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公开(公告)号:US3374406A
公开(公告)日:1968-03-19
申请号:US37145464
申请日:1964-06-01
Applicant: RCA CORP
Inventor: WALLMARK JOHN T
IPC: H01L29/10 , H01L29/423 , H01L29/51
CPC classification number: H01L29/42368 , H01L29/1041 , H01L29/51
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公开(公告)号:US2774908A
公开(公告)日:1956-12-18
申请号:US49794655
申请日:1955-03-30
Applicant: RCA CORP
Inventor: WALLMARK JOHN T
IPC: H04N9/24
CPC classification number: H04N9/24
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公开(公告)号:US3070711A
公开(公告)日:1962-12-25
申请号:US78089358
申请日:1958-12-16
Applicant: RCA CORP
Inventor: MARCUS SANFORD M , WALLMARK JOHN T
CPC classification number: G11C19/28 , H01L27/0817
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公开(公告)号:US3242389A
公开(公告)日:1966-03-22
申请号:US19937662
申请日:1962-06-01
Applicant: RCA CORP
Inventor: WALLMARK JOHN T
IPC: H01C7/10 , H01L21/00 , H01L21/288 , H01L21/60 , H01L23/488 , H01L27/00 , H01L29/00
CPC classification number: H01L27/00 , H01C7/10 , H01L21/00 , H01L21/2885 , H01L23/488 , H01L24/80 , H01L29/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01084 , H01L2924/014 , H01L2924/19043 , Y10S438/979
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5.Semiconductor device with surface electrode producing electrostatic field and circuits therefor 失效
Title translation: 具有产生静电场的表面电极的半导体器件及其电路公开(公告)号:US3097308A
公开(公告)日:1963-07-09
申请号:US79812959
申请日:1959-03-09
Applicant: RCA CORP
Inventor: WALLMARK JOHN T
IPC: H01L27/082 , H01L29/00 , H01L29/06 , H01L29/73 , H01L29/739 , H01L29/80
CPC classification number: H01L29/739 , H01L27/082 , H01L29/00 , H01L29/06 , H01L29/73 , H01L29/80
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公开(公告)号:US3005937A
公开(公告)日:1961-10-24
申请号:US75637858
申请日:1958-08-21
Applicant: RCA CORP
Inventor: WALLMARK JOHN T , HERBERT NELSON
IPC: H01L27/098
CPC classification number: H01L27/098 , Y10S148/085 , Y10T29/49069
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公开(公告)号:US2638541A
公开(公告)日:1953-05-12
申请号:US11439149
申请日:1949-09-07
Applicant: RCA CORP
Inventor: WALLMARK JOHN T
IPC: H03K29/00
CPC classification number: H03K29/00
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8.
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9.Shift-register utilizing unitary multielectrode semiconductor device 失效
Title translation: 移位寄存器利用单一多电极半导体器件公开(公告)号:US3038085A
公开(公告)日:1962-06-05
申请号:US72388258
申请日:1958-03-25
Applicant: RCA CORP
Inventor: WALLMARK JOHN T , HARWICK JOHNSON
IPC: G11C19/28
CPC classification number: G11C19/28
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公开(公告)号:US2875384A
公开(公告)日:1959-02-24
申请号:US62662356
申请日:1956-12-06
Applicant: RCA CORP
Inventor: WALLMARK JOHN T
IPC: C25D11/32 , H01L21/00 , H01L21/316 , H01L23/29 , H01L23/31
CPC classification number: H01L23/291 , C25D11/32 , H01L21/00 , H01L21/31654 , H01L21/31683 , H01L23/3135 , H01L23/3157 , H01L2924/0002 , H01L2924/00
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