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    Switch circuit and method of switching radio frequency signals
    3.
    发明授权
    Switch circuit and method of switching radio frequency signals 有权
    开关电路及射频信号切换方法

    公开(公告)号：US09225378B2

    公开(公告)日：2015-12-29

    申请号：US14062791

    申请日：2013-10-24

    申请人： PEREGRINE SEMICONDUCTOR CORPORATION

    发明人： Mark L. Burgener ,  James S. Cable

    IPC分类号： H04B1/28 ,  H01L29/76 ,  H04M1/00 ,  H04B1/40 ,  H01P1/15 ,  H03K17/06 ,  H03K17/10 ,  H03K17/693 ,  H03K19/0185 ,  H03K19/0944 ,  H03K17/08

    CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

    摘要： An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

    摘要翻译： 一种用于切换RF信号的RF开关电路和方法，其可以使用诸如硅的公共集成电路材料制造，特别是使用绝缘衬底技术。 RF开关包括切换和分流晶体管组，以将RF输入信号交替耦合到公共RF节点，每个RF节点由开关控制电压（SW）或其倒数（SW_）控制，开关控制电压（SW）近似对称关于地对称。 晶体管组各自包括以“堆叠”串联通道配置连接在一起的一个或多个绝缘栅FET晶体管，这增加了串联连接的晶体管两端的击穿电压并改善了RF开关压缩。 描述了完全集成的RF开关，其包括具有RF开关元件的控制逻辑和负电压发生器。 在一个实施例中，完全集成的RF开关包括振荡器，电荷泵，CMOS逻辑电路，电平移位和分压电路以及RF缓冲电路。

    Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink
    7.
    发明申请
    Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink 有权
    用于使用累积电荷槽改善MOSFET的线性度的方法和装置

    公开(公告)号：US20130293280A1

    公开(公告)日：2013-11-07

    申请号：US13850251

    申请日：2013-03-25

    申请人： PEREGRINE SEMICONDUCTOR CORPORATION

    发明人： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

    IPC分类号： H03K17/16

    CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

    摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

    摘要翻译： 公开了一种用于改善使用累积电荷吸收（ACS）的MOSFET器件的线性特性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个示例性实施例中，具有至少一个SOI MOSFET的电路被配置为在累积电荷状态下操作。 当FET在累积电荷状态下工作时，可操作地耦合到SOI MOSFET的主体的累积电荷吸收器消除，去除或以其他方式控制累积电荷，从而降低寄生偏离态源极至漏极间电容的非线性 的SOI MOSFET。 在利用改进的SOI MOSFET器件实现的RF开关电路中，当SOI MOSFET在累积电荷状态下工作时，通过去除或以其他方式控制累积电荷来减小谐波和互调失真。