公开(公告)号：US20170373175A1

公开(公告)日：2017-12-28

申请号：US15192773

申请日：2016-06-24

Applicant: QUALCOMM Incorporated

Inventor： Shiqun GU ,  Gengming TAI ,  Je-Hsiung LAN ,  Matthew Michael NOWAK ,  Miguel MIRANDA CORBALAN ,  Steve FANELLI

IPC: H01L29/737 ,  H01L23/31 ,  H01L29/08 ,  H01L29/66

Abstract: Disclosed is a heterojunction bipolar transistor, and method of manufacturing the same, including an emitter having a conductive emitter contact coupled to a first side of the emitter, a first side of a base coupled to a second side of the emitter opposite the first side of the emitter, a collector coupled to the base on a second side of the base opposite the emitter, wherein an area of a junction between the base and the collector is less than or equal to an area of a junction between the base and the emitter, a first conductive base contact coupled to the base, and a conductive collector contact coupled to the collector on the side of the collector opposite the emitter and substantially parallel to the first conductive base contact.

公开(公告)号：US20180076137A1

公开(公告)日：2018-03-15

申请号：US15807169

申请日：2017-11-08

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Plamen Vassilev KOLEV ,  Michael Andrew STUBER ,  Richard HAMMOND ,  Shiqun GU ,  Steve FANELLI

IPC: H01L23/528 ,  H04B1/16 ,  H01L49/02 ,  H01L23/532 ,  H01L23/522 ,  H01L29/06 ,  H01L27/12 ,  H01L23/66

CPC classification number: H01L23/5283 ,  H01L23/5223 ,  H01L23/53209 ,  H01L23/66 ,  H01L27/1203 ,  H01L28/40 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/94 ,  H01L2223/6677 ,  H04B1/16

Abstract: An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

公开(公告)号：US20170201291A1

公开(公告)日：2017-07-13

申请号：US15151285

申请日：2016-05-10

Applicant: QUALCOMM INCORPORATED

Inventor： Shiqun GU ,  Chengjie ZUO ,  Steve FANELLI ,  Thomas GEE ,  Young Kyu SONG

IPC: H04B1/48 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06 ,  H01L21/762 ,  H01L23/60 ,  H01L49/02 ,  H01L21/84 ,  H01L21/768 ,  H01L27/12 ,  H01L23/66

CPC classification number: H04B1/48 ,  H01L21/76251 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1203 ,  H01L28/00 ,  H01L28/10 ,  H01L28/60 ,  H01L29/0649 ,  H01L2223/6672 ,  H01L2223/6677

Abstract: An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.