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    SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS
    2.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS 审中-公开

    公开(公告)号：US20150021548A1

    公开(公告)日：2015-01-22

    申请号：US14451125

    申请日：2014-08-04

    Applicant: QD Vision, Inc.

    Inventor： WENHAO LIU ,  CRAIG BREEN ,  SETH COE-SULLIVAN

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/28

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  C09D11/52 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/0029 ,  H01L33/28 ,  H01L33/502 ,  Y10S977/774

    Abstract: A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90° C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25° C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300° C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed.

    SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
    5.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME 有权

    公开(公告)号：US20140312300A1

    公开(公告)日：2014-10-23

    申请号：US14246275

    申请日：2014-04-07

    Applicant: QD VISION, INC.

    Inventor： DORAI RAMPRASAD ,  CRAIG BREEN ,  JONATHAN S. STECKEL

    IPC: H01L33/28 ,  H01L33/06

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/225 ,  H01L33/0029 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/2991 ,  Y10T428/2993

    Abstract: A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

    SEMICONDUCTOR NANOCRYSTALS AND METHODS
    6.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND METHODS 审中-公开

    公开(公告)号：US20170186608A1

    公开(公告)日：2017-06-29

    申请号：US15400699

    申请日：2017-01-06

    Applicant: QD VISION, INC.

    Inventor： INJA SONG ,  CRAIG BREEN

    IPC: H01L21/02

    CPC classification number: H01L21/02601 ,  B01J13/22 ,  B82Y30/00 ,  H01L21/02518 ,  H01L21/02628

    Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.

    NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODUCTS
    7.
    发明申请
    NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODUCTS 有权
    纳米晶体包括IIIA类元素和一组VA元素，方法，组合物，器件和其他产品

    公开(公告)号：US20160068750A1

    公开(公告)日：2016-03-10

    申请号：US14853388

    申请日：2015-09-14

    Applicant: QD Vision, Inc.

    Inventor： CHRISTOPHER R. CLOUGH ,  CRAIG BREEN ,  JONATHAN S. STECKEL ,  EBENEZER SELWYN ARUN THAMBAN

    IPC: C09K11/88 ,  C09K11/02 ,  H01L33/06

    CPC classification number: C09K11/883 ,  B82Y30/00 ,  C01B25/085 ,  C01B25/087 ,  C01G28/00 ,  C01G30/00 ,  C01P2004/64 ,  C01P2006/40 ,  C09K11/02 ,  C09K11/025 ,  C09K11/70 ,  H01L33/06 ,  Y10T428/2991

    Abstract: A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed.

    Abstract translation: 包括半导体材料的纳米晶体，所述半导体材料包含元素周期表的IIIA族元素的一种或多种元素和元素周期表的第VA族元素的一种或多种元素，其中所述纳米晶体能够发射具有光致发光量子效率的光 激发时至少约30％。 还公开了纳米晶体，其包括芯，其包含包含元素周期表的IIIA族的一种或多种元素的第一半导体材料和元素周期表的VA族的一种或多种元素，以及至少一种 芯的部分，壳包括第二半导体材料，其中纳米晶体在激发时能够发射具有至少约30％的光致发光量子效率的光。 还公开了一种纳米晶体，其包含纳米晶核和包含设置在纳米晶核的至少一部分上的半导体材料的外壳，其中所述半导体材料包含至少三种化学元素，并且可通过以下方法获得： 半导体材料的一种化学元素从单独的源到纳米晶核，同时为半导体材料的其它化学元素添加量。 还公开了纳米晶体的群体，制备纳米晶体的方法，组合物和包括纳米晶体的器件。

    COMPOSITIONS, OPTICAL COMPONENT, SYSTEM INCLUDING AN OPTICAL COMPONENT, DEVICES, AND OTHER PRODUCTS
    8.
    发明申请
    COMPOSITIONS, OPTICAL COMPONENT, SYSTEM INCLUDING AN OPTICAL COMPONENT, DEVICES, AND OTHER PRODUCTS 有权
    组件，光学组件，包括光学组件，设备和其他产品的系统

    公开(公告)号：US20150285982A1

    公开(公告)日：2015-10-08

    申请号：US14270098

    申请日：2014-05-05

    Applicant: QD VISION, INC.

    Inventor： SETH COE-SULLIVAN ,  JOHN R. LINTON ,  CRAIG BREEN ,  JONATHAN S. STECKEL ,  MARK COMERFORD

    IPC: F21V8/00

    CPC classification number: G02B6/0026 ,  B82Y20/00 ,  G02B6/0043 ,  G02B6/0065 ,  G09F13/22 ,  Y10S977/774

    Abstract: A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.

    Abstract translation: 公开了一种可用于改变可见光或不可见光的波长的组合物。 所述组合物包含固体主体材料和量子限制半导体纳米颗粒，其中所述纳米颗粒以所述主体材料的重量计约0.001至约15重量％的范围包含在所述组合物中。 组合物可以进一步包括散射体。 还公开了包括波导部件和量子限制半导体纳米颗粒的光学部件。 公开了一种包括光学部件的装置。 还公开了一种包括包括波导部件和量子限制半导体纳米颗粒的光学部件和光学耦合到波导部件的光源的系统。 还公开了贴花，试剂盒，油墨组合物和方法。 还公开了在其表面上包括量子限制半导体纳米颗粒的TFEL。

    BLUE EMITTING SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
    9.
    发明申请
    BLUE EMITTING SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME 有权
    蓝色发光半导体纳米晶体和组合物及其装置

    公开(公告)号：US20150184074A1

    公开(公告)日：2015-07-02

    申请号：US14563531

    申请日：2014-12-08

    Applicant: QD Vision, Inc.

    Inventor： CRAIG BREEN ,  JONATHAN S. STECKEL ,  DORAI RAMPRASAD

    IPC: C09K11/88 ,  C09K11/02 ,  C09K11/56

    CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/565 ,  C09K11/574 ,  H01L33/06 ,  Y10S428/917 ,  Y10T428/2991 ,  Y10T428/2993

    Abstract: A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.

    Abstract translation: 激发后能够发出蓝光的半导体纳米晶体。 还公开了半导体纳米晶体的器件，群体，以及包括在激发时能够发射蓝光的半导体纳米晶体的组合物。 在一个实施方案中，能够发射包括波长不大于约470nm的最大峰值发射的蓝光的半导体纳米晶体，其光致发光量子效率在激发时大于约65％。 在另一个实施例中，半导体纳米晶体包括芯，其包含包含至少三个化学元素的第一半导体材料和设置在芯的至少一部分上的壳，壳包括第二半导体材料，其中半导体纳米晶体能够发射 激发后光致发光量子效率大于约65％的蓝光。 在另一实施例中，半导体纳米晶体包括芯，其包括包含至少三个化学元件的第一半导体材料和设置在芯的至少一部分上的外壳，壳包括包含至少三个化学元素的第二半导体材料，其中 半导体纳米晶体在激发时能够发射包括光谱的蓝色区域中的最大峰值发射的光。

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