公开(公告)号：US5156710A

公开(公告)日：1992-10-20

申请号：US695850

申请日：1991-05-06

申请人： Pei C. Chen ,  Thomas E. Kindl ,  Paul G. Rickerl ,  Mark J. Schadt ,  John G. Stephanie

发明人： Pei C. Chen ,  Thomas E. Kindl ,  Paul G. Rickerl ,  Mark J. Schadt ,  John G. Stephanie

IPC分类号： B29C65/64 ,  B29K79/00 ,  B29L9/00 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08G73/10 ,  C08J5/12 ,  C08J5/18 ,  H05K1/03 ,  H05K1/05

CPC分类号： C08J5/125 ,  B32B15/08 ,  C08G73/1039 ,  C08G73/1057 ,  C08G73/106 ,  C08G73/1064 ,  C08G73/1067 ,  C08G73/1078 ,  H05K1/0346 ,  H05K1/056 ,  C08J2379/02 ,  H05K1/036 ,  H05K2201/0355 ,  Y10T428/31536 ,  Y10T428/31681 ,  Y10T428/31721

摘要： An improved method of laminating a metal foil or sheet to a polyimide material is provided. A solution of a precursor of an intractable (i.e. thermosetting) polyimide is applied to a substrate and the solvent is removed to form a dry tack-free film. Thereafter, a solution of a precursor of a thermoplastic polyimide is applied onto the first film of polyimide and the solvent is removed to form a dry tack-free second film. Both films are then cured concomitantly at a sufficiently rapid rate and low temperature to effect substantial imidization of the polyimide precursors of both films without substantial crosslinking or densification of the polyimides in either of the films. Thereafter, a metal sheet or foil is laminated onto the thermoplastic polyimide film according to the following process. The thermoplastic film is contacted with the sheet or foil of metal to be laminated thereto. A first pressure is applied to the metal sheet and the polyimide substrate composite, which pressure is sufficiently low to permit outgassing of any gases trapped or generated within the polyimides and the temperature is increased. The temperature is raised to a level to essentially complete imidization of the polyimides and also to expel any gases contained or generated by said polyimide films. Thereafter, the pressure is increased to a second level or value and the temperature is controlled to a value which temperature is above the T.sub.g of the thermoplastic film. This second pressure is sufficiently high to complete the lamination of the metal sheet or foil to the thermoplastic polyimide.

摘要翻译： 提供了一种将金属箔或片层压到聚酰亚胺材料上的改进方法。 将难溶物（即热固性）聚酰亚胺的前体溶液施加到基材上，并除去溶剂以形成无干粘性膜。 此后，将热塑性聚酰亚胺的前体溶液施加到第一聚酰亚胺薄膜上，除去溶剂以形成无干粘性的第二薄膜。 然后两个膜以足够快的速率和低温同时固化，以实现两种膜的聚酰亚胺前体的显着酰亚胺化，而不影响任何一种膜中聚酰亚胺的交联或致密化。 此后，根据以下方法将金属片或箔层压到热塑性聚酰亚胺膜上。 将热塑性膜与待层压的金属片或箔片接触。 对金属板和聚酰亚胺基板复合体施加第一压力，其压力足够低以允许在聚酰亚胺内捕获或产生的任何气体脱气，并且温度升高。 将温度升高到基本上完全聚酰亚胺的酰亚胺化水平，并且还排出由所述聚酰亚胺膜包含或产生的任何气体。 此后，将压力提高到第二水平或值，并将温度控制在该温度高于热塑性膜的Tg的值。 该第二压力足够高以完成金属片或箔与热塑性聚酰亚胺的层压。

公开(公告)号：US5306741A

公开(公告)日：1994-04-26

申请号：US902951

申请日：1992-06-23

申请人： Pei C. Chen ,  Thomas E. Kindl ,  Paul G. Rickerl ,  Mark J. Schadt ,  John G. Stephanie

发明人： Pei C. Chen ,  Thomas E. Kindl ,  Paul G. Rickerl ,  Mark J. Schadt ,  John G. Stephanie

IPC分类号： B29C65/64 ,  B29K79/00 ,  B29L9/00 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08G73/10 ,  C08J5/12 ,  C08J5/18 ,  H05K1/03 ,  H05K1/05 ,  C08J3/28 ,  C08C73/10

CPC分类号： C08J5/125 ,  B32B15/08 ,  C08G73/1039 ,  C08G73/1057 ,  C08G73/106 ,  C08G73/1064 ,  C08G73/1067 ,  C08G73/1078 ,  H05K1/0346 ,  H05K1/056 ,  C08J2379/02 ,  H05K1/036 ,  H05K2201/0355 ,  Y10T428/31536 ,  Y10T428/31681 ,  Y10T428/31721

摘要： An improved method of laminating a metal foil or sheet to a polyimide material is provided. A solution of a precursor of an intractable (i.e. thermosetting) polyimide is applied to a substrate and the solvent is removed to form a dry tack-free film. Thereafter, a solution of a precursor of a thermoplastic polyimide is applied onto the first film of polyimide and the solvent is removed to form a dry tack-free second film. Both films are then cured concomitantly at a sufficiently rapid rate and low temperature to effect substantial imidization of the polyimide precursors of both films without substantial crosslinking or densification of the polyimides in either of the films. Thereafter, a metal sheet or foil is laminated onto the thermoplastic polyimide film according to the following process. The thermoplastic film is contacted with the sheet or foil of metal to be laminated thereto. A first pressure is applied to the metal sheet and the polyimide substrate composite, which pressure is sufficiently low to permit outgassing of any gases trapped or generated within the polyimides and the temperature is increased. The temperature is raised to a level to essentially complete imidization of the polyimides and also to expel any gases contained or generated by said polyimide films. Thereafter, the pressure is increased to a second level or value and the temperature is controlled to a value which temperature is above the T.sub.g of the thermal plastic film. This second pressure is sufficiently high to complete the lamination of the metal sheet or foil to the thermoplastic polyimide.

摘要翻译： 提供了一种将金属箔或片层压到聚酰亚胺材料上的改进方法。 将难溶物（即热固性）聚酰亚胺的前体溶液施加到基材上，并除去溶剂以形成无干粘性膜。 此后，将热塑性聚酰亚胺的前体溶液施加到第一聚酰亚胺薄膜上，除去溶剂以形成无干粘性的第二薄膜。 然后两个膜以足够快的速率和低温同时固化，以实现两种膜的聚酰亚胺前体的显着酰亚胺化，而不影响任何一种膜中聚酰亚胺的交联或致密化。 此后，根据以下方法将金属片或箔层压到热塑性聚酰亚胺膜上。 将热塑性膜与待层压的金属片或箔片接触。 对金属板和聚酰亚胺基板复合体施加第一压力，其压力足够低以允许在聚酰亚胺内捕获或产生的任何气体脱气，并且温度升高。 将温度升高到基本上完全聚酰亚胺的酰亚胺化水平，并且还排出由所述聚酰亚胺膜包含或产生的任何气体。 此后，将压力提高到第二水平或值，并将温度控制在该温度高于热塑性膜的Tg的值。 该第二压力足够高以完成金属片或箔与热塑性聚酰亚胺的层压。

公开(公告)号：US5525369A

公开(公告)日：1996-06-11

申请号：US152512

申请日：1993-11-16

申请人： Kim J. Blackwell ,  Pei C. Chen ,  Stephen E. Deliman ,  Allan R. Knoll ,  George J. Matarese ,  Richard D. Weale

发明人： Kim J. Blackwell ,  Pei C. Chen ,  Stephen E. Deliman ,  Allan R. Knoll ,  George J. Matarese ,  Richard D. Weale

IPC分类号： C23C14/04 ,  C23C14/20 ,  C23C14/54 ,  H01L21/48 ,  H05K3/40 ,  B05D5/12 ,  B05D3/12

CPC分类号： H05K3/4076 ,  C23C14/046 ,  C23C14/20 ,  C23C14/541 ,  H01L21/486 ,  Y10S428/901 ,  Y10T428/24917

摘要： A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

摘要翻译： 公开了一种将诸如铬和铜的薄晶种层气相沉积到例如聚酰亚胺薄膜基板中的通孔侧壁上的方法。 该方法在制造诸如薄膜半导体芯片载体的装置中是有用的，其中安装在芯片载体的一个主表面上的半导体芯片电连接到接地平面和/或芯片的另一主表面上的电源导体 载体通过一个或多个金属化通孔。

公开(公告)号：US06532134B1

公开(公告)日：2003-03-11

申请号：US08686567

申请日：1996-07-26

申请人： Pei C. Chen ,  Grace Lim Gorman ,  Cherngye Hwang ,  Vedantham Raman ,  Randall George Simmons

发明人： Pei C. Chen ,  Grace Lim Gorman ,  Cherngye Hwang ,  Vedantham Raman ,  Randall George Simmons

IPC分类号： G11B560

CPC分类号： G11B5/3106 ,  G11B5/255 ,  G11B5/40 ,  G11B5/6082

摘要： A silicon coating on an air bearing surface for magnetic thin film heads. A thick silicon layer is provided to replace metallic layers such as TiW as an overcoat for thin film heads. The silicon layer will provide a durable head-disk interface and act as a reflective surface for fly height measurement. The silicon layer can be planarized with the pole tips to avoid any magnetic spacing loss. The thickness of the silicon coating is preferably between 125 and 6500 angstroms thick. The slider body may be fabricated from silicon such that the silicon coating is substantially identical to the silicon slider body, thereby preventing thermal mismatch therebetween. The silicon coating is preferably applied using a magnetron sputtering technique which provides a high rate of deposition of silicon to form a dense, low stress silicon layer.

摘要翻译： 用于磁性薄膜头的空气轴承表面上的硅涂层。 提供厚硅层以代替诸如TiW的金属层作为薄膜头的外涂层。 硅层将提供耐用的头盘接口，并作为飞高测量的反射表面。 硅层可以用极尖平面化，以避免任何磁间隙损失。 硅涂层的厚度优选为125至6500埃厚。 滑块体可以由硅制成，使得硅涂层基本上与硅滑块体相同，从而防止硅片之间的热失配。 硅涂层优选使用磁控溅射技术来施加，其提供硅的高沉积速率以形成致密的低应力硅层。

公开(公告)号：US5943187A

公开(公告)日：1999-08-24

申请号：US878976

申请日：1997-06-18

申请人： Pei C. Chen ,  Cherngye Hwang ,  Vedantham Raman ,  Jila Tabib

发明人： Pei C. Chen ,  Cherngye Hwang ,  Vedantham Raman ,  Jila Tabib

IPC分类号： G11B5/10 ,  G11B5/255 ,  G11B5/31 ,  G11B5/39 ,  G11B5/60 ,  G11B5/72 ,  G11B5/82 ,  G11B5/84

CPC分类号： G11B5/6005 ,  G11B5/10 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/3967 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408

摘要： A method is provided for applying an overcoat to a slider and sensitive elements of a magnetic head which has improved coverage, reduced spacing loss and improved corrosion resistance. After lapping, an overcoat material is sputter deposited on the air bearing surface (ABS) of the slider, followed by a step of sputter etching the overcoat. The sputter etching redeposits material from high points on the slider and fills in trenches formed during the lapping process. The redeposition of the overcoat from the high places to the low places of the slider decreases the overall thickness of the overcoat, thereby decreasing spacing loss. The filling of the trenches implements increased coverage which increases wear resistance of the slider and more adequately protects the sensitive elements of the magnetic head from corrosion. In a preferred embodiment, a portion of the overcoat is left on the high places to ensure that the sputter etching does not damage the sensitive elements of the magnetic head. If the overcoat is completely etched from the high places an optional second overcoat may be applied which is thinner than the first overcoat. This method may also be applied to other articles such as a magnetic disk.

摘要翻译： 提供了一种将外涂层施加到滑块和磁头的敏感元件的方法，其具有改进的覆盖范围，减小的间隔损耗和改善的耐腐蚀性。 研磨后，将外涂层材料溅射沉积在滑块的空气轴承表面（ABS）上，随后溅射蚀刻外涂层。 溅射蚀刻从滑块上的高点重新沉积材料，并填充研磨过程中形成的沟槽。 外涂层从滑块的高处重新沉积到滑块的低处降低了外涂层的总厚度，从而减小了间隔损耗。 沟槽的填充实现增加的覆盖，增加滑块的耐磨性，并更充分地保护磁头的敏感元件不被腐蚀。 在优选实施例中，外涂层的一部分留在高处，以确保溅射蚀刻不会损坏磁头的敏感元件。 如果外涂层从高处完全蚀刻，则可以施加比第一外涂层更薄的任选的第二外涂层。 该方法也可以应用于诸如磁盘的其它物品。

公开(公告)号：US6023840A

公开(公告)日：2000-02-15

申请号：US144000

申请日：1998-08-31

申请人： Pei C. Chen ,  Grace Lim Gorman ,  Cherngye Hwang ,  Vedantham Raman ,  Randall George Simmons

发明人： Pei C. Chen ,  Grace Lim Gorman ,  Cherngye Hwang ,  Vedantham Raman ,  Randall George Simmons

IPC分类号： G11B5/10 ,  G11B5/187 ,  G11B5/255 ,  G11B5/31 ,  G11B5/40 ,  G11B5/60 ,  G11B21/21 ,  G11B5/42

CPC分类号： G11B5/40 ,  G11B5/10 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/6005 ,  Y10T29/49041 ,  Y10T29/49044

摘要： A single layer wear coating is provided for a magnetic head assembly. The single layer is silicon or silicon-based material with a thickness in the range of 30-75 .ANG.. The single layer may be formed by a single step of deposition employing a DC magnetron. The single layer wear coating improves the wear performance of the magnetic head assembly and protects one or more sensitive elements of a magnetic head without significant reduction of spacing loss.

摘要翻译： 为磁头组件提供单层耐磨涂层。 单层是硅或硅基材料，其厚度在30-75范围内。 单层可以通过使用DC磁控管的单个沉积步骤形成。 单层耐磨涂层改善了磁头组件的磨损性能，并保护了磁头的一个或多个敏感元件，而不会明显地减小间隔损耗。

公开(公告)号：US5808832A

公开(公告)日：1998-09-15

申请号：US607892

申请日：1996-02-27

申请人： Pei C. Chen ,  Grace Lim Gorman ,  Cherngye Hwang ,  Vedantham Raman ,  Randall George Simmons

发明人： Pei C. Chen ,  Grace Lim Gorman ,  Cherngye Hwang ,  Vedantham Raman ,  Randall George Simmons

IPC分类号： G11B5/10 ,  G11B5/187 ,  G11B5/255 ,  G11B5/31 ,  G11B5/40 ,  G11B5/60 ,  G11B21/21

CPC分类号： G11B5/40 ,  G11B5/10 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/6005 ,  Y10T29/49041 ,  Y10T29/49044

摘要： A single layer wear coating is provided for a magnetic head assembly. The single layer is silicon or silicon-based material with a thickness in the range of 30-75 .ANG.. The single layer may be formed by a single step of deposition employing a DC magnetron. The single layer wear coating improves the wear performance of the magnetic head assembly and protects one or more sensitive elements of a magnetic head without significant reduction of spacing loss.

摘要翻译： 为磁头组件提供单层耐磨涂层。 单层是硅或硅基材料，其厚度在30-75范围内。 单层可以通过使用DC磁控管的单个沉积步骤形成。 单层耐磨涂层改善了磁头组件的磨损性能，并保护了磁头的一个或多个敏感元件，而不会明显地减小间隔损耗。

公开(公告)号：US5288541A

公开(公告)日：1994-02-22

申请号：US779411

申请日：1991-10-17

申请人： Kim J. Blackwell ,  Pei C. Chen ,  Stephen E. Deliman ,  Allan R. Knoll ,  George J. Matarese ,  Richard D. Weale

发明人： Kim J. Blackwell ,  Pei C. Chen ,  Stephen E. Deliman ,  Allan R. Knoll ,  George J. Matarese ,  Richard D. Weale

IPC分类号： C23C14/04 ,  C23C14/20 ,  C23C14/54 ,  H01L21/48 ,  H05K3/40 ,  B32B9/00

CPC分类号： H05K3/4076 ,  C23C14/046 ,  C23C14/20 ,  C23C14/541 ,  H01L21/486 ,  Y10S428/901 ,  Y10T428/24917

摘要： A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

摘要翻译： 公开了一种将诸如铬和铜的薄晶种层气相沉积到诸如聚酰亚胺的薄膜基底中的通孔侧壁上的方法。 该方法在制造诸如薄膜半导体芯片载体的装置中是有用的，其中安装在芯片载体的一个主表面上的半导体芯片电连接到接地平面和/或芯片的另一主表面上的电源导体 载体通过一个或多个金属化通孔。

公开(公告)号：US5128008A

公开(公告)日：1992-07-07

申请号：US682994

申请日：1991-04-10

申请人： Pei C. Chen ,  Richard D. Weale

发明人： Pei C. Chen ,  Richard D. Weale

IPC分类号： H01L23/12 ,  C23C14/02 ,  C23C14/16 ,  H01L21/48 ,  H01L23/14 ,  H05K1/05 ,  H05K3/00 ,  H05K3/38 ,  H05K3/44

CPC分类号： H01L23/142 ,  C23C14/021 ,  C23C14/16 ,  H01L21/4871 ,  H05K1/056 ,  H05K3/388 ,  H01L2924/0002 ,  H05K2201/0154 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2201/068 ,  H05K2203/0315 ,  H05K2203/1157 ,  H05K3/44

摘要： Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper surface core, e.g., a copper-Invar-copper core, with a polymeric dielectric film. The method includes removing copper oxide from the copper surface of the metallic core or layer. After this step an adhesion layer, such as a chromium layer, a nickel layer, or chromium and nickel or chromium and copper bilayers, is sputter deposited onto the copper surface of metallic core or layer. A polymeric dielectric film is then applied atop the metallic adhesion layer.

公开(公告)号：US6132813A

公开(公告)日：2000-10-17

申请号：US989051

申请日：1997-12-11

申请人： Pei C. Chen ,  Richard Hsiao ,  Son Van Nguyen ,  Andrew Chiuyan Ting

发明人： Pei C. Chen ,  Richard Hsiao ,  Son Van Nguyen ,  Andrew Chiuyan Ting

IPC分类号： B05D7/24 ,  G11B23/50 ,  B05D5/12

CPC分类号： B05D1/62 ,  G11B23/505 ,  G11B23/507

摘要： A method for modifying a substrate surface, including the step of applying a high density plasma to the substrate surface in the presence of a hydrofluorocarbon gas and a carrier gas to form an antiwetting layer on the substrate surface. Optionally, the method including a cleaning step of contacting the slider surface with a carrier gas for a period of time effective to clean the surface.

摘要翻译： 一种用于改变基板表面的方法，包括在存在氢氟烃气体和载气的情况下将高密度等离子体施加到基板表面的步骤，以在基板表面上形成反渗透层。 可选地，所述方法包括清洁步骤，使滑动器表面与载气接触一段时间以有效地清洁表面。