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13 条记录 (耗时 0.024 秒)

    Process for selectively patterning epitaxial film growth on a semiconductor substrate
    1.
    发明授权
    Process for selectively patterning epitaxial film growth on a semiconductor substrate 失效
    用于在半导体衬底上选择性地构图外延膜生长的工艺

    公开(公告)号：US4614564A

    公开(公告)日：1986-09-30

    申请号：US678202

    申请日：1984-12-04

    申请人： Peter Sheldon ,  Russell E. Hayes

    发明人： Peter Sheldon ,  Russell E. Hayes

    IPC分类号： H01L21/033 ,  H01L21/20 ,  H01L21/205 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  C03B23/00 ,  H01L21/365

    CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0337 ,  Y10S438/933 ,  Y10S438/944

    摘要： A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

    摘要翻译： 公开了一种用于在半导体衬底上选择性地图案化外延膜生长的工艺。 该方法包括在基底的表面上形成掩模构件，掩蔽构件具有至少两层，包括设置在基底上的第一层和覆盖第一层的第二层。 然后通过去除该部分以露出其下面的第一层，在第二层的选定部分中打开窗口。 然后将第一层经历通过窗口引入的蚀刻剂以溶解足够量的第一层以在窗户下方露出基底表面，第一层适于以比第二层更大的速率优先溶解，因此 为了通过对其邻近窗口的边缘进行底切来形成具有第二层的悬垂凸缘部分。 然后将外延膜沉积在窗户正下方的暴露的基底表面上。 最后，通过窗口引入蚀刻剂以溶解第一层的其余部分，以便剥离第二层和沉积在其上的材料以完全暴露衬底表面的平衡。

    System for monitoring the growth of crystalline films on stationary substrates
    2.
    发明授权
    System for monitoring the growth of crystalline films on stationary substrates 失效
    用于监测固定基板上晶体膜生长的系统

    公开(公告)号：US5588995A

    公开(公告)日：1996-12-31

    申请号：US434181

    申请日：1995-05-03

    申请人： Peter Sheldon

    发明人： Peter Sheldon

    IPC分类号： C30B23/02 ,  C30B25/16

    CPC分类号： C30B23/02 ,  Y10T117/1004

    摘要： A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and convening the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.

    摘要翻译： 用于监测固定或旋转衬底上的结晶膜的生长的系统包括一些或所有元件的组合，包括用于检测入射光的强度并将其转换为可测量电流的光电二极管传感器，用于聚焦RHEED图案的透镜 从荧光屏发射到光电二极管上，用于滤除除了从荧光屏发出的光以外的光的干涉滤光器，用于放大并将由光电二极管产生的电流放大并转换成电压的电流放大器，用于接收放大的光电二极管的计算机 RHEED数据分析的电流，以及用于提高静态或旋转衬底采样时获得的信噪比的石墨浸渍三极管电缆。 用于支撑具有直径位置的电子束孔径和光学编码轴的衬底的旋转台也可用于在测量期间适应衬底的旋转。

    Data slicer for demodulated binary FSK signals in a time division duplex radio environment
    3.
    发明授权
    Data slicer for demodulated binary FSK signals in a time division duplex radio environment 失效
    用于时分双工无线电环境中解调的二进制FSK信号的数据限幅器

    公开(公告)号：US5933455A

    公开(公告)日：1999-08-03

    申请号：US864651

    申请日：1997-05-28

    申请人： Alan F. Hendrickson ,  Peter Sheldon

    发明人： Alan F. Hendrickson ,  Peter Sheldon

    IPC分类号： H04L25/06 ,  H04L27/14 ,  H04L23/02

    CPC分类号： H04L25/062 ,  H04L27/142

    摘要： Method and apparatus for providing a FSK data slicer for use in wireless telecommunications such as cordless telephones. The FSK data slicer is used by a receiver circuit in a wireless telecommunication device for converting an analog data signal to a digital data signal. Furthermore, the FSK data slicer responds to different mode of the analog data signal. The FSK data slicer includes a low-pass filter, a controller, a comparator, and an integrator. The low-pass filter receives the analog data signal for generating a median voltage, or slice voltage. Furthermore, the low-pass filter includes connectors to allow an external resistor to be serially connected between the filter input and the analog data signal and to allow an external capacitor to be connected in parallel with the slice voltage at the filter output. The bandwidth of the low-pass filter is controlled by the controller. The controller responds to specific intervals of the TDD frames, initial acquisition of data in the analog data signal, and known characteristics of the TDD frames and adjusts the low-pass filter bandwidth, accordingly. As a result, the low-pass filter drives the slice voltage only when it can do so accurately, and drives it strongly when the slice voltage will be very accurate. The comparator receives and compares the analog data signal and the slice voltage in order to produce a digital data signal. The digital data signal is then sent to the integrator, which over-samples each data bit of the digital data signal. The over-sampling is concentrated on the middle three quarters of each data bit, thereby ensuring the highest level of reliability.

    摘要翻译： 用于提供无线电话中使用的FSK数据限幅器的方法和装置，例如无绳电话。 FSK数据限幅器由无线电信设备中的接收机电路使用，用于将模拟数据信号转换为数字数据信号。 此外，FSK数据限幅器响应模拟数据信号的不同模式。 FSK数据限幅器包括一个低通滤波器，一个控制器，一个比较器和一个积分器。 低通滤波器接收用于产生中间电压或切片电压的模拟数据信号。 此外，低通滤波器包括连接器，以允许外部电阻器串联连接在滤波器输入端和模拟数据信号之间，并允许外部电容器与滤波器输出端的限幅电压并联连接。 低通滤波器的带宽由控制器控制。 控制器响应于TDD帧的特定间隔，模拟数据信号中数据的初始采集以及TDD帧的已知特性，并相应地调整低通滤波器带宽。 因此，低通滤波器只有在精确地进行切割电压时才能驱动分片电压，并且当切片电压非常精确时会驱动它。 比较器接收并比较模拟数据信号和限幅电压，以产生数字数据信号。 然后将数字数据信号发送到积分器，积分器对数字数据信号的每个数据位进行过采样。 过采样集中在每个数据位的中间四分之三，从而确保最高的可靠性。

    Variable temperature semiconductor film deposition
    4.
    发明授权
    Variable temperature semiconductor film deposition 失效
    可变温度半导体膜沉积

    公开(公告)号：US5712187A

    公开(公告)日：1998-01-27

    申请号：US555621

    申请日：1995-11-09

    申请人： Xiaonan Li ,  Peter Sheldon

    发明人： Xiaonan Li ,  Peter Sheldon

    IPC分类号： H01L21/203 ,  H01L21/363 ,  H01L31/073 ,  H01L31/18 ,  H01L21/20

    CPC分类号： H01L31/073 ,  H01L21/02474 ,  H01L21/02562 ,  H01L21/02595 ,  H01L21/02631 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

    摘要： A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

    摘要翻译： 一种在衬底上沉积半导体材料的方法。 该方法顺序地包括（a）提供诸如蒸气的沉积状态的半导体材料以沉积在基底上; （b）将半导体材料沉积在衬底上，同时将衬底加热到​​足以使半导体材料形成具有第一晶粒尺寸的第一膜层的第一温度; （c）在将衬底冷却至足以使半导体材料形成沉积在第一膜层上并具有小于第一晶粒尺寸的第二晶粒尺寸的第二膜层的第二温度下，将半导体材料连续沉积在衬底上; 和（d）提高衬底温度，同时继续或不继续沉积半导体材料以形成第三膜层，从而将膜层退火成在光伏应用中具有良好效率特性的单层。 优选的半导体材料是沉积在已经具有硫化镉层的玻璃/氧化锡衬底上的碲化镉。

    Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
    7.
    发明授权
    Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby 有权
    制造多晶半导体薄膜太阳能电池的方法以及由此制造的电池

    公开(公告)号：US6137048A

    公开(公告)日：2000-10-24

    申请号：US218206

    申请日：1998-12-22

    申请人： Xuanzhi Wu ,  Peter Sheldon

    发明人： Xuanzhi Wu ,  Peter Sheldon

    IPC分类号： H01L31/073 ,  H01L31/18 ,  H01L31/00

    CPC分类号： H01L31/073 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

    摘要翻译： 用于制造薄膜半导体异质结光伏器件的新颖简化方法包括以下步骤：通过在环境温度下的射频溅射，在透明衬底上沉积锡酸镉层和一层锡酸锌层，然后沉积 不同的半导体层如硫化镉和碲化镉，以及将锡酸镉转化为尖晶石晶体结构的基本单相材料的热处理。 优选地，硫化镉层也通过射频溅射在环境温度下沉积，并且碲化镉层通过在升高的温度下通过紧密空间升华沉积，以有效地将无定形镉锡酸盐转化为具有单相尖晶石结构的多晶锡酸锡 。

    System for monitoring the growth of crystalline films on stationary substrates
    8.
    发明授权
    System for monitoring the growth of crystalline films on stationary substrates 失效
    用于监测固定基板上晶体膜生长的系统。

    公开(公告)号：US5456205A

    公开(公告)日：1995-10-10

    申请号：US69405

    申请日：1993-06-01

    申请人： Peter Sheldon

    发明人： Peter Sheldon

    IPC分类号： C30B23/02 ,  C30B25/16

    CPC分类号： C30B23/02 ,  Y10T117/1004

    摘要： A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and converting the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.

    摘要翻译： 用于监测固定或旋转衬底上的结晶膜的生长的系统包括一些或所有元件的组合，包括用于检测入射光的强度并将其转换为可测量电流的光电二极管传感器，用于聚焦RHEED图案的透镜 从荧光屏发射到光电二极管上，用于滤除除荧光屏发出的光之外的光的干涉滤光器，用于将由光电二极管产生的电流放大和转换成电压的电流放大器，用于接收放大的光电二极管的计算机 RHEED数据分析的电流，以及用于提高静态或旋转衬底采样时获得的信噪比的石墨浸渍三极管电缆。 用于支撑具有直径位置的电子束孔径和光学编码轴的衬底的旋转台也可用于在测量期间适应衬底的旋转。

    Substrate structures for InP-based devices
    9.
    发明授权
    Substrate structures for InP-based devices 失效
    基于InP的设备的基板结构

    公开(公告)号：US4963949A

    公开(公告)日：1990-10-16

    申请号：US251484

    申请日：1988-09-30

    申请人： Mark W. Wanlass ,  Peter Sheldon

    发明人： Mark W. Wanlass ,  Peter Sheldon

    IPC分类号： H01L21/20 ,  H01L29/205 ,  H01L29/267

    CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02543 ,  H01L29/205 ,  Y10S438/936

    摘要： A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

    摘要翻译： 公开了一种具有InP基膜的InP基半导体器件的衬底结构。 衬底结构包括具有轻量体积衬底和上GaAs层的衬底区域。 互连区域设置在基板区域和基于InP的器件之间。 互连区域包括在一端基本上与GaAs层晶格匹配的组成分级的中间层，并且在与InP基膜相反的端部基本上晶格匹配。 互连区域还包括位移机构，其与渐变中间层协调配置在GaAs层和InP基膜之间，缓冲机构阻挡并抑制衬底区域和基于InP的器件之间的穿透位错的传播。