Process for selectively depositing copper aluminum alloy onto a substrate
    8.
    发明授权
    Process for selectively depositing copper aluminum alloy onto a substrate 失效
    将铜铝合金选择性沉积到基底上的工艺

    公开(公告)号:US5273775A

    公开(公告)日:1993-12-28

    申请号:US867599

    申请日:1992-04-13

    摘要: An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.

    摘要翻译: 提供了一种改进的方法,用于在图案化的硅衬底上沉积薄的铜铝合金膜。 最初在衬底的表面上形成符合现有图案的铜基底层,然后与胺铝化合物的蒸气接触,这导致铝被选择性地沉积在基底的铜基底层部分上。 优选地,使用化学气相沉积从铜(I)全氟烷基-β-二酮络合物和烯烃或甲硅烷基烯烃复合物将铜施加到扩散阻挡表面,例如钨。 开发合金膜的整个过程可以不超过200℃进行。