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公开(公告)号：US08695501B2
公开(公告)日：2014-04-15
申请号：US11046321
申请日：2005-01-28
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a contact printing stamp, including creating a stamp material in a plurality of recessed regions formed in an exposed end-region of a multilayer thin film structure. The stamp material having a printing surface adapted to transfer a transfer material.
摘要翻译： 一种形成接触印刷印模的方法，包括在形成在多层薄膜结构的暴露端部区域中的多个凹陷区域中形成印模材料。 印模材料具有适于转印转印材料的印刷表面。
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公开(公告)号：US07374968B2
公开(公告)日：2008-05-20
申请号：US11046107
申请日：2005-01-28
IPC分类号： H01L21/00
CPC分类号： H05K3/1275 , H05K2203/0108 , H05K2203/0113 , H05K2203/0338 , Y10T428/2936
摘要： A method of using a contact printing stamp, including forming a transfer material on a plurality of stamping surfaces. The plurality of stamping surfaces are disposed on a plurality of stamp protrusions adapted from the forming of a stamp material in a plurality of recessed regions formed in an exposed end-region of a multilayer thin film structure.
摘要翻译： 一种使用接触印刷印模的方法，包括在多个冲压表面上形成转印材料。 多个冲压表面设置在多个印模突起上，该多个印模突起适于在多层薄膜结构的暴露端区形成的多个凹陷区域中形成印模材料。
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公开(公告)号：US20070182015A1
公开(公告)日：2007-08-09
申请号：US11460598
申请日：2006-07-27
IPC分类号： H01L23/48
CPC分类号： C25D1/04 , C25D1/10 , C25D1/20 , H01L2924/0002 , Y10S977/755 , Y10S977/762 , H01L2924/00
摘要： This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
摘要翻译： 本公开涉及一种用于产生纳米线的系统和方法。 可以通过在超晶格中暴露材料层并将材料从暴露层的边缘溶解并转移到衬底上来产生纳米线。 还可以通过在超晶格中暴露材料层并将材料沉积到暴露层的边缘上来产生纳米线。
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公开(公告)号：US07223611B2
公开(公告)日：2007-05-29
申请号：US10683527
申请日：2003-10-07
IPC分类号： H01L21/00
CPC分类号： C25D1/04 , C25D1/10 , C25D1/20 , H01L2924/0002 , Y10S977/755 , Y10S977/762 , H01L2924/00
摘要： This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
摘要翻译： 本公开涉及一种用于产生纳米线的系统和方法。 可以通过在超晶格中暴露材料层并将材料从暴露层的边缘溶解并转移到衬底上来产生纳米线。 还可以通过在超晶格中暴露材料层并将材料沉积到暴露层的边缘上来产生纳米线。
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公开(公告)号：US20060194420A1
公开(公告)日：2006-08-31
申请号：US11068363
申请日：2005-02-28
IPC分类号： H01L21/20
CPC分类号： C23C14/042 , C23C14/081 , C23C14/165 , H01L21/768 , H01L21/76802 , H01L23/5283 , H01L2924/0002 , H05K3/048 , Y10S148/026 , Y10S977/932 , H01L2924/00
摘要： This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
摘要翻译： 本公开描述了实现多层膜的单个纳米级厚度层的接触的系统和/或方法。
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公开(公告)号：US07407738B2
公开(公告)日：2008-08-05
申请号：US10817729
申请日：2004-04-02
IPC分类号： G03F7/00
CPC分类号： H01L21/76838 , C23C4/123 , C23C4/18 , C30B29/68 , G03F7/40 , H01L21/4846 , H05K3/20 , H05K3/205 , H05K2203/0117 , H05K2203/025
摘要： This disclosure relates to a system and method for fabricating and using a superlattice. A superlattice can be fabricated by applying alternating material layers on a ridge and then removing some of the alternating layers to expose edges. These exposed edges can be of nearly arbitrary length and curvature. These edges can be used to fabricate an array of nano-scale-width curved wires.
摘要翻译： 本公开涉及一种用于制造和使用超晶格的系统和方法。 可以通过在脊上施加交替材料层然后去除一些交替层以暴露边缘来制造超晶格。 这些暴露的边缘可以具有几乎任意的长度和曲率。 这些边缘可用于制造纳米尺度曲线的阵列。
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公开(公告)号：US20070010101A1
公开(公告)日：2007-01-11
申请号：US11174798
申请日：2005-07-05
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： B82Y10/00 , B81B1/00 , B81B2203/0361 , Y10S977/70
摘要： This invention relates to a method of fabricating nano-dimensional structures, comprising: depositing at least one deformable material upon a substrate such that the material includes at least one portion; and creating an oxidizable layer located substantially adjacent to the deposited deformable material such that at least a portion of the oxidized portion of the oxidizable layer interacts with the at least one portion of the deformable material to apply a localized pressure upon the at least one portion of the deformable material.
摘要翻译： 本发明涉及一种制造纳米尺寸结构的方法，包括：将至少一种可变形材料沉积在基底上，使得该材料包括至少一部分; 以及产生基本上与所沉积的可变形材料相邻的可氧化层，使得可氧化层的氧化部分的至少一部分与可变形材料的至少一部分相互作用以将局部压力施加到至少一部分 可变形材料。
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公开(公告)号：US20060169160A1
公开(公告)日：2006-08-03
申请号：US11046321
申请日：2005-01-28
IPC分类号： B41F33/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a contact printing stamp, including creating a stamp material in a plurality of recessed regions formed in an exposed end-region of a multilayer thin film structure. The stamp material having a printing surface adapted to transfer a transfer material.
摘要翻译： 一种形成接触印刷印模的方法，包括在形成在多层薄膜结构的暴露端部区域中的多个凹陷区域中形成印模材料。 印模材料具有适于转印转印材料的印刷表面。
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公开(公告)号：US20060003267A1
公开(公告)日：2006-01-05
申请号：US11215985
申请日：2005-08-31
IPC分类号： G03C5/00
CPC分类号： H01L21/76838 , C23C4/123 , C23C4/18 , C30B29/68 , G03F7/40 , H01L21/4846 , H05K3/20 , H05K3/205 , H05K2203/0117 , H05K2203/025
摘要： In one embodiment, a method for fabricating a nano-structure includes forming a feature on a substrate, depositing multiple layers of material over the substrate and feature to form a multi-layer stack, depositing a film over the multi-layer stack, removing a portion of the film and the multi-layer stack to expose edges of the layers of material, and removing portions of the layers of material to form trenches at a surface of the nano-structure.
摘要翻译： 在一个实施例中，用于制造纳米结构的方法包括在衬底上形成特征，在衬底上沉积多层材料并且特征以形成多层堆叠，在多层堆叠上沉积膜， 膜和多层叠层的部分以暴露材料层的边缘，以及去除材料层的部分以在纳米结构的表面形成沟槽。
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公开(公告)号：US20050221235A1
公开(公告)日：2005-10-06
申请号：US10817729
申请日：2004-04-02
IPC分类号： C23C4/12 , C23C4/18 , C30B29/68 , G03F7/00 , G03F7/40 , H01L21/00 , H01L21/48 , H01L21/768 , H05K3/20
CPC分类号： H01L21/76838 , C23C4/123 , C23C4/18 , C30B29/68 , G03F7/40 , H01L21/4846 , H05K3/20 , H05K3/205 , H05K2203/0117 , H05K2203/025
摘要： This disclosure relates to a system and method for fabricating and using a superlattice. A superlattice can be fabricated by applying alternating material layers on a ridge and then removing some of the alternating layers to expose edges. These exposed edges can be of nearly arbitrary length and curvature. These edges can be used to fabricate an array of nano-scale-width curved wires.
摘要翻译： 本公开涉及一种用于制造和使用超晶格的系统和方法。 可以通过在脊上施加交替材料层然后去除一些交替层以暴露边缘来制造超晶格。 这些暴露的边缘可以具有几乎任意的长度和曲率。 这些边缘可用于制造纳米尺度曲线的阵列。
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