摘要:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
摘要:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
摘要:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
摘要:
A light emitting diode is disclosed, together with associated wafer structures, and fabrication and mapping techniques. The diode includes an active portion, a raised border on the top surface of the active portion and around the perimeter of the top surface of the active portion, a resin in the space defined by the border and the top surface of the active portion, and phosphor particles in the resin that convert the frequencies emitted by the active portion.
摘要:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
摘要:
A light emitting diode is disclosed, together with associated wafer structures, and fabrication and mapping techniques. The diode includes an active portion, a raised border on the top surface of the active portion and around the perimeter of the top surface of the active portion, a resin in the space defined by the border and the top surface of the active portion, and phosphor particles in the resin that convert the frequencies emitted by the active portion.
摘要:
A preform is attached to a solid state light emitting die. One or more optical elements, such as a photoluminescent element, a refracting element, a filtering element, a scattering element, a diffusing element or a reflecting element, is included in and/or on the preform. For example, the preform may be a glass preform with phosphor particles suspended therein. The preform may be fabricated using microelectronic manufacturing techniques, and may be placed on the solid state light emitting die using pick and place techniques.
摘要:
A solid state lighting apparatus includes a plurality of light emitting diodes (LEDs) including at least a first LED and a second LED. Chromaticities of the first and second LEDs are selected so that a combined light generated by a mixture of light from the pair of LEDs has about a target chromaticity. The first LED may include a first LED chip that emits light in the blue portion of the visible spectrum and a phosphor that emits red light in response to blue light emitted by the first LED chip. The second LED emits light having a color point that is above the planckian locus of a 1931 CIE Chromaticity diagram, and in particular may have a yellow green, greenish yellow or green hue.
摘要:
A luminescent particle includes a luminescent compound that is configured to perform a photon down conversion on a portion of received light and a reflectance reducing outer surface of the luminescent particle that is operable to increase the portion of received light that is absorbed in the luminescent particle.
摘要:
A luminescent cerium (Ce) doped compound emitting bright red light, comprising a calcium silicate nitride ternary system, such as CaSiN2-δOδ:Ce3+, that crystallizes in a face-centered cubic unit cell with a lattice parameter of ˜a=14.88 Å. The Ce doped compound can be used for white light applications either: (i) to enhance the light quality of the system based on a blue LED with a yellow or green phosphor, (ii) as an orange phosphor in combination with a blue LED and a green phosphor, or (iii) as a red phosphor in a setup comprising a ultraviolet (UV) LED and red, green and blue (RGB) phosphors. Substitution of smaller elements on the Ca site or larger elements on the Si site leads to a decrease of the emission wavelength towards the yellow or orange region.