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    High quality factor, integrated inductor and production method thereof
    2.
    发明授权
    High quality factor, integrated inductor and production method thereof 有权
    高品质因素，集成电感及其制作方法

    公开(公告)号：US06437418B1

    公开(公告)日：2002-08-20

    申请号：US09170914

    申请日：1998-10-13

    申请人： Paolo Ferrari ,  Armando Manfredi ,  Benedetto Vigna

    发明人： Paolo Ferrari ,  Armando Manfredi ,  Benedetto Vigna

    IPC分类号： H01L2900

    CPC分类号： H01L28/10 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

    摘要翻译： 集成电感器包括形成在第二金属层中的金属线圈。 线圈由通过去除在第一金属层中形成的牺牲区域而获得的气隙的由半导体材料体间隔开延伸的支架支撑。 托架由半导体材料体通过支撑区域承载，该支撑区域周向地布置在支架上并且通过连接到气隙的孔彼此分离。 厚氧化物区域在半导体材料体的上方延伸到气隙下方，以减小电感器和半导体材料体之间的电容耦合。 因此，电感器具有高品质因素，并且通过与当前微电子工艺兼容的工艺来产生。

    Head for reading magnetically stored data
    3.
    发明授权
    Head for reading magnetically stored data 失效
    读磁头用于读取磁存储数据

    公开(公告)号：US06532130B1

    公开(公告)日：2003-03-11

    申请号：US09116406

    申请日：1998-07-16

    申请人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

    发明人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

    IPC分类号： G11B5596

    CPC分类号： G11B5/3922 ,  G11B5/2654 ,  G11B5/3103 ,  G11B5/3183 ,  G11B5/3948 ,  G11B5/3958 ,  G11B5/4886 ,  G11B5/5526 ,  G11B5/553

    摘要： A head (130) for a disk storage device having a plurality of tracks (117) divided into memory cells (234), including a magnetic circuit (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) in succession, the magnetic circuit (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) including at least two partial reading components (206a, 230a, 250a; 206b, 230b, 250b) each for reading a portion (234a; 234b) of each memory cell (234), the portions (234a; 234b) being arranged transversely relative to the longitudinal axis (233) of the corresponding track (117).

    摘要翻译： 一种用于盘存储装置的磁头（130），其具有分成存储单元（234）的多个磁道（117），包括用于读取存储单元（234）的磁路（205,230a，230b，250a，250b） 用于读取包括至少两个部分读取组件（206a，230a，250a; 206b，230b，250b）的存储单元（234）的磁路（205,230a，230b，250a，250b） 234a，234b），所述部分（234a; 234b）相对于对应轨道（117）的纵向轴线（233）横向设置。

    Method for manufacturing a microintegrated structure with buried connections, in particular an integrated microactuator for a hard-disk drive unit
    5.
    发明授权
    Method for manufacturing a microintegrated structure with buried connections, in particular an integrated microactuator for a hard-disk drive unit 有权

    公开(公告)号：US06610556B2

    公开(公告)日：2003-08-26

    申请号：US10124781

    申请日：2002-04-16

    申请人： Benedetto Vigna ,  Paolo Ferrari

    发明人： Benedetto Vigna ,  Paolo Ferrari

    IPC分类号： H01L2100

    CPC分类号： H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

    摘要： The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

    Method for manufacturing a microintegrated structure with buried connections, in particular an integrated microactuator for a hard-disk drive unit
    6.
    发明授权
    Method for manufacturing a microintegrated structure with buried connections, in particular an integrated microactuator for a hard-disk drive unit 有权

    公开(公告)号：US06396174B1

    公开(公告)日：2002-05-28

    申请号：US09523571

    申请日：2000-03-10

    申请人： Benedetto Vigna ,  Paolo Ferrari

    发明人： Benedetto Vigna ,  Paolo Ferrari

    IPC分类号： H01L2174

    CPC分类号： H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

    摘要： The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

    Integrated angular speed sensor device and production method thereof
    7.
    发明授权
    Integrated angular speed sensor device and production method thereof 有权
    一体式角速度传感器装置及其制造方法

    公开(公告)号：US06209394B1

    公开(公告)日：2001-04-03

    申请号：US09178285

    申请日：1998-10-23

    申请人： Paolo Ferrari ,  Benedetto Vigna ,  Aurea Cuccia ,  Marco Ferrera ,  Pietro Montanini

    发明人： Paolo Ferrari ,  Benedetto Vigna ,  Aurea Cuccia ,  Marco Ferrera ,  Pietro Montanini

    IPC分类号： G01P904

    CPC分类号： G01C19/574 ,  G01C19/5769 ,  G01P15/0802 ,  H01L21/76202 ,  H01L21/764

    摘要： An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

    摘要翻译： 角速度传感器包括一对移动质量块，其形成在外延层中并且通过锚定元件锚固到装置的其余部分。 移动质量彼此对称，并且具有插入有第一固定激励电极的第一移动激励电极和插入第二固定检测电极的第二移动检测电极。 第一移动和固定激励电极沿第一方向延伸，并且第二移动和固定检测电极在垂直于第一方向的第二方向上延伸并且设置在平行于装置表面的单个平面上。

    Electromagnetic head with magnetoresistive means connected to a magnetic core
    9.
    发明授权
    Electromagnetic head with magnetoresistive means connected to a magnetic core 失效
    具有连接到磁芯的磁阻装置的电磁头

    公开(公告)号：US06134088A

    公开(公告)日：2000-10-17

    申请号：US109117

    申请日：1998-07-02

    申请人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

    发明人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33

    CPC分类号： G11B5/3925 ,  G11B5/3183

    摘要： An electromagnetic head for a storage device comprises a magnetic core forming a magnetic circuit, and a magnetoresistive means. The magnetic core is interrupted by an air-gap, thereby separating a first pole and second pole of the magnetic core. The magnetoresistive means is disposed in the region of the air-gap, and is connected to the magnetic core so as to be connected in the magnetic circuit.

    摘要翻译： 用于存储装置的电磁头包括形成磁路的磁芯和磁阻装置。 磁芯被气隙中断，从而分离磁芯的第一极和第二极。 磁阻装置设置在气隙的区域中，并且与磁芯连接以便连接在磁路中。

    Semiconductor integrated capacitive acceleration sensor and relative fabrication method
    10.
    发明授权
    Semiconductor integrated capacitive acceleration sensor and relative fabrication method 失效
    半导体集成电容式加速度传感器及相关制造方法

    公开(公告)号：US6104073A

    公开(公告)日：2000-08-15

    申请号：US903511

    申请日：1997-07-30

    申请人： Paolo Ferrari ,  Mario Foroni ,  Benedetto Vigna ,  Flavio Villa

    发明人： Paolo Ferrari ,  Mario Foroni ,  Benedetto Vigna ,  Flavio Villa

    IPC分类号： G01P15/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  H01L29/82 ,  H01L21/00 ,  H01L27/01 ,  H01L27/20

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： The acceleration sensor is formed in a monocrystalline silicon wafer forming part of a dedicated SOI substrate presenting a first and second monocrystalline silicon wafer separated by an insulting layer having an air gap. A well is formed in the second wafer over the air gap and is subsequently trenched up to the air gap to release the monocrystalline silicon mass forming the movable mass of the sensor; the movable mass has two numbers of movable electrodes facing respective pluralities of fixed electrodes. In the idle condition, each movable electrode is separated by different distances from the two fixed electrodes facing the movable electrode.

    摘要翻译： 加速度传感器形成在形成由具有气隙的绝缘层分离的第一和第二单晶硅晶片的专用SOI衬底的一部分的单晶硅晶片中。 在空气间隙中的第二晶片中形成一个阱，然后将其向上延伸到气隙以释放形成传感器的可移动质量块的单晶硅质量块; 可移动物体具有面对多个固定电极的两个可动电极数。 在空闲状态下，每个可移动电极与面对可动电极的两个固定电极分开不同的距离。