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    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
    3.
    发明授权
    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
    采用自对准整流元件的纳米级存储器件及其制造方法

    公开(公告)号：US07335579B2

    公开(公告)日：2008-02-26

    申请号：US11331697

    申请日：2006-01-12

    申请人： James Stasiak ,  Kevin F Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    发明人： James Stasiak ,  Kevin F Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    IPC分类号： H01L21/20

    CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/24 ,  Y10S977/887 ,  Y10S977/94

    摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

    摘要翻译： 一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。 每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。 每个器件结构具有小于约75纳米的至少一个横向尺寸。 存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。 此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
    4.
    发明授权
    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
    采用自对准整流元件的纳米级存储器件及其制造方法

    公开(公告)号：US07034332B2

    公开(公告)日：2006-04-25

    申请号：US10765799

    申请日：2004-01-27

    申请人： James Stasiak ,  Kevin F Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    发明人： James Stasiak ,  Kevin F Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    IPC分类号： H01L35/24

    CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/24 ,  Y10S977/887 ,  Y10S977/94

    摘要： A memory device including a substrate, and multiple self-alignednano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

    摘要翻译： 一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。 每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。 每个器件结构具有小于约75纳米的至少一个横向尺寸。 存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。 此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

    Use of expanding material oxides for nano-fabrication
    9.
    发明申请
    Use of expanding material oxides for nano-fabrication 有权
    使用膨胀材料氧化物进行纳米制造

    公开(公告)号：US20070010101A1

    公开(公告)日：2007-01-11

    申请号：US11174798

    申请日：2005-07-05

    申请人： Peter Mardilovich ,  Pavel Kornilovich ,  Randy Hoffman

    发明人： Peter Mardilovich ,  Pavel Kornilovich ,  Randy Hoffman

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： B82Y10/00 ,  B81B1/00 ,  B81B2203/0361 ,  Y10S977/70

    摘要： This invention relates to a method of fabricating nano-dimensional structures, comprising: depositing at least one deformable material upon a substrate such that the material includes at least one portion; and creating an oxidizable layer located substantially adjacent to the deposited deformable material such that at least a portion of the oxidized portion of the oxidizable layer interacts with the at least one portion of the deformable material to apply a localized pressure upon the at least one portion of the deformable material.

    摘要翻译： 本发明涉及一种制造纳米尺寸结构的方法，包括：将至少一种可变形材料沉积在基底上，使得该材料包括至少一部分; 以及产生基本上与所沉积的可变形材料相邻的可氧化层，使得可氧化层的氧化部分的至少一部分与可变形材料的至少一部分相互作用以将局部压力施加到至少一部分 可变形材料。