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公开(公告)号：US20240292121A1
公开(公告)日：2024-08-29
申请号：US18649584
申请日：2024-04-29
Inventor： Yasuo MIYAKE , Masashi MURAKAMI , Tokuhiko TAMAKI , Yoshiaki SATOU
IPC: H04N25/53 , H01L27/146 , H10K39/32
CPC classification number: H04N25/53 , H01L27/14609 , H01L27/14612 , H10K39/32
Abstract: An imaging device including pixels each including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The imaging device further including voltage supply circuitry, where the voltage supply circuitry supplies a first potential difference between the first electrode and the second electrode in an exposure period and a second potential difference between the first electrode and the second electrode in a non-exposure period, and the first potential difference is different from the second potential difference.
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公开(公告)号：US20230253424A1
公开(公告)日：2023-08-10
申请号：US18300928
申请日：2023-04-14
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yasuo MIYAKE , Yasunori INOUE
IPC: H01L27/146 , H01L27/142 , H01L31/14 , H10K39/32
CPC classification number: H01L27/1461 , H01L27/142 , H01L31/143 , H01L27/14665 , H01L27/14601 , H01L27/14609 , H10K39/32 , H04N25/76
Abstract: A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.
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公开(公告)号：US20230154944A1
公开(公告)日：2023-05-18
申请号：US18096296
申请日：2023-01-12
Inventor： Junji HIRASE , Masashi MURAKAMI
IPC: H01L27/146 , G02B7/04 , H04N25/65 , H04N25/70 , H04N25/75 , H04N25/77 , H04N25/771
CPC classification number: H01L27/14603 , H01L27/14689 , G02B7/04 , H01L27/14609 , H04N25/65 , H04N25/70 , H04N25/75 , H04N25/77 , H04N25/771 , G02B13/16
Abstract: An imaging device including a pixel including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion film between the first electrode and the second electrode, the photoelectric conversion film converting light into a charge; a first transistor having a first source, drain and gate, the first gate connected to the first electrode; and a second transistor having a second source and drain, one of the second source and the second drain connected to the first electrode and being a charge accumulation region that accumulates the charge. The imaging device further including a first voltage supply circuit supplying a first voltage to the second electrode, where the second transistor has a characteristic that when a voltage of the charge accumulation region is equal to or greater than a clipping voltage, the second transistor is turned off, and the clipping voltage is lower than the first voltage.
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公开(公告)号：US20230097274A1
公开(公告)日：2023-03-30
申请号：US18077127
申请日：2022-12-07
Inventor： Sanshiro SHISHIDO , Masashi MURAKAMI , Kazuko NISHIMURA
IPC: H01L27/146 , H04N5/355 , H04N5/374 , H04N5/378 , H04N5/225
Abstract: An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.
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5.发明申请公开(公告)号：US20200036915A1
公开(公告)日：2020-01-30
申请号：US16595292
申请日：2019-10-07
Inventor： Shinichi MACHIDA , Masashi MURAKAMI , Takeyoshi TOKUHARA , Masaaki YANAGIDA , Sanshiro SHISHIDO , Manabu NAKATA , Masumi IZUCHI
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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Patent Agency Ranking
公开(公告)号：US20190313040A1
公开(公告)日：2019-10-10
申请号：US16447148
申请日：2019-06-20
Inventor： Kazuko NISHIMURA , Tokuhiko TAMAKI , Masashi MURAKAMI
IPC: H04N5/369 , H04N5/378 , H01L27/146 , H04N5/363 , H04N5/3745 , H04N5/359
Abstract: An imaging device comprising: a first pixel cell including a first photoelectric converter generating a first signal, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and a first circuit coupled to the first electrode and detecting the first signal; and a second pixel cell including a second photoelectric converter generating a second signal, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and a second circuit coupled to the second electrode and detecting the second signal. A sensitivity of the first pixel cell is higher than that of the second pixel cell. A circuit configuration of the first circuit is different from that of the second circuit. The first circuit includes a feedback circuit configured to negatively feed back a voltage of the first electrode to the first electrode.
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7.发明申请SOLID-STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME, AND IMAGING APPARATUS 有权固态成像装置，其驱动方法和成像装置公开(公告)号：US20150076327A1
公开(公告)日：2015-03-19
申请号：US14554038
申请日：2014-11-26
Inventor： Hiroyuki AMIKAWA , Masashi MURAKAMI
IPC: H01L27/148 , H01L27/146
CPC classification number: H01L27/14831 , H01L27/14612 , H04N5/355 , H04N5/3698 , H04N5/3741
Abstract: A solid-state imaging apparatus includes a plurality of pixel cells arranged in a pixel array unit, a vertical signal line and a pixel power supply line each connected to a source electrode and a drain electrode of an amplifying transistor, a Pch transistor for supplying potential AVDD to the vertical signal line, a Pch transistor for supplying potential PBIAS_H higher than the potential AVDD to the vertical signal line, a Pch transistor for supplying the potential PBIAS_H to the pixel power supply line, wherein while the transfer transistor is turned ON and transfers signal charges photoelectrically converted by a photodiode to the floating diffusion portion, the Pch transistors are turned ON and the potential PBIAS_H is applied to the vertical signal line and the pixel power supply line.
Abstract translation: 固态成像装置包括排列在像素阵列单元中的多个像素单元，垂直信号线和每个连接到放大晶体管的源电极和漏电极的像素电源线，用于提供电位的Pch晶体管 对垂直信号线的AVDD，用于向垂直信号线提供高于电位AVDD的电位PBIAS_H的Pch晶体管，用于将电位PBIAS_H提供给像素电源线的Pch晶体管，其中当转移晶体管导通并转移时 信号电荷由光电二极管光电转换成浮动扩散部分，Pch晶体管导通，电位PBIAS_H施加到垂直信号线和像素电源线。
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公开(公告)号：US20240387570A1
公开(公告)日：2024-11-21
申请号：US18787407
申请日：2024-07-29
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H10K30/00
Abstract: A camera system including a lens; and an imaging device that receives a light through the lens. The imaging device includes: a semiconductor substrate; a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first state and a second state, a sensitivity in the first state being different from a sensitivity in the second state, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
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公开(公告)号：US20240313012A1
公开(公告)日：2024-09-19
申请号：US18671434
申请日：2024-05-22
Inventor： Sanshiro SHISHIDO , Masashi MURAKAMI , Kazuko NISHIMURA
IPC: H01L27/146 , H04N23/50 , H04N23/55 , H04N25/57 , H04N25/585 , H04N25/75 , H04N25/76
CPC classification number: H01L27/14612 , H01L27/14609 , H01L27/14627 , H01L27/14643 , H04N25/57 , H04N25/585 , H04N25/75 , H04N25/76 , H04N23/50 , H04N23/55
Abstract: An imaging device including a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; and a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion. The area of the second photoelectric converter is greater than the area of the first photoelectric converter in a plan view, and the number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than the number of saturation charges of a second imaging cell including the second photoelectric converter.
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公开(公告)号：US20240297200A1
公开(公告)日：2024-09-05
申请号：US18659863
申请日：2024-05-09
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yasuo MIYAKE , Yasunori INOUE
IPC: H01L27/146 , H01L27/142 , H01L31/14 , H04N25/571 , H04N25/76 , H04N25/77 , H10K30/80 , H10K39/32 , H10K50/80
CPC classification number: H01L27/14665 , H01L27/142 , H01L27/14601 , H01L27/14609 , H01L27/1461 , H01L31/143 , H10K39/32 , H04N25/571 , H04N25/76 , H04N25/77 , H10K30/80 , H10K50/80
Abstract: An imaging device including a photoelectric convertor that includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which a rate of change of the photoelectric conversion efficiency of the photoelectric convertor with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a first voltage is applied to the first electrode or the second electrode so that a bias voltage between the first electrode and the second electrode exists in the first voltage range.
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