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公开(公告)号：US20180305813A1
公开(公告)日：2018-10-25
申请号：US16009799
申请日：2018-06-15
Applicant: Picosun Oy
Inventor： Sven Lindfors
IPC: C23C16/40 , C30B29/20 , C30B25/16 , C23C16/455
CPC classification number: C23C16/403 , C23C16/45504 , C23C16/45546 , C30B25/165 , C30B29/20
Abstract: The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.
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公开(公告)号：US20180099304A1
公开(公告)日：2018-04-12
申请号：US15840007
申请日：2017-12-13
Applicant: Picosun Oy
Inventor： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
CPC classification number: B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
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公开(公告)号：US20150322569A1
公开(公告)日：2015-11-12
申请号：US14794159
申请日：2015-07-08
Applicant: Picosun Oy
Inventor： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC: C23C16/455 , C23C16/52
CPC classification number: B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
Abstract translation: 本发明涉及包括操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底上的反应室中沉积材料，并且允许来自惰性气体源的气体流入扩展的自由基， 基本上在整个沉积循环期间向反应室开口的进料部分开口。 本发明还涉及相应的装置。
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公开(公告)号：US11326254B2
公开(公告)日：2022-05-10
申请号：US15123052
申请日：2014-03-03
Applicant: Picosun Oy
Inventor： Väino Sammelselg , Juhana Kostamo , Willi Bayerl , Jaan Aarik , Lauri Aarik , Sven Lindfors , Peter Adam , Juho Poutiainen
Abstract: An apparatus and method for protecting a gas container interior, where an inlet and exhaust manifold include a port assembly attachable to a port of the gas container is provided, the gas container interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the port into the gas container interior, and reaction residue is pumped via the port and the port assembly out from the gas container.
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Patent Agency Ranking
公开(公告)号：US10011904B2
公开(公告)日：2018-07-03
申请号：US13645712
申请日：2012-10-05
Applicant: Picosun Oy
Inventor： Sven Lindfors , Juha A. Kustaa-Adolf Poutiainen
IPC: B65H1/00 , C23C16/455 , C23C16/44 , H01L21/67 , H01L21/677
CPC classification number: C23C16/45546 , C23C16/4401 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67742 , H01L21/67757
Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.
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公开(公告)号：US09868131B2
公开(公告)日：2018-01-16
申请号：US14794159
申请日：2015-07-08
Applicant: Picosun Oy
Inventor： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
CPC classification number: B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
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公开(公告)号：US20130029042A1
公开(公告)日：2013-01-31
申请号：US13645712
申请日：2012-10-05
Applicant: Picosun Oy
Inventor： Sven Lindfors , Juha A. Kustaa-Adolf Poutiainen
IPC: C23C16/458
CPC classification number: C23C16/45546 , C23C16/4401 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67742 , H01L21/67757
Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.
Abstract translation: 本发明涉及其中多个ALD反应器相对于彼此以图案放置的方法和设备，每个ALD反应器被配置为接收一批用于ALD处理的基底，并且每个ALD反应器包括可从 顶端。 使用装载机器人执行多个加载顺序。 每个加载顺序包括拾取在存储区域或搁板中承载一批基板的基板保持器，以及将所述基板保持器与所述一批基板移动到所讨论的ALD反应器的反应室中。
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公开(公告)号：US08753716B2
公开(公告)日：2014-06-17
申请号：US13785071
申请日：2013-03-05
Applicant: Picosun Oy
Inventor： Pekka J. Soininen , Sven Lindfors
IPC: C23C16/455
CPC classification number: F16L53/00 , C23C16/4485 , C23C16/45544 , C23C16/45553 , C23C16/45561 , Y10T137/6416
Abstract: A method includes depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions, controlling feeding of precursor vapor from a precursor source to a reaction chamber including the reactor containing the substrate with a first pulsing valve embedded into the precursor source, and conveying inactive gas to a precursor cartridge attached to the precursor source to raise pressure of the precursor cartridge and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.
Abstract translation: 一种方法包括通过连续的自饱和表面反应在沉积反应器中将材料沉积在加热的衬底上，控制前体蒸气从前体源进料到反应室，反应室包括含有衬底的反应器，第一脉冲阀嵌入前体源 并且将惰性气体输送到附接到前体源的前体柱，以提高前体滤筒的压力并且容易地将前体蒸气和非活性气体的混合物随后流向反应室。
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公开(公告)号：US20130183444A1
公开(公告)日：2013-07-18
申请号：US13785071
申请日：2013-03-05
Applicant: Picosun Oy
Inventor： Pekka J. Soininen , Sven Lindfors
IPC: C23C16/455
CPC classification number: F16L53/00 , C23C16/4485 , C23C16/45544 , C23C16/45553 , C23C16/45561 , Y10T137/6416
Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.
Abstract translation: 一种诸如ALD（原子层沉积）装置的装置，包括被配置用于通过连续的自饱和表面反应在沉积反应器中在加热的衬底上沉积材料的前体源。 该装置包括用于将前体蒸气从前体源供给到反应室的进料管线和被配置为利用来自反应室加热器的热量以防止前体蒸气冷凝到前体源和反应器之间的液体或固相的结构 房间。 还提出了各种其他装置和方法。
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