公开(公告)号：US07811411B2

公开(公告)日：2010-10-12

申请号：US11200431

申请日：2005-08-09

申请人： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh ,  Muhammad M. Rasheed

发明人： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh ,  Muhammad M. Rasheed

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32522 ,  H01J37/321

摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.

摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。 框架适于将RF线圈支撑在适当位置。 界面材料设置在框架和处理室的侧壁之间并与之热接触。 界面材料的导热率为4.0W / mK以上。

公开(公告)号：US08022377B2

公开(公告)日：2011-09-20

申请号：US12107281

申请日：2008-04-22

申请人： Dmitry Lubomirsky ,  Muhammad M. Rasheed ,  Ellie Y. Yieh

发明人： Dmitry Lubomirsky ,  Muhammad M. Rasheed ,  Ellie Y. Yieh

IPC分类号： G21G5/00

CPC分类号： H01L21/67115 ,  H01L21/3105 ,  H01S3/03 ,  H01S3/034 ,  H01S3/0385 ,  H01S3/225 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/245

摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.

摘要翻译： 提供了一种用于产生准分子辐射的装置。 该装置包括具有壳体壁的壳体。 电极配置在外壳内。 管状体在电极周围。 管状体包括外壁和内壁。 至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

公开(公告)号：US07183227B1

公开(公告)日：2007-02-27

申请号：US10884628

申请日：2004-07-01

申请人： Muhammad M. Rasheed ,  Steven H Kim

发明人： Muhammad M. Rasheed ,  Steven H Kim

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/311

CPC分类号： C23C16/4412 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

摘要： High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

摘要翻译： 在HDP-CVD工艺中使用高流量的低质量流动气体用于氧化硅膜的间隙填充。 为这种低质量流动气体提供大的压缩比的增强的涡轮分子泵允许在衬底处理室中保持相对较低水平的压力，从而提高间隙填充特性。

公开(公告)号：US20100252416A1

公开(公告)日：2010-10-07

申请号：US12723199

申请日：2010-03-12

申请人： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

发明人： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/342 ,  H01J37/3423

摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

摘要翻译： 公开了包括目标组件的目标组件和PVD室。 目标组件包括具有凹形目标的目标。 当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

公开(公告)号：US09222172B2

公开(公告)日：2015-12-29

申请号：US12195127

申请日：2008-08-20

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/45591 ,  C04B35/581 ,  C04B40/0092 ,  C23C16/4404 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556

摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

摘要翻译： 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。 在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

公开(公告)号：US09087679B2

公开(公告)日：2015-07-21

申请号：US13365876

申请日：2012-02-03

申请人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

发明人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01J37/32

CPC分类号： H01J37/34 ,  H01J37/32082 ,  H01J37/3441

摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

公开(公告)号：US20110209995A1

公开(公告)日：2011-09-01

申请号：US12823893

申请日：2010-06-25

申请人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

发明人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

IPC分类号： C23C14/34

CPC分类号： H01J37/3444 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3438

摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

摘要翻译： 提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。 该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机 旋转，以及连接到基座的可变电容器的输出。 可变电容器的期望状态与过程控制器中的过程配方相关联。 当执行处理配方时，将可变电容器置于所需状态。

公开(公告)号：US20110036709A1

公开(公告)日：2011-02-17

申请号：US12850312

申请日：2010-08-04

申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

IPC分类号： C23C14/34

CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

公开(公告)号：US07722737B2

公开(公告)日：2010-05-25

申请号：US11123453

申请日：2005-05-04

申请人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana E. Gujer, legal representative

发明人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

IPC分类号： H01L21/326 ,  C23C16/505

CPC分类号： C23C16/4558

摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

摘要翻译： 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

公开(公告)号：US20100048028A1

公开(公告)日：2010-02-25

申请号：US12195127

申请日：2008-08-20

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky

IPC分类号： C23C16/00 ,  B29C67/04 ,  H01L21/30

CPC分类号： C23C16/45591 ,  C04B35/581 ,  C04B40/0092 ,  C23C16/4404 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556

摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

摘要翻译： 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。 在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。