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公开(公告)号：US20100072872A1
公开(公告)日：2010-03-25
申请号：US12447966
申请日：2007-12-10
申请人： Pierre Legagneux , Ludovic Hudanski , Jean-Philippe Schnell , Dominique Dieumegard , Pierrick Guiset , Alfredo De Rossi
发明人： Pierre Legagneux , Ludovic Hudanski , Jean-Philippe Schnell , Dominique Dieumegard , Pierrick Guiset , Alfredo De Rossi
IPC分类号： H01J31/00
CPC分类号： H01J23/04 , B82Y10/00 , H01J1/304 , H01J9/02 , H01J35/065 , H01J2201/30469
摘要： In an optically controlled cold-cathode electron tube, the emitters 1, of nanometer and/or micron size and of elongate shape, have a structure comprising a first material (4) of sp2-bonding carbon type and a metallic second material (3), said first material being in contact with and surrounding said second material at its top and over the entire length of the emitter or at least part of said length starting from its top toward the base (b). The second material has a plasma frequency substantially equal to or greater than the frequency of the optical control wave.
摘要翻译： 在光学控制的冷阴极电子管中，纳米和/或微米尺寸和细长形状的发射体1具有包括sp2结合碳型的第一材料（4）和金属第二材料（3）的结构， 所述第一材料在其顶部和整个发射器的整个长度上与所述第二材料接触并围绕所述第二材料，或者从其顶部朝向基底（b）开始的至少部分所述长度。 第二材料的等离子体频率基本上等于或大于光学控制波的频率。
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公开(公告)号：US08427039B2
公开(公告)日：2013-04-23
申请号：US12447966
申请日：2007-12-10
申请人： Pierre Legagneux , Ludovic Hudanski , Jean-Philippe Schnell , Dominique Dieumegard , Pierrick Guiset , Alfredo De Rossi
发明人： Pierre Legagneux , Ludovic Hudanski , Jean-Philippe Schnell , Dominique Dieumegard , Pierrick Guiset , Alfredo De Rossi
IPC分类号： H01J31/00
CPC分类号： H01J23/04 , B82Y10/00 , H01J1/304 , H01J9/02 , H01J35/065 , H01J2201/30469
摘要： In an optically controlled cold-cathode electron tube, the emitters 1, of nanometer and/or micron size and of elongate shape, have a structure comprising a first material (4) of sp2-bonding carbon type and a metallic second material (3), said first material being in contact with and surrounding said second material at its top and over the entire length of the emitter or at least part of said length starting from its top toward the base (b). The second material has a plasma frequency substantially equal to or greater than the frequency of the optical control wave.
摘要翻译： 在光学控制的冷阴极电子管中，纳米和/或微米尺寸和细长形状的发射体1具有包括sp2结合碳型的第一材料（4）和金属第二材料（3）的结构， 所述第一材料在其顶部和整个发射器的整个长度上与所述第二材料接触并围绕所述第二材料，或者从其顶部朝向基底（b）开始的至少部分所述长度。 第二材料的等离子体频率基本上等于或大于光学控制波的频率。
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公开(公告)号：US08035295B2
公开(公告)日：2011-10-11
申请号：US11721970
申请日：2005-12-12
申请人： Pierre Legagneux , Laurent Gangloff , Eric Minoux , Jean-Philippe Schnell , Frederic Andre , Dominique Dieumegard
发明人： Pierre Legagneux , Laurent Gangloff , Eric Minoux , Jean-Philippe Schnell , Frederic Andre , Dominique Dieumegard
CPC分类号： H01J1/304 , B82Y10/00 , H01J1/34 , H01J23/04 , H01J2201/304 , H01J2201/30469 , H01J2223/04
摘要： The invention relates to an optically-controlled field-emission cathode, comprising a substrate (10, 20, 30, 40, 50, 60, 70, 80, 90, 100) having at least one conducting surface (11, 21, 31, 41, 51, 61, 71, 81, 91, 101) and at least one conducting emitter element (16, 26, 36, 46, 56, 66, 76, 86, 96, 106) in the vicinity of a conducting surface, characterized in that it also comprises at least one photoconducting element (13, 23, 33, 43, 53, 63, 73, 83, 93, 103) electrically connected in series between at least one emitter element and a conducting surface of the substrate. Another subject of the invention is an amplifier tube comprising such a cathode. The application is for Vacuum tubes, in particular for microwave amplification, with a view for example to applications in telecommunications.
摘要翻译： 本发明涉及一种光学控制的场致发射阴极，其包括具有至少一个导电表面（11,21,31和31）的基底（10,20,30,40,50,60,70,80,90,100） 41，51，61，71，81，91，101）和在导电表面附近的至少一个导电发射极元件（16,26,36,46,56,66,76,86,96,106） 其特征在于，它还包括至少一个光电导元件（13,23,33,43,53,63,73,83,93,103），其电连接在至少一个发射极元件和基板的导电表面之间。 本发明的另一主题是包括这种阴极的放大器管。 该应用是用于真空管，特别是用于微波放大的，例如用于电信领域的应用。
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公开(公告)号：US20090261727A1
公开(公告)日：2009-10-22
申请号：US11721970
申请日：2005-12-12
申请人： Pierre Legagneux , Laurent Gangloff , Eric Minoux , Jean-Philippe Schnell , Frederic Andre , Dominique Dieumegard
发明人： Pierre Legagneux , Laurent Gangloff , Eric Minoux , Jean-Philippe Schnell , Frederic Andre , Dominique Dieumegard
IPC分类号： H01J40/00
CPC分类号： H01J1/304 , B82Y10/00 , H01J1/34 , H01J23/04 , H01J2201/304 , H01J2201/30469 , H01J2223/04
摘要： The invention relates to an optically-controlled field-emission cathode, comprising a substrate (10, 20, 30, 40, 50, 60, 70, 80, 90, 100) having at least one conducting surface (11, 21, 31, 41, 51, 61, 71, 81, 91, 101) and at least one conducting emitter element (16, 26, 36, 46, 56, 66, 76, 86, 96, 106) in the vicinity of a conducting surface, characterized in that it also comprises at least one photoconducting element (13, 23, 33, 43, 53, 63, 73, 83, 93, 103) electrically connected in series between at least one emitter element and a conducting surface of the substrate. Another subject of the invention is an amplifier tube comprising such a cathode. The application is for Vacuum tubes, in particular for microwave amplification, with a view for example to applications in telecommunications.
摘要翻译： 本发明涉及一种光学控制的场致发射阴极，其包括具有至少一个导电表面（11,21,31和31）的基底（10,20,30,40,50,60,70,80,90,100） 41，51，61，71，81，91，101）和在导电表面附近的至少一个导电发射极元件（16,26,36,46,56,66,76,86,96,106） 其特征在于，它还包括至少一个光电导元件（13,23,33,43,53,63,73,83,93,103），其电连接在至少一个发射极元件和基板的导电表面之间。 本发明的另一主题是包括这种阴极的放大器管。 该应用是用于真空管，特别是用于微波放大的，例如用于电信领域的应用。
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5.发明授权Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate 失效制造半导体器件的方法，该半导体器件包括沉积在绝缘衬底上的至少一个硅层
公开(公告)号：US4540452A
公开(公告)日：1985-09-10
申请号：US587641
申请日：1984-03-08
IPC分类号： H01L27/12 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/316 , H01L21/76
CPC分类号： H01L21/31654 , H01L21/26506 , Y10S148/003 , Y10S148/077 , Y10S148/117 , Y10S148/15 , Y10S438/967
摘要： The invention provides a process comprising a step for depositing at least one intrinsic or doped monocrystalline silicon layer on a substrate, also monocrystalline, followed by a step for forming a thin silica layer at the level of the original substrate-silicon interface. The silica layer is obtained by oxidation through the substrate, followed by a heat treatment step during which the monocrystalline silicon is oxidized by the implanted oxygen ions. The first approach may take place according to two variants: thermal or plasma oxidation of the silicon-substrate interface. Oxidation takes place during the return to ambient temperature of the stack of layers after the deposit has been made.
摘要翻译： 本发明提供了一种方法，其包括在衬底上沉积至少一个固有或掺杂的单晶硅层的步骤，也是单晶的，随后在原始衬底 - 硅界面的水平上形成薄的二氧化硅层的步骤。 二氧化硅层通过氧化通过基板获得，然后通过热处理步骤，其中单晶硅被注入的氧离子氧化。 第一种方法可以根据两种变体进行：硅衬底界面的热或等离子体氧化。 在沉积物制成之后，在叠层层的环境温度回升期间发生氧化。
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6.发明授权Process for hardening active electronic components against ionizing radiations, and hardened components of large dimensions 失效用于固化有源电子元件抵抗电离辐射的工艺，以及大尺寸的硬化部件
公开(公告)号：US5397735A
公开(公告)日：1995-03-14
申请号：US543796
申请日：1990-07-27
申请人： Louis Mercandalli , Didier Pribat , Bernard Dessertenne , Leonidas Karapiperis , Dominique Dieumegard
发明人： Louis Mercandalli , Didier Pribat , Bernard Dessertenne , Leonidas Karapiperis , Dominique Dieumegard
IPC分类号： H01L23/552 , H01L23/556 , H01L21/20
CPC分类号： H01L23/552 , H01L23/556 , H01L2924/0002 , Y10S438/953 , Y10S438/967
摘要： The invention relates to the "hardening" (resistance to ionizing radiations) of MOS-type components. In order to avoid the effects of these radiations (creation of electron-hole pairs), there is deposited on a substrate (1) of monocrystalline Si a layer of YSZ (2), and then a thin layer of monocrystalline Si (3). The other steps of production of the components are the same as conventional.
摘要翻译： PCT No.PCT / FR89 / 00598 Sec。 371日期1990年7月27日第 102（e）日1990年7月27日PCT 1989年11月21日提交。本发明涉及MOS型部件的“硬化”（电离辐射电阻）。 为了避免这些辐射（电子 - 空穴对的产生）的影响，沉积在单晶Si的一层YSZ（2）的衬底（1）上，然后沉积一层薄的单晶Si（3）。 组件的其他生产步骤与常规相同。
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7.发明授权
公开(公告)号：US5090932A
公开(公告)日：1992-02-25
申请号：US439372
申请日：1989-11-16
CPC分类号： H01J1/3042 , H01J9/025
摘要： Disclosed is a method for the fabrication of field emission peaks using a monocrystalline substrate with a suitable orientation coated with an insulating layer where square-shaped elementary zones with a suitable orientation with respect to the substrate have been removed. Silicon is deposited by selective epitaxy in these zones. The epitaxial growth of silicon, at high speed parallel to the substrate and at low speed along faces of the substrate at 45.degree. to the substrate, enables the making of pyramidal peaks which, afater being coated with tungsten, form emitting peaks.
摘要翻译： PCT No.PCT / FR89 / 00142 Sec。 371日期：一九八九年十一月十六日 102（e）日期1989年11月16日PCT 1989年3月24日PCT公布。 第WO89 / 09479号公报 日期为1989年10月5日。公开的是使用具有涂覆有绝缘层的合适取向的单晶衬底制造场致发射峰的方法，其中具有相对于衬底的合适取向的正方形基本区被去除。 在这些区域中通过选择性外延沉积硅。 硅衬底的高速平行于衬底并以45°的速度沿衬底的低速外延生长使得能够形成顶部被钨涂层的锥形峰形成发光峰。
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公开(公告)号：US06522080B1
公开(公告)日：2003-02-18
申请号：US09926008
申请日：2001-08-13
IPC分类号： G09G310
CPC分类号： H01J21/105 , H01J23/06
摘要： A microwave modulable field-effect cathode which includes at least one array of emissive tips. A microwave modulation signal is produced by a device including a microwave-controllable semiconductor modulation element which is close to the tip array, and a short microline for conveying the modulation signal to the tip array. The microline provides impedance matching between the tip array and the semiconductor modulation element. Such a device can find application as a compact field-effect cathode, as one example.
摘要翻译： 一种微波可调的场效应阴极，其包括至少一个发光尖端阵列。 微波调制信号由包括接近尖端阵列的微波可控半导体调制元件的装置和用于将调制信号传送到尖端阵列的短微线产生。 微线提供尖端阵列和半导体调制元件之间的阻抗匹配。 作为一个示例，这种装置可以发现作为紧凑型场效应阴极的应用。
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9.发明授权Device made of oxide superconductive material covered with ion conductive means for adjusting the doping level and T.sub.c thereof 失效氧化物超导材料的装置，其具有用于调节掺杂水平的离子传导装置和TC
公开(公告)号：US5053833A
公开(公告)日：1991-10-01
申请号：US657364
申请日：1991-02-19
CPC分类号： H01L39/2419 , H01L39/126 , H01L39/2454 , H01L39/2464 , Y10S505/816 , Y10T29/49982
摘要： Disclosed is a device made of superconductive material wherein the superconducting layer is enclosed by at least one material which is a conductor of ions of one of the anionic constituent elements of the superconductive layer. This makes it possible to adjust the stoichiometry of the superconductive layer. The disclosure also concerns a method for adjusting the content of the constituent elements of the superconductive layer by electrolysis.
摘要翻译： 公开了一种由超导材料制成的器件，其中超导层由至少一种材料包围，该材料是超导层的阴离子构成元件之一的离子的导体。 这使得可以调节超导层的化学计量。 本公开还涉及通过电解调节超导层的构成元素的含量的方法。
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