公开(公告)号：US10395791B2

公开(公告)日：2019-08-27

申请号：US15755376

申请日：2016-08-26

申请人： President and Fellows of Harvard College ,  The Charles Stark Draper Laboratory, Inc.

发明人： Roy Gerald Gordon ,  Amy Elizabeth Duwel

IPC分类号： H01B1/02

摘要： A structure includes a high-strength nanowire core with a first electrically-conductive metal layer bonded to an outer surface thereof. An insulating layer is bonded to an outer surface of the first electrically-conductive metal layer, and a second electrically-conductive metal layer is bonded to an outer surface of the insulating layer. The nanowires are braided into a litz bundle, which reduces electrical losses during transmission of high-frequency current.

公开(公告)号：US20140311574A1

公开(公告)日：2014-10-23

申请号：US14357065

申请日：2012-11-19

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon

IPC分类号： H01G9/20 ,  H01G9/00

CPC分类号： H01G9/2031 ,  C09B23/005 ,  C09B23/0058 ,  C09B57/008 ,  C09B69/008 ,  H01G9/0029 ,  H01G9/2036 ,  H01L51/0064 ,  Y02E10/542

摘要： The application is directed to improved dye-sensitized solar cells and methods for making the same. In accordance with certain embodiments, dye-sensitized anodes are exposed to a vapor including at least one chemical that reacts with the catalytically active material of the anode to deposit a silica layer only on regions that are not covered with the dyes. The resulting self-aligned silica layers provide increased efficiency for dye-sensitized solar cells by reducing the leakage current from the anode to the electrolyte.

摘要翻译： 本申请涉及改进的染料敏化太阳能电池及其制备方法。 根据某些实施方案，染料敏化阳极暴露于包含至少一种与阳极的催化活性材料反应的化学物质的蒸汽，仅在没有被染料覆盖的区域上沉积二氧化硅层。 所得到的自对准二氧化硅层通过减少从阳极到电解质的泄漏电流来提高染料敏化太阳能电池的效率。

公开(公告)号：US11319452B2

公开(公告)日：2022-05-03

申请号：US14895373

申请日：2014-06-06

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon

IPC分类号： C09D7/00 ,  C09D7/63 ,  C23C16/18 ,  C23C16/34 ,  C07F5/00 ,  C07F13/00 ,  C07F15/00 ,  C07F1/00 ,  C07F15/04 ,  C07F19/00 ,  C07F15/06 ,  C07F7/22 ,  C08K5/56 ,  C23C16/448

摘要： This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.

公开(公告)号：US11161857B2

公开(公告)日：2021-11-02

申请号：US15937507

申请日：2018-03-27

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Eugene Beh ,  Liuchuan Tong

IPC分类号： A61K9/00 ,  C07F1/00 ,  C23C16/18 ,  C07F15/04 ,  C07F15/00 ,  C07F15/06 ,  C07F15/02 ,  C07F11/00 ,  C07F13/00 ,  C07F9/00 ,  C07F3/06 ,  C07F3/02 ,  C07F3/00 ,  C07F7/28 ,  C07F5/00 ,  H01L21/02 ,  C07F1/08 ,  C07F7/00 ,  G06N20/00 ,  G06F16/951 ,  C23C16/455

摘要： Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

公开(公告)号：US09905414B2

公开(公告)日：2018-02-27

申请号：US15161903

申请日：2016-05-23

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Jill S. Becker ,  Dennis Hausmann ,  Seigi Suh

IPC分类号： C23C16/00 ,  C23C16/06 ,  H01L21/02 ,  C07F9/09 ,  C07F9/11 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/12 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C23C16/30 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51 ,  H01L21/316

CPC分类号： H01L21/02148 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02159 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

公开(公告)号：US09663546B2

公开(公告)日：2017-05-30

申请号：US14906386

申请日：2014-07-25

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon

IPC分类号： C07F15/06 ,  C07F7/28 ,  C07F11/00 ,  C07F13/00 ,  C07D207/46 ,  C07D211/92 ,  C07F15/02 ,  C07F15/04 ,  H01L21/768

CPC分类号： C07F15/065 ,  C07D207/46 ,  C07D211/92 ,  C07F7/28 ,  C07F11/005 ,  C07F13/005 ,  C07F15/025 ,  C07F15/045 ,  H01L21/7685

摘要： Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.

公开(公告)号：US09390971B2

公开(公告)日：2016-07-12

申请号：US14793872

申请日：2015-07-08

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

IPC分类号： H01L21/768 ,  C23C16/06 ,  H01L21/285 ,  H01L21/288 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  H01L23/532

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

公开(公告)号：US09112005B2

公开(公告)日：2015-08-18

申请号：US13962856

申请日：2013-08-08

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

IPC分类号： C23C16/14 ,  H01L21/768 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  H01L21/285 ,  H01L23/532

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

摘要翻译： 提供了一种用于集成电路中铜线集成电路的互连结构及其制造方法。 含有Mn，Cr或V的层形成了阻碍铜从电线中扩散的阻挡层，从而保护绝缘体免于过早击穿，并保护晶体管免受铜的退化。 含Mn，Cr或V的层还促进了铜和绝缘体之间的强粘附，从而在制造和使用过程中保持了器件的机械完整性，并且在使用器件期间防止铜的电迁移失效，并保护 铜从其周围的氧气或水中腐蚀。 在形成这样的集成电路中，本发明的某些实施例提供了在铜表面上选择性地沉积Mn，Cr，V或Co的方法，同时减少或甚至防止在绝缘体表面上沉积Mn，Cr，V或Co。 还提供了使用含有Mn，Cr或V的前体和含碘或溴的前体的铜的催化沉积。