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616 条记录 (耗时 0.032 秒)

    Phase change memory cell
    1.
    发明授权
    Phase change memory cell 有权
    相变存储单元

    公开(公告)号：US09099644B2

    公开(公告)日：2015-08-04

    申请号：US13332480

    申请日：2011-12-21

    申请人： Peng Liu ,  Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Peng Liu ,  Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1226 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144

    摘要： A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell.

    摘要翻译： 相变存储单元包括第一电路和第二电路。 第一电路包括第一电极，碳纳​​米管层和串联电连接的第二电极。 第一电路适于将数据写入相变存储单元或复位相变存储单元。 第二电路包括第三电极，相变层和串联电连接的第四电极，至少部分相变层与碳纳米管层重叠。 第二电路适于从相变存储单元读取数据或者复位相变存储单元。

    Thermoacoustic device
    2.
    发明授权
    Thermoacoustic device 有权
    热声装置

    公开(公告)号：US08331586B2

    公开(公告)日：2012-12-11

    申请号：US12655375

    申请日：2009-12-30

    申请人： Kai-Li Jiang ,  Lin Xiao ,  Zhuo Chen ,  Chen Feng ,  Liang Liu ,  Peng Liu ,  Li Qian ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Lin Xiao ,  Zhuo Chen ,  Chen Feng ,  Liang Liu ,  Peng Liu ,  Li Qian ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H04R25/00

    CPC分类号： H04R23/002 ,  B82Y30/00

    摘要： A thermoacoustic device includes a substrate, at least one first electrode, at least one second electrode and a sound wave generator. The at least one first electrode and the at least one second electrode are disposed on the substrate. The sound wave generator is contacting with the at least one first electrode and the at least one second electrode. The sound wave generator is suspended on the substrate via the first electrode and the second electrode. The sound wave generator includes a carbon nanotube structure.

    摘要翻译： 热声装置包括衬底，至少一个第一电极，至少一个第二电极和声波发生器。 所述至少一个第一电极和所述至少一个第二电极设置在所述基板上。 声波发生器与至少一个第一电极和至少一个第二电极接触。 声波发生器经由第一电极和第二电极悬挂在基板上。 声波发生器包括碳纳米管结构。

    Thermoacoustic device
    3.
    发明申请
    Thermoacoustic device 有权
    热声装置

    公开(公告)号：US20100166231A1

    公开(公告)日：2010-07-01

    申请号：US12655375

    申请日：2009-12-30

    申请人： Kai-Li Jiang ,  Lin Xiao ,  Zhuo Chen ,  Chen Feng ,  Liang Liu ,  Peng Liu ,  Li Qian ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Lin Xiao ,  Zhuo Chen ,  Chen Feng ,  Liang Liu ,  Peng Liu ,  Li Qian ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H04R25/00

    CPC分类号： H04R23/002 ,  B82Y30/00

    摘要： A thermoacoustic device includes a substrate, at least one first electrode, at least one second electrode and a sound wave generator. The at least one first electrode and the at least one second electrode are disposed on the substrate. The sound wave generator is contacting with the at least one first electrode and the at least one second electrode. The sound wave generator is suspended on the substrate via the first electrode and the second electrode. The sound wave generator includes a carbon nanotube structure.

    摘要翻译： 热声装置包括衬底，至少一个第一电极，至少一个第二电极和声波发生器。 所述至少一个第一电极和所述至少一个第二电极设置在所述基板上。 声波发生器与至少一个第一电极和至少一个第二电极接触。 声波发生器经由第一电极和第二电极悬挂在基板上。 声波发生器包括碳纳米管结构。

    Method for making phase change memory
    4.
    发明授权
    Method for making phase change memory 有权
    相变存储器的方法

    公开(公告)号：US08621746B2

    公开(公告)日：2014-01-07

    申请号：US13332486

    申请日：2011-12-21

    申请人： Peng Liu ,  Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Peng Liu ,  Qun-Qing Li ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： H01R43/00

    CPC分类号： H01L45/06 ,  H01L45/126 ,  H01L45/144

    摘要： A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.

    摘要翻译： 提供了一种制造相变存储器的方法。 该方法包括以下步骤。 提供基板。 多个第一行电极引线和第二行电极引线位于基板上。 在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。 图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。 在每个碳纳米管单元的表面上施加相变层。 多个第一电极，多个第二电极，多个第一行电极引线和多个第二行电极引线位于基板上。

    Method for making composite material
    7.
    发明授权
    Method for making composite material 有权
    制作复合材料的方法

    公开(公告)号：US08298623B2

    公开(公告)日：2012-10-30

    申请号：US12592497

    申请日：2009-11-25

    申请人： Jia-Ping Wang ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Jia-Ping Wang ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： B05D3/04

    CPC分类号： B01J35/002 ,  B01J21/185 ,  B01J35/0013 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  Y10T428/25 ,  Y10T428/2927

    摘要： A method for fabricating a composite material includes providing a free-standing carbon nanotube structure having a plurality of carbon nanotubes, introducing at least two reacting materials into the carbon nanotube structure to form a reacting layer, activating the reacting materials to grow a plurality of nanoparticles, wherein the nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure.

    摘要翻译： 一种制备复合材料的方法包括提供具有多个碳纳米管的独立碳纳米管结构，将至少两个反应材料引入到碳纳米管结构中以形成反应层，活化反应材料以生长多个纳米颗粒 ，其中所述纳米颗粒彼此间隔开并涂覆在所述碳纳米管结构的每个碳纳米管的表面上。

    Method for making thin film transistor comprising flocculating of carbon nanotubes
    9.
    发明授权
    Method for making thin film transistor comprising flocculating of carbon nanotubes 有权
    制造薄膜晶体管的方法，其包括碳纳米管的絮凝

    公开(公告)号：US08053291B2

    公开(公告)日：2011-11-08

    申请号：US12384310

    申请日：2009-04-02

    申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y10S977/938

    摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.

    摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。 源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

    Thin film transistor
    10.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US07973305B2

    公开(公告)日：2011-07-05

    申请号：US12384299

    申请日：2009-04-02

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L29/06

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562

    摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions.

    摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导体层包括至少两个层叠的碳纳米管膜，并且每个碳纳米管膜包括主要沿相同方向定向的多个碳纳米管，并且至少两个相邻的碳纳米管膜中的碳纳米管沿着不同的方向排列。