公开(公告)号：US09905414B2

公开(公告)日：2018-02-27

申请号：US15161903

申请日：2016-05-23

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Jill S. Becker ,  Dennis Hausmann ,  Seigi Suh

IPC分类号： C23C16/00 ,  C23C16/06 ,  H01L21/02 ,  C07F9/09 ,  C07F9/11 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/12 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C23C16/30 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L21/316

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.