatment method of a leukemic patient by using a medicament of which the effective ingredient is a methylsulfinylalkyl isothiocyanate such as 4-(methylsulfinyl)butyl isothiocyanate and 6-(methylsulfinyl)hexyl isothiocyanate, which can be prepared by extraction from the tissues of certain plants and can induce apoptosis in human leukemic cells. This medicament compound is little growth-inhibitive against normal cells as compared with leukemic cells, so that a remarkable therapeutic effect can be expected.

    Method of manufacturing a semiconductor device
    4.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US4403392A

    公开(公告)日：1983-09-13

    申请号：US152305

    申请日：1980-05-22

    申请人： Jiro Oshima ,  Masaharu Aoyama ,  Seiji Yasuda ,  Toshio Yonezawa

    发明人： Jiro Oshima ,  Masaharu Aoyama ,  Seiji Yasuda ,  Toshio Yonezawa

    IPC分类号： H01L29/43 ,  H01L21/225 ,  H01L21/28 ,  H01L21/321 ,  H01L23/522 ,  H01L23/532

    CPC分类号： H01L23/53271 ,  H01L21/2257 ,  H01L21/28 ,  H01L21/321 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/92

    摘要： A method for manufacturing a semiconductor device having a high breakdown voltage and a high reliability, comprises (a) forming on a semiconductor substrate an insulating layer having a diffusion window; (b) forming an impurity-doped poly-silicon layer on the insulating layer and on that portion of the semiconductor substrate which is exposed through the diffusion window; (c) forming an undoped poly-silicon layer on the impurity-doped poly-silicon layer; (d) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer and undoped poly-silicon layer, thus diffusing the impurity from the impurity-doped poly-silicon layer into the semiconductor substrate through the diffusion window and converting the undoped poly-silicon layer to a silicon oxide layer; (e) forming on the silicon oxide layer an oxidation-resisting mask layer in a desired pattern; and (f) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer, silicon oxide layer and mask layer, thus converting those portions of the impurity-doped poly-silicon layer which lie beneath those portions of the silicon oxide layer which are exposed through the mask layer to impurity-doped silicon oxide layers, whereby the remaining portions of the impurity-doped poly-silicon layer provide an interconnection electrode layer having a desired pattern.

    摘要翻译： 一种制造具有高击穿电压和高可靠性的半导体器件的方法，包括：（a）在半导体衬底上形成具有扩散窗的绝缘层; （b）在绝缘层上形成掺杂杂质的多晶硅层，以及通过扩散窗露出的部分半导体衬底; （c）在杂质掺杂的多晶硅层上形成未掺杂的多晶硅层; （d）用绝缘层，杂质掺杂的多晶硅层和未掺杂的多晶硅层热氧化衬底，从而通过扩散窗将杂质从杂质掺杂的多晶硅层扩散到半导体衬底中，并将 未掺杂的多晶硅层到氧化硅层; （e）在所述氧化硅层上形成所需图案的抗氧化掩模层; 和（f）用绝缘层，杂质掺杂的多晶硅层，氧化硅层和掩模层热氧化衬底，从而转换位于氧化硅部分之下的杂质掺杂多晶硅层的那些部分 层，其通过掩模层暴露于杂质掺杂的氧化硅层，由此杂质掺杂多晶硅层的剩余部分提供具有期望图案的互连电极层。

    Evaluation method for semiconductor device
    5.
    发明授权
    Evaluation method for semiconductor device 失效
    半导体器件的评估方法

    公开(公告)号：US4968932A

    公开(公告)日：1990-11-06

    申请号：US251601

    申请日：1988-09-30

    申请人： Yoshiro Baba ,  Yutaka Koshino ,  Seiji Yasuda

    发明人： Yoshiro Baba ,  Yutaka Koshino ,  Seiji Yasuda

    IPC分类号： G01R19/00 ,  G01R31/26 ,  G01R31/265 ,  G01R31/311 ,  H01L21/66

    CPC分类号： G01R31/2656 ,  G01R31/2608 ,  G01R31/311

    摘要： An evaluation method for a semiconductor device includes the steps of applying a reverse bias voltage between an N-type substrate formed in a surface of the semiconductor device and a P-type region formed in a surface of the N-type substrate to form a depletion layer along the junction therebetween, scanning the surface of the semiconductor device is one direction with a light beam to cause an optical beam induced current to be flow across the junction, and measuring the OBIC intensity profile on a scanning line extending across the depletion layer in the surfaces of the N-type substrate and P-type region. In the method, the light beam has a wavelength whose penetration length is smaller than the depth or thickness of the P-type region, the OBIC intensity profile is integrated over a range corresponding to the depletion layer, and the integrated value is normalized by the reverse bias voltage to determine the surface potential distribution of the semiconductor device.

    Semiconductor device and method for manufacturing the same
    6.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US4566174A

    公开(公告)日：1986-01-28

    申请号：US545545

    申请日：1983-10-26

    申请人： Seiji Yasuda ,  Yutaka Koshino ,  Toshio Yonezawa

    发明人： Seiji Yasuda ,  Yutaka Koshino ,  Toshio Yonezawa

    IPC分类号： H01L27/082 ,  H01L21/20 ,  H01L21/74 ,  H01L21/761 ,  H01L21/8224 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/76

    CPC分类号： H01L21/74 ,  H01L21/8224 ,  H01L21/82285 ,  H01L21/8238 ,  H01L27/0826 ,  Y10S148/05

    摘要： A method of manufacturing a semiconductor device wherein a pair of grooves having different depths are formed in a surface of a semiconductor substrate, an epitaxial layer of one conductivity type is grown to a depth enough to fill a shallower one of the grooves, and an epitaxial layer of the opposite conductivity type is further grown to a depth enough to fill a deeper one of the grooves, followed by the step of etching the entire surface to expose the surface of said semiconductor substrate and to leave in each groove an epitaxial layer of mutually different conductivity type and having the same depth and width. A semiconductor device as manufactured by the above method.

    摘要翻译： 一种制造半导体器件的方法，其中在半导体衬底的表面中形成具有不同深度的一对沟槽，一个导电类型的外延层生长到足以填充较浅的一个沟槽的深度，并且外延 相反导电类型的层进一步生长到足以填充更深的一个沟槽的深度，接着是蚀刻整个表面以暴露所述半导体衬底的表面并且在每个沟槽中留下相互的外延层的步骤 不同的导电类型，具有相同的深度和宽度。 通过上述方法制造的半导体器件。

    Method for the disposal of waste water containing iron-cyanide complexes
    8.
    发明授权
    Method for the disposal of waste water containing iron-cyanide complexes 失效
    处理含有氰化铁配合物的废水的方法

    公开(公告)号：US4530768A

    公开(公告)日：1985-07-23

    申请号：US577354

    申请日：1984-02-06

    申请人： Koichi Tanihara ,  Keiko Tamai ,  Seiji Yasuda

    发明人： Koichi Tanihara ,  Keiko Tamai ,  Seiji Yasuda

    IPC分类号： C02F9/00 ,  C02F1/70

    CPC分类号： C02F1/5245 ,  C02F2101/18 ,  Y10S210/904

    摘要： The invention provides an improvement in the disposal of a waste water coining iron-cyanide complexes including ferricyanides by the reduction of the ferricyanide ions into ferrocyanide in the presence of a zinc salt to precipitate the ferrocyanide ions in the form of zinc ferrocyanide. The improvement comprises the use of a sulfite, e.g. sodium sulfite, and a thiosulfate, e.g. sodium thiosulfate, in combination as the reducing agent whereby the reduction of the ferricyanide ions is complete within a relatively short time without being affected by the atmospheric oxygen or other factors.

    摘要翻译： 本发明通过在锌盐存在下将铁氰化物离子还原成亚铁氰化物，使包含铁氰化物的氰化铁络合物的废水的处理得到改进，以亚铁氰化锌的形式沉淀亚铁氰化物离子。 改进之处在于使用亚硫酸盐，例如 亚硫酸钠和硫代硫酸盐，例如 硫代硫酸钠，作为还原剂组合，由此铁氰化物离子的还原在相对短的时间内完成，而不受大气氧或其它因素的影响。