公开(公告)号：US20180138325A1

公开(公告)日：2018-05-17

申请号：US15797230

申请日：2017-10-30

Applicant: Renesas Electronics Corporation

Inventor： Shinichi WATANUKI ,  Futoshi KOMATSU ,  Tomoo NAKAYAMA ,  Takashi OGURA ,  Teruhiro KUWAJIMA

IPC: H01L31/028 ,  H01L31/0232 ,  H01L31/02

CPC classification number: H01L31/028 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/105

Abstract: Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.

公开(公告)号：US20190198703A1

公开(公告)日：2019-06-27

申请号：US16188985

申请日：2018-11-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoo NAKAYAMA ,  Shinichi WATANUKI ,  Futoshi KOMATSU ,  Teruhiro KUWAJIMA ,  Takashi OGURA ,  Hiroyuki OKUAKI ,  Shigeaki SHIMIZU

IPC: H01L31/105 ,  H01L31/18 ,  G02B6/122 ,  G02B6/136

Abstract: In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NR1 is formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NR1 respectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BM1 is formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NR1 is not formed within the semiconductor layer NR1.

公开(公告)号：US20180083154A1

公开(公告)日：2018-03-22

申请号：US15703525

申请日：2017-09-13

Applicant: Renesas Electronics Corporation

Inventor： Teruhiro KUWAJIMA ,  Shinichi WATANUKI ,  Futoshi KOMATSU ,  Tomoo NAKAYAMA

IPC: H01L31/105 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.

公开(公告)号：US20230387219A1

公开(公告)日：2023-11-30

申请号：US18185079

申请日：2023-03-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Futoshi KOMATSU ,  Tomoo NAKAYAMA ,  Katsuhiro UCHIMURA ,  Hiroshi INAGAWA

IPC: H01L29/40 ,  H01L29/66 ,  H01L21/02 ,  H01L21/304 ,  H01L21/56 ,  H01L21/288

CPC classification number: H01L29/401 ,  H01L29/66348 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02359 ,  H01L21/304 ,  H01L21/56 ,  H01L21/288 ,  H01L29/4236

Abstract: A method of manufacturing a semiconductor device includes: forming a silicon oxide film covering each of a first main surface and a second main surface of a semiconductor substrate; forming a redistribution wiring on the first main surface side of the semiconductor substrate; and grinding the second main surface of the semiconductor substrate. This grinding step is performed in a state in which a thickness of the silicon oxide film positioned on the second main surface is equal to or larger than 10 nm and equal to or smaller than 30 nm.

公开(公告)号：US20190006535A1

公开(公告)日：2019-01-03

申请号：US15980661

申请日：2018-05-15

Applicant: Renesas Electronics Corporation

Inventor： Teruhiro KUWAJIMA ,  Shinichi WATANUKI ,  Futoshi KOMATSU ,  Tomoo NAKAYAMA

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/024 ,  H01L31/02 ,  H01L31/028 ,  G02B6/43 ,  G02F1/025

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film.