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21 条记录 (耗时 0.021 秒)

    Process for growing a film epitaxially upon an oxide surface and structures formed with the process
    5.
    发明授权
    Process for growing a film epitaxially upon an oxide surface and structures formed with the process 失效
    在氧化物表面和由该方法形成的结构物上外延生长薄膜的方法

    公开(公告)号：US5450812A

    公开(公告)日：1995-09-19

    申请号：US163427

    申请日：1993-12-08

    申请人： Rodney A. McKee ,  Frederick J. Walker

    发明人： Rodney A. McKee ,  Frederick J. Walker

    IPC分类号： C30B23/08 ,  C30B23/02 ,  C30B29/16 ,  G02B6/13

    CPC分类号： G02B6/131 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22 ,  C30B29/32 ,  Y10S438/967

    摘要： A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

    摘要翻译： 其中由钙钛矿或尖晶石构成的膜在表面上，例如碱土金属氧化物表面外延地构成，涉及钙钛矿或尖晶石的交替组成金属氧化物平面的外延生长。 构建在表面上的第一层金属氧化物包括在钙钛矿或尖晶石的晶体结构中提供小阳离子的金属元素，并且在表面上构建的第二层金属氧化物包括提供大阳离子的金属元素 钙钛矿或尖晶石的晶体结构。 涉及薄膜堆积的层叠顺序减少了否则由第一原子层的界面静电导致的问题，并且这些氧化物可被稳定为单位单元厚度的相当薄膜或以高结晶质量生长至厚度为0.5 -0.7微米用于光学设备应用。

    Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
    6.
    发明授权
    Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process 失效
    将氧化物外延沉积到硅衬底上的方法和用该方法制备的结构

    公开(公告)号：US5225031A

    公开(公告)日：1993-07-06

    申请号：US683401

    申请日：1991-04-10

    申请人： Rodney A. McKee ,  Frederick J. Walker

    发明人： Rodney A. McKee ,  Frederick J. Walker

    IPC分类号： C30B23/02

    CPC分类号： C30B23/02 ,  C30B29/16 ,  C30B29/32

    摘要： A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

    摘要翻译： 包括硅衬底的工艺和结构利用超高真空和分子束外延（MBE）方法在衬底的表面上生长外延氧化膜。 当膜生长时，在硅界面处形成的化合物的晶格变得稳定，并且由具有氯化钠型晶格结构的氧化物构成的基底层在化合物上外延生长以覆盖基底表面。 然后可以在基底层上外延生长钙钛矿，以产生具有电子功能的具有本身具有技术上重要性质的钙钛矿的硅的产品。

    Derivatives of hydroxyprimidines as leukotriene synthesis inhibitors
    7.
    发明授权
    Derivatives of hydroxyprimidines as leukotriene synthesis inhibitors 失效
    羟脯氨酸衍生物作为白三烯合成抑制剂

    公开(公告)号：US4940712A

    公开(公告)日：1990-07-10

    申请号：US358032

    申请日：1989-05-26

    申请人： Frederick J. Walker ,  Lawrence S. Melvin

    发明人： Frederick J. Walker ,  Lawrence S. Melvin

    IPC分类号： C07D239/46 ,  C07D239/56 ,  C07D409/12

    CPC分类号： C07D239/47 ,  C07D239/56 ,  C07D409/12 ,  Y10S514/826 ,  Y10S514/863

    摘要： 2-Amino and 2-thio-4-substituted-5-(hydroxy or alkoxy)-pyrimidines, which may be 6-substituted, and derivatives thereof are disclosed. The compounds are inhibitors of leukotriene synthesis and are, therefore, useful for the treatment of pulmonary, inflammatory, dermatological, allergic and cardiovascular diseases. The compounds are also cytoprotective and therefore, useful in the treatment of peptic ulcers.

    摘要翻译： 公开了可以是6-取代的2-氨基和2-硫代-4-取代-5-（羟基或烷氧基） - 嘧啶，及其衍生物。 这些化合物是白三烯合成的抑制剂，因此可用于治疗肺，炎症，皮肤病，过敏性和心血管疾病。 这些化合物也是细胞保护性的，因此可用于治疗消化性溃疡。

    Fiber optic displacement transducer with dichroic target
    8.
    发明授权
    Fiber optic displacement transducer with dichroic target 失效
    具有二向色目标的光纤位移传感器

    公开(公告)号：US4798951A

    公开(公告)日：1989-01-17

    申请号：US132409

    申请日：1987-12-14

    申请人： Frederick J. Walker

    发明人： Frederick J. Walker

    IPC分类号： G01D5/26 ,  G01B11/00

    CPC分类号： G01D5/268

    摘要： A fiber optic displacement transducer is provided by a fiber optic reflective probe (2), and an axially moveable target (4) having a dichroic optical filter (16) with first and second reflection surfaces (20 and 24) axially spaced by a fixed distance t and reflecting different wavelength light.

    摘要翻译： 光纤位移传感器由光纤反射探针（2）和轴向可移动的靶（4）提供，其具有分色光学滤光器（16），其具有轴向间隔固定距离的第一和第二反射表面（20和24） 并反射不同波长的光。

    Geometric shape control of thin film ferroelectrics and resulting structures
    10.
    发明授权
    Geometric shape control of thin film ferroelectrics and resulting structures 失效
    薄膜铁电体和结构的几何形状控制

    公开(公告)号：US6080235A

    公开(公告)日：2000-06-27

    申请号：US868076

    申请日：1997-06-03

    申请人： Rodney A. McKee ,  Frederick J. Walker

    发明人： Rodney A. McKee ,  Frederick J. Walker

    IPC分类号： C30B33/04

    CPC分类号： C30B33/04

    摘要： A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

    摘要翻译： 单片晶体结构及其制造方法涉及硅等半导体基板，覆盖在基板表面上的铁电体膜，例如BaTiO 3，其中铁电薄膜的原子层直接覆盖在基板的表面上。 通过控制铁电薄膜的几何形状，无论是在薄膜堆积过程中，还是通过对邻近其边界的薄膜进行适当的处​​理，铁电薄膜内的平面内拉伸应变就可以达到允许的程度 该铁电体膜被平面外的极化，从而实现底层衬底材料的极化的面内切换。 本发明的方法包括以下步骤：通过例如从已经构建在基板上的铁电体膜去除材料来构造在半导体衬底顶部的铁电体膜的边界处的机械约束的不连续性 在台状几何形状的基板上形成铁电薄膜，或者通过离子束沉积技术在边界处引起不连续性。